TRANSISTOR MRF Search Results

TRANSISTOR MRF Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MRF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Motorola 680 Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	PDF	MRF9822T1/D MRF9822T1 MRF9822/D Motorola 680 Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead
Motorola transistor 358 Abstract: Case 449-02 Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	PDF	MRF9822T1/D MRF9822T1 MRF9822T1 MRF9822T1/D Motorola transistor 358 Case 449-02
MRF894 Abstract: No abstract text available Text: MRF894 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application.	Original	PDF	MRF894 MRF894 040x45°
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC Abstract: 2.4 ghz transmitter rf test Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR	Original	PDF	MRF16006 MRF16006 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test
MRF151G Abstract: mrf151g 300 1202 transistor Text: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS	Original	PDF	MRF151G MRF151G mrf151g 300 1202 transistor
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10250HS MRF6V10250HSR3
MRF141G Abstract: MRF141G data sheet push pull power amplifier MOSFET RF POWER Text: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS	Original	PDF	MRF141G MRF141G MRF141G data sheet push pull power amplifier MOSFET RF POWER
MRF182 Abstract: transistor MRF182 1202 transistor 3004 fet 945 TRANSISTOR Text: MRF182 RF POWER FET TRANSISTOR DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. PACKAGE STYLE .350 2L FLG FEATURES INCLUDE: • Bradband performance from HF to 1 GHz • Omnigold Metalization System	Original	PDF	MRF182 MRF182 transistor MRF182 1202 transistor 3004 fet 945 TRANSISTOR
MRF644 Abstract: No abstract text available Text: MRF644 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF644 is a gold metallized RF power transistor designed for 12.5 V Class-C applications in 450-513 MHz frequency range. PACKAGE STYLE .500 6L FLG A C FEATURES: E • Internal Input Matching Network	Original	PDF	MRF644 MRF644
MRF1001A Abstract: high frequency transistor Text: MRF1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C	Original	PDF	MRF1001A MRF1001A high frequency transistor
MRF141 Abstract: MOSFET RF POWER Text: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS	Original	PDF	MRF141 MRF141 112x45° MOSFET RF POWER
motorola sps transistor Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR	Original	PDF	MRF16030/D MRF16030 MRF16030 DEVICEMRF16030/D motorola sps transistor motorola 572 transistor Motorola 1600 395C-01 sps transistor
transistor 955 MOTOROLA Abstract: MRF16006 Text: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR	Original	PDF	MRF16006/D MRF16006 MRF16006 MRF16006/D* MRF16006/D transistor 955 MOTOROLA
ATC100B471JT200XT Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 25cale
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10010N MRF6V10010NR4
F35V Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V
transistor equivalent table c101 Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10010N MRF6V10010NR4 MRF6V10010N transistor equivalent table c101 KEMET C1206C104K5RACTR CRCW12063301FKEA A03TKlc C1206C104K5RACTR
MJE 340 transistor Abstract: 3140e Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and	Original	PDF	MRF1047T1/D MRF1047T1 MRF1047T1/D MJE 340 transistor 3140e
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and	Original	PDF	MRF1047T1/D MRF1047T1 MRF1047T1 200E MRF1047
MRF6V10010NR4 Abstract: AN1955 d2460 A03TK Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10010N MRF6V10010NR4 MRF6V10010NR4 AN1955 d2460 A03TK
MRF1057T1 Abstract: AN1675 RK73H2A MDC5001 MRF1027T1 MRF1047T1 2.5 ghz lna transistor motorola rf spice 0/MRF1057 Text: Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by Raul Pineiro INTRODUCTION This Application Note describes the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA	Original	PDF	AN1675/D AN1675 MRF1057T1 MRF1027T1 MRF1047T1 AN1675 RK73H2A MDC5001 2.5 ghz lna transistor motorola rf spice 0/MRF1057
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	OCR Scan	PDF	MRF9822T1/D MRF9822T1 MRF9822/D
CHN 645 Abstract: transistor chn 115 chn 726 MRF511 chn 706 CHN 612 CHN 851 chn 625 CHN 650 transistor chn 726 Text: MRF511 SILICON l ’h e R ,F L i n e HIGH FREQUENCY TRANSISTOR NPN S IL IC O N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed specifically for broadband applications requiring low distortion characteristics and noise figure. Specified for use in C A T V applications.	OCR Scan	PDF	MRF511 CHN 645 transistor chn 115 chn 726 MRF511 chn 706 CHN 612 CHN 851 chn 625 CHN 650 transistor chn 726

TRANSISTOR MRF Search Results

TRANSISTOR MRF Result Highlights (5)

TRANSISTOR MRF Datasheets Context Search

Motorola 680

Motorola transistor 358

MRF894

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

MRF151G

Untitled

MRF141G

MRF182

MRF644

MRF1001A

MRF141

motorola sps transistor

transistor 955 MOTOROLA

ATC100B471JT200XT

Untitled

Untitled

F35V

transistor equivalent table c101

MJE 340 transistor

200E

MRF6V10010NR4

MRF1057T1

Untitled

CHN 645