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    TRANSISTOR NA 44 Search Results

    TRANSISTOR NA 44 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NA 44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ., U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV38 VHP LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor primarily intended for use in linear VHF television


    Original     		PDF BLV38 120mA

    ADL5310

    Abstract: AD8304 AD8305 ADL5306 IRF110 ADL5310ACP
    Text: 120 dB Range 3 nA to 3 mA Dual Logarithmic Converter ADL5310 FUNCTIONAL BLOCK DIAGRAM FEATURES 665kΩ OUT1 The ADL5310 employs an optimized translinear structure that utilizes the accurate logarithmic relationship between a bipolar transistor’s base-emitter voltage and collector current, with


    Original     		PDF ADL5310 ADL5310 MO-220-VGGD-2 24-Lead CP-24) ADL5310ACP ADL5310ACP-R2 ADL5310ACP-REEL7 ADL5310-EVAL AD8304 AD8305 ADL5306 IRF110 ADL5310ACP

    TRANSISTOR R57

    Abstract: 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A
    Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 20 GHz ICBO PARAMETERS AND CONDITIONS TYP MAX 1000 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 1000 hFE DC Current1 Gain at VCE = 3 V, IC = 100 mA


    Original     		PDF NE664M04 2SC5754 TRANSISTOR R57 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A

    image processing free

    Abstract: No abstract text available
    Text: For Communications Equipment MN86074 Image Processing LSI Overview transistor FET An external resistor determines the follow-up range. M Di ain sc te on na tin nc ue e/ d The MN86074 boosts image quality by applying various image processing techniques to the analog signal from


    Original     		PDF MN86074 MN86074 64-gradation, image processing free

    MA10

    Abstract: MA11 MA12 MA13 MN86074 QFH084-P-1212 QFH084-P-1212A FSP 30
    Text: For Communications Equipment MN86074 Image Processing LSI Overview transistor FET M Di ain sc te on na tin nc ue e/ d The MN86074 boosts image quality by applying various image processing techniques to the analog signal from an image sensor. Features include correction of laser


    Original     		PDF MN86074 MN86074 64-gradation, MA10 MA11 MA12 MA13 QFH084-P-1212 QFH084-P-1212A FSP 30

    Untitled

    Abstract: No abstract text available
    Text: , U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain


    Original     		PDF BLV859 OT262B

    Untitled

    Abstract: No abstract text available
    Text: For Communications Equipment MN86074 Image Processing LSI Overview transistor FET An external resistor determines the follow-up range. M Di ain sc te on na tin nc ue e/ d The MN86074 boosts image quality by applying various image processing techniques to the analog signal from


    Original     		PDF MN86074 MN86074 64-gradation,

    GTL2002

    Abstract: GTL2010 GTL2000DL-T D3S46 AN10145 GTL2000DGG GTL2000 GTL2000DL GTL2002D GTL2002DP-T
    Text: GTL2000/GTL2002/ GTL2010 1 48 GREF SREF 2 47 DREF S1 3 46 D1 S2 4 45 D2 S3 5 44 D3 S4 6 43 D4 S5 7 42 D5 S6 8 41 D6 S7 9 40 D7 S8 10 39 D8 S9 11 38 D9 37 D10 S10 12 S11 13 S12 14 GTL2000 GND 36 D11 35 D12 D13 S13 15 34 S14 16 33 D14 S15 17 32 D15 S16 18 31


    Original     		PDF GTL2000/GTL2002/ GTL2010 GTL2000 GTL2002 GTL2002 GTL2010 GTL2000DL-T D3S46 AN10145 GTL2000DGG GTL2000 GTL2000DL GTL2002D GTL2002DP-T

    ic 805

    Abstract: V 904 RL 805 876A ISTS904 871A transistor 824A
    Text: Optical Switches, Single Transistor Output Shortform Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Optical Switches Optocouplers Catalogue Home Page


    Original     		PDF H21A1-A2 813S3 813S5 813S7 822A1-A2 H21A1 H21A2 ic 805 V 904 RL 805 876A ISTS904 871A transistor 824A

    te 804

    Abstract: No abstract text available
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Optical Switches Optocouplers Catalogue Home Page H21A1-A2 200 870A 871A 875A 876A 813S3 813S5 813S7 822A1-A2 100


    Original     		PDF H21A1-A2 813S3 813S5 813S7 822A1-A2 H21A1 H21A2 te 804

    H05 SOT23 5

    Abstract: A1557 TRANSISTOR SOT23, Vbe 8V ES SC74 P6.064 Package transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96
    Text: HFA3134, HFA3135 TM Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s


    Original     		PDF HFA3134, HFA3135 HFA3134 HFA3135 H05 SOT23 5 A1557 TRANSISTOR SOT23, Vbe 8V ES SC74 P6.064 Package transistor pnp 3015 HFA3134IH96 HFA3135IH96

    TRANSISTOR SOT23, Vbe 8V

    Abstract: TRANSISTOR 1P SOT23 NPN pnp MATCHED PAIRS PNP 5GHz transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96 H05 SOT23 5
    Text: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s


