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    TRANSISTOR NPN FOR 12 V Search Results

    TRANSISTOR NPN FOR 12 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN FOR 12 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VHB100-12

    Abