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    TRANSISTOR NOISE FIGURE MEASUREMENTS Search Results

    TRANSISTOR NOISE FIGURE MEASUREMENTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NOISE FIGURE MEASUREMENTS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor D 2394

    Abstract: No abstract text available
    Text: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT


    Original     		AT-41411 OT-143 5965-0276E 5989-2646EN transistor D 2394 PDF

    AT-41435G

    Abstract: at41435 AT41435G transistor 2499
    Text: Agilent AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz Description Agilent’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high


    Original     		AT-41435 5988-9279EN 5989-2647EN AT-41435G at41435 AT41435G transistor 2499 PDF

    Avantek amplifier

    Abstract: Avantek amt AVANTEK transistor nomograph Avantek diode limiter AMT 4052 AWS01 Avantek apg AVANTEK solid state 290K1
    Text: AVANTEK APPLICATION NOTES A Snbddiary at HewUtt-Packard AM PLIFIERS If excessive power is applied to a transistor amplifier, the first measureable affect is almost always an increase in noise figure. A somewhat higher power will further degrade noise figure and decrease the gain of the amplifier. If the input power


    OCR Scan     		1-800-AVANTEK Avantek amplifier Avantek amt AVANTEK transistor nomograph Avantek diode limiter AMT 4052 AWS01 Avantek apg AVANTEK solid state 290K1 PDF

    IC 8088

    Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
    Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well


    Original     		ML4T645-S-512 ML4T645 IC 8088 MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500 PDF

    agilent at41486

    Abstract: AT-41486-TR1G AT-41486 nfO32 AT41486-TR1
    Text: Agilent AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz Agilent’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The


    Original     		AT-41486 5968-2031E 5989-2648EN agilent at41486 AT-41486-TR1G nfO32 AT41486-TR1 PDF

    free transistor

    Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
    Text: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package


    Original     		BFR740L3RH free transistor uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100 PDF

    ATF-13336

    Abstract: No abstract text available
    Text: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise


    Original     		ATF-13336 ATF-13336 5965-8724E PDF

    8724e

    Abstract: ATF-13336-TR1 ATF13336-STR gaas fet micro-X Package ATF-13336 ATF-13336-STR P1 260 ATF
    Text: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise


    Original     		ATF-13336 ATF-13336 5965-8724E 8724e ATF-13336-TR1 ATF13336-STR gaas fet micro-X Package ATF-13336-STR P1 260 ATF PDF

    ATF-13736

    Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736
    Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective


    Original     		ATF-13736 ATF-13736 5965-8722E 5967-5771E DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736 PDF

    transistor L44

    Abstract: L44 TRANSISTOR MA4T645
    Text: Preliminary Specification M an A M P com pany High Reliability Semiconductor Silicon Bipolar Low Noise Transistor Features • • • • ML4T645-S-512 ODS 512 Outline fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified


    OCR Scan     		ML4T645-S-512 ML4T645 transistor L44 L44 TRANSISTOR MA4T645 PDF

    8724e

    Abstract: P 55 NFO ATF-13336 ATF-13336-STR ATF-13336-TR1 gaas fet micro-X Package
    Text: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise


    Original     		ATF-13336 ATF-13336 8724e P 55 NFO ATF-13336-STR ATF-13336-TR1 gaas fet micro-X Package PDF

    ATF-13736

    Abstract: ATF-13736-STR ATF-13736-TR1 gaas fet micro-X Package
    Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective


    Original     		ATF-13736 ATF-13736 ATF-13736-STR ATF-13736-TR1 gaas fet micro-X Package PDF

    Untitled

    Abstract: No abstract text available
    Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective


    Original     		ATF-13736 ATF-13736 5965-8722E 5967-5771E PDF

    BFP620 applications note

    Abstract: BFP540 AN057 BCR400R BCR400W BFP620 LQG10A MS10 MS11 MS12
    Text: Applications Note No. 060 Silicon Discretes A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Silicon-Germanium BFP620 Transistor • Gain = 14.7 dB • Very Low Noise Figure = 1.05 dB • High Input 3rd-Order Intercept Point = +10 dBm


    Original     		BFP620 BFP620 lowMay-2000 LQP10A LQG10A 05-Oct-2000 AN060 BFP620 applications note BFP540 AN057 BCR400R BCR400W MS10 MS11 MS12 PDF

    uln 2008

    Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
    Text: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications


    Original     		BFP740 uln 2008 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A PDF

    gaas fet micro-X Package

    Abstract: No abstract text available
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package Features Description • Low Noise Figure: 0.8 dB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    Original     		ATF-10236 ATF-10236 5965-8697E gaas fet micro-X Package PDF

    transistor L44

    Abstract: MA4T64535
    Text: Afa Preliminary Specification an A M P c o m p a n y High Reliability Semiconductor Silicon Bipolar Low Noise Transistor ML4T645-S-512 V1.00 ODS 512 Outline Features • • • • fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation


    OCR Scan     		ML4T645-S-512 ML4T645 transistor L44 MA4T64535 PDF

    uln 2008

    Abstract: 825000 BFP740F Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types
    Text: Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications


    Original     		BFP740F uln 2008 825000 Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types PDF

    SOT-143 MARKING 550

    Abstract: AT41411 AT-41411 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor
    Text: Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth


    Original     		AT-41411 OT-143 AT-41411 AT41411 RN/50 5965-8924E SOT-143 MARKING 550 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor PDF

    transistor C4

    Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
    Text: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;


    Original     		BFR740L3RH 11b/g BFP620 AN173) transistor C4 Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier PDF

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


    Original     		BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth


    Original     		AT-41411 5965-8924E 5989-0276EN PDF

    gaas fet micro-X Package

    Abstract: P 55 NFO amplifier TRANSISTOR 12 GHZ GHZ micro-X Package MICRO-X ATF-10236 ATF-10236-STR ATF-10236-TR1
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 Features Description • Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		ATF-10236 ATF-10236 gaas fet micro-X Package P 55 NFO amplifier TRANSISTOR 12 GHZ GHZ micro-X Package MICRO-X ATF-10236-STR ATF-10236-TR1 PDF

    AT-41410

    Abstract: 41410 bipolar transistor 6 GHz UHF transistor GHz AT41410 NF50 S21E
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth


    Original     		AT-41410 AT-41410 AT41410 RN/50 5965-8923E 41410 bipolar transistor 6 GHz UHF transistor GHz NF50 S21E PDF