    Original     		PDF HFA3134, HFA3135 HFA3134 HFA3135 TRANSISTOR SOT23, Vbe 8V TRANSISTOR 1P SOT23 NPN pnp MATCHED PAIRS PNP 5GHz transistor pnp 3015 HFA3134IH96 HFA3135IH96 H05 SOT23 5

    4n25

    Abstract: 4N25 pin 4N25 isocom 4N28 4n26 4N25/4N26/
    Text: 4N25, 4N26, 4N27, 4N28: Optocouplers 6 Pin Transistor Base-Connected Datasheet Page 1 of 3 Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055


    Original     		PDF com/4N25 4n25 4N25 pin 4N25 isocom 4N28 4n26 4N25/4N26/

    4n25

    Abstract: 4n28 4N25 pin
    Text: 4N25, 4N26, 4N27, 4N28: Optocouplers 6 Pin Transistor Base-Connected Datasheet Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 4N25, 4N26, 4N27, 4N28


    Original     		PDF Su10V 100ohm /SHRUTI/iscl/4n25 4n25 4n28 4N25 pin

    TPC87

    Abstract: TK115* toko TK 19 436 TPC96
    Text: [¿¡TOKO TK115XX VOLTAGE REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Dropout Voltage ■ Pass Transistor Terminals Available ■ Very Low Standby Current ON, No Load ■ Very Low (<200 nA) Current in OFF Mode ■ Low Output Noise ■ Internal Thermal Shutdown


    OCR Scan     		PDF TK115XX TK115xx IC-106-TK115 TPC87 TK115* toko TK 19 436 TPC96

    K1153

    Abstract: No abstract text available
    Text: fSTOKO TK115XX VOLTAGE REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Dropout Voltage Pass Transistor Terminals Available Very Low Standby Current ON, No Load Very Low (<200 nA) Current in OFF Mode


    OCR Scan     		PDF TK115XX K1153

    BLV80-28

    Abstract: TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN
    Text: bSE T> 7 11 002 b GübETiö 734 M P H I N B L V 8 0 /2 8 PHILIPS INTERNA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused em itter ballasting resistors fo r an optim um temperature profile;


    OCR Scan     		PDF 711002b BLV80/28 OT-121 00b3D0L. BLV80-28 TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN

    NDS8410

    Abstract: No abstract text available
    Text: M ay 19 96 Na t i o n a l Semiconductor" N D S 8 41 0 Single N-Channel Enhancem ent M ode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS8410 0-020Q NDS8410

    transistor 2N 2222 h 331

    Abstract: transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4
    Text: I INCH-PQUKITT M IL-S-l9500/447A ER 10 J u n e 1991 ctiDrDcrntkir u * nu MIL-S-19500/447(ER) 19 February 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, MPN, SILICON, POWER, T V O r I ITL 9 1 I C Û O C , u1nA nM IT Va nA Mn uf\ ul An Un Ti Va Vi


    OCR Scan     		PDF MIL-S-19500/447A MIL-S-19500/447 2N5926, MIL-S-19500. 5961-A006) transistor 2N 2222 h 331 transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4

    NDB7060

    Abstract: NDP7060
    Text: Na t io n a l Semiconductor" June 1996 NDP7060/ NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p o w e r field effect tran sisto rs are produced using National's pro p rie ta ry, high cell density, DMOS technology.


    OCR Scan     		PDF NDP7060/ NDB7060 bSD1130 bSD113D NDP7060

    Untitled

    Abstract: No abstract text available
    Text: [¿TO K O TK115xx VOLTAGE REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Dropout Voltage Pass Transistor Terminals Available Very Low Standby Current ON, No Load Very Low (<100 nA) Current in OFF Mode


    OCR Scan     		PDF TK115xx TK115xxM TK115xx IC-106-TK115

    mje 3003

    Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
    Text: Philips Semiconductors b b 5 3 ci 3 1 N AMER DDE5 3 bb 003 ^lA PX P H ILIP S /D IS C R E TE Product specification b7 E NPN 5 GHz wideband transistor FEATURES • c BFT25A PINNING Low current consumption 100 nA - 1 mA • Low noise figure • Gold metallization ensures


    OCR Scan     		PDF bb53ci31 DDE53bb BFT25A BFT25A mje 3003 mje 1303 transistor Bf 444 369-42 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291

    transistor 2N4401

    Abstract: 2n4401 die
    Text: Die no. C-31 NPN medium power transistor Dimensions Units : mm These epitaxial planar NPN silicon transistors are gold doped. TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVceo = 40 V (min) at


    OCR Scan     		PDF 2N4401 PN2222A transistor 2N4401 2n4401 die

    TRANSISTOR a31

    Abstract: No abstract text available
    Text: PNP medium power transistor Die no. A-31 Dimensions Units : mm These epitaxial planar PNP silicon transistors are gold doped. Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCeo = 40 V (min) at 1.0 mA


    OCR Scan     		PDF PN2907A 2N4403 VCC-30V TRANSISTOR a31