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    TRANSISTOR NEC D 582 Search Results

    TRANSISTOR NEC D 582 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NEC D 582 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7106

    Abstract: tms 1601 UM1233 siemens dimmer solar photodiodes ZN414 40pd NCR5380-40 ic 6402 um12
    Text: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.


    Original     		PDF

    tms 1601

    Abstract: mte maxim um1233 Omron Cross Reference HONEYWELL MODULATOR MOTOR Allen Bradley SLC500 PLC siemens s5 100u plc manual FR-U1205 scr regulator emergency light RS7660
    Text: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.


    Original     		PDF

    NEC D 586

    Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NT 407 F power transistor NEC D 882 p 2SC4885 R13* MARKING TC236
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    transistor NEC D 587

    Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage


    Original     		PDF 2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC ncr » M 0 S FIELD EFFECT TRANSISTOR BUECTRON DEVICE 2 S K 1 582 N-CHANNEL MOS FET FOR SWITCHING The 2S K 1582, N-channe! vertical type MOS FET, is a switching P A C K A G E D IM E N S IO N S Unit : mm device which can be driven directly by the output of fCs having a 5 V


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    1115A

    Abstract: e 1115a
    Text: DATA SHEET NEC SILICON TRANSISTORS 2 S B 1 11 5 , 2 S B 1 11 5 A PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP T IO N 2 S B H 1 5 , 2 S B 1 1 1 5 A are designed fo r a udio frequency p ow er a m p lifie r and sw itching a p p lic a tio n , especially in H y b rid In te ­


    OCR Scan     		PDF 2SB1115, 2SB1115A 1115A e 1115a

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan     		PDF 2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


    OCR Scan     		PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568

    ZO 107 MA

    Abstract: 341S
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5009 2SC5009 ZO 107 MA 341S

    IC SEM 2105

    Abstract: 3771 nec
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5008 2SC5008 IC SEM 2105 3771 nec

    transistor 2sc 1586

    Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		PDF 2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    TRANSISTOR 2SC 2581

    Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    928 606 402 00

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5008 2SC5008 928 606 402 00

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC4570 2SC4570 SC-70) 4570-T PACK878

    NEC D 809 F

    Abstract: NEC D 809 71383B NEC D 809 k
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm


    OCR Scan     		PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k

    NE674

    Abstract: NE67483 NE67483B
    Text: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m


    OCR Scan     		PDF NE674 NE67400 NE67483B NE67483B] NE67400] NE674 NE67483

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    transistor NEC D 882 p circuit diagram

    Abstract: 24m15a 24m12a 24m10a 24m08a UT 161 NEC D 582 pc24m18 24M06AHF
    Text: DATA SHEET NEC BIPOLAR ANALOG INTEGRATED CIRCUI ¿¿PC24M00A Serie; THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION iiP C 2 4 M 0 0 A S e ries are low dro p o u t regulato rs w h ich have 500 m A c a p a b le for ou tp u t current. The se ICs are built-in th e saturation protection circuit of th e output transistor.


    OCR Scan     		PDF uPC24M00A IE1-1209 IE1-1207 IEI-1213 transistor NEC D 882 p circuit diagram 24m15a 24m12a 24m10a 24m08a UT 161 NEC D 582 pc24m18 24M06AHF