sot-223 body marking D K Q F
Abstract: No abstract text available
Text: MOTOROLA Order this document by PZTA92T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor P N P PZTA92T1 S iliC O n COLLECTOR2,4 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol
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PZTA92T1/D
PZTA92T1
OT-223
sot-223 body marking D K Q F
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SO T-223 PA C K A G E P N P SILICON HIGH VO LTAGE TRANSISTOR S U R F A C E MOUNT EMITTER 3 MAXIMUM RATINGS Sym bol Value
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BSP16T1
OT-223
T-223
318E-04,
O-261AA
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step motor em 483
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB36N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 32 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTB36N06V/D
MTB36N06V
step motor em 483
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB30P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount M TB30P06V Motorola Preferred Device TM OS POWER FET 30 AMPERES 60 VOLTS RDS on = 0.080 OHM
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TB30P06V/D
TB30P06V
MTB30P06V/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD10N10EL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD10N10EL TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM
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TD10N10EL/D
MTD10N10EL
MTD10N10EL/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB23P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB23P06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 23 AMPERES 60 VOLTS P-Channel Enhancement-Mode Silicon Gate
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TB23P06V/D
MTB23P06V
MTB23P06V/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD5N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD5N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 5.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD5N25E/D
TD5N25E
MTD5N25E/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB50N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB50N06VL TMOS V™ Power Field Effect Transistor D2PAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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MTB50N06VL/D
MTB50N06VL
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TB50n
Abstract: No abstract text available
Text: MOTOROLA Order this docum ent by M TB50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOSV™ Power Field Effect Transistor D2PAK for S urface Mount MTB50N06VL Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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TB50N06VL/D
MTB50N06VL/D
TB50n
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06VL TMOS V™ Power Field Effect Transistor D2PAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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MTB52N06VL/D
MTB52N06VL
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06vl
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB30N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB30N06VL TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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MTB30N06VL/D
TB30N06VL
06vl
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TB50N06V
Abstract: ot 112 TB50n
Text: MOTOROLA Order this document by MTB50N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM OSV™ M TB50N06V Motorola Preferred Device Pow er Field E ffect Transistor D2PAK for S u rface Mount N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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MTB50N06V/D
TB50N06V
TB50N06V
ot 112
TB50n
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CIL TRANSISTOR 188
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S V™ MTB52N06V Motorola PrtfsrrM l Dw tc* Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new technology designed to achieve an on-resistance
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MTB52N06V/D
MTB52N06V
CIL TRANSISTOR 188
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTV20N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV20N 50E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 20 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTV20N50E/D
TV20N
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TV6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV6N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TV6N100E/D
MTV6N100E/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TV10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV10N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 10 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TV10N100E/D
TV10N
MTV10N100E/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD15N06VL TMOS V™ Power Field Effect Transistor DPAK for S urface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.085 OHM N-Channel Enhancement-Mode Silicon Gate
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TD15N06VL/D
TD15N06VL
MTD15N06VL/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD3302/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD3302 WaveFET TuT Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 10m Q TM05 WaveFET™ devices are an advanced series of power MOSFETs which utilize M otorola’s
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MTD3302/D
MTD3302
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1P40E/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor DPAK for S urface Mount P-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n
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TD1P40E/D
MTD1P40E/D
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05n60
Abstract: G05N60D
Text: MOTOROLA O rder this docum ent by M M G 05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMG05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate
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05N60D/D
05n60
G05N60D
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supper mosfets
Abstract: k 351 transistor
Text: MOTOROLA Order this document by MTD20N03HDUD SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20N03HDL HDTMOS E-FET™ High Density Pow er FET DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand
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MTD20N03HDUD
2PHX43416
MTD20N03HDL/D
supper mosfets
k 351 transistor
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PDF
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transistor z3m
Abstract: Z3M IC z3m Transistor Z3M Y
Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM
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MTB75N03HDL/D
2PHX43416-0
transistor z3m
Z3M IC
z3m Transistor
Z3M Y
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20P03H DL HDTMOS E-FET™ High Density Pow er FET DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS on = 0.099 OHM
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MTD20P03HDL/D
2PHX43416-0
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB50P03HDL HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM
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TB50P03HDL/D
MTB50P03HDL
418B-03
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