BJT characteristics
Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
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NE681
BJT characteristics
NE68135
NE AND micro-X
2SC4227
2SC5007
2SC5012
NE68100
NE68118
NE68119
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transistor "micro-x" "marking" 102
Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
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NE681
transistor "micro-x" "marking" 102
laser drive ic 3656
4558 L
IC 2030 PIN CONNECTIONS
LB 1639
mje 3009
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NE68135
Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o
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NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
NE68139-T1
NE68139R-T1
transistor npn d 2078
common emitter bjt
transistor bf 494
NE68133-T1B-A
mje 3009
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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bd132
Abstract: transistor ALG 20
Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter
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BD132
OT-32
BD131.
bbS3T31
0D34251
BD131
BD132
bb53T31
transistor ALG 20
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Untitled
Abstract: No abstract text available
Text: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.
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bb53T31
DD34bM3
BF550
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status Product specification date of issue March 1991 BUK627-500B PowerMOS transistor Fast recovery diode FET P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK627-500B
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BF550
Abstract: transistor marking code 325 0024-B
Text: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.
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24LMC]
BF550
OT-23
BF550
transistor marking code 325
0024-B
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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BUK581-100A
OT223
BUK581
-100A
OT223.
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buz357
Abstract: Transistor 5331 MC 140 transistor
Text: N AMER PHILIPS/DISCRETE DfaE D » PowerMOS transistor bb53^31 0 DIM fiM3 BUZ357^_ ^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ357^
T0218AA;
bbSBT31
BUZ357
T-39-13
buz357
Transistor 5331
MC 140 transistor
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2SK659
Abstract: TC-6071
Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #
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2SK659
2SK659Ã
2SK659
TC-6071
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2n5449
Abstract: 2N5450
Text: 2 N 5449 • 2 N 5450 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Besondere Merkmale: • Verlustleistung 360 m W Features: • Power dissipation 360 m W
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TAA320A
Abstract: TAA320 OM802
Text: S ig n e tic s Linear Integrated Circuits TAA320A M.O.S.T. Level Sensor G E N E R A L D E S C R IP T IO N T h e T A A 3 2 0 A is a silicon m on olithic integrated circuit, consisting of a p-channel enhancem ent type M O S transistor and an n-p-n transistor, in a T O -1 8 metai envelope. The
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TAA320A
TAA320
OM802
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BUZ357
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • b b S a ^ l 0014343 T B U Z 357 T~ ~ 3^ - 13- May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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LLS3T31
BUZ357
T-39-13
D014fl4c
BUZ357
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transistor tt 2222
Abstract: 4312 020 36640 BLX39 PHILIPS 4312 amplifier vhf linear pulse power amplifier ferroxcube wideband hf choke TT 2222 npn
Text: bSE » H 7110fl2fc> 00b34fl7 H31 « P H I N BLX39 PHILIPS IN TERNATIONAL _ H .F./V .H .F. POW ER T R A N S IS T O R N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h .f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is
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7110fl2fc>
00b34fl7
BLX39
110-j62
transistor tt 2222
4312 020 36640
BLX39
PHILIPS 4312 amplifier
vhf linear pulse power amplifier
ferroxcube wideband hf choke
TT 2222 npn
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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BUK455-60A/B
Abstract: BUK455-60A
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-60A/B
BUK455
T0220AB
CONFIGURATION1993
BUK455-60A/B
BUK455-60A
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transistor 1gs
Abstract: T0-220AB BUK455-60A
Text: Phittps Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-60A/B
BUK455
T0220AB
transistor 1gs
T0-220AB
BUK455-60A
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TRANSISTOR Y1D
Abstract: 2N3924 2n3924 equivalent
Text: MOTOROLA SC XSTRS/R b3b7554 00^403(3 3 •H0Tb MbE D F ^ MOTOROLA ■i SEM ICONDUCTOR i TECHNICAL DATA 3 3 -0 5 2N3924 The R F Lin e NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . optim ized A n n u la r tra n sisto r fo r larg e-sig n al pow eram p lifier and d riv e r ap p licatio n s to 300 MHz.
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b3b7554
2N3924
TRANSISTOR Y1D
2N3924
2n3924 equivalent
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2SC 968 NPN Transistor
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from
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2SC5007
2SC 968 NPN Transistor
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BUK581-100A
Abstract: DD3003
Text: tiTE D N AMER P H I L I P S / D I S C R E T E • b bS BT a i □03Dfl3tj 25 2 ■ APX Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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0030fl3t,
BUK58Ã
-100A
OT223
aD30a41
BUK581
OT223.
BUK581-100A
DD3003
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.
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BFP96
OT173X
BFQ32C.
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PA33
Abstract: No abstract text available
Text: NEC DESCRIPTION PNP SILICON TRANSISTOR AN1L3Z The A N1L3Z is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 52 MAX. (0204 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit. iC Ri = 4.7 k n
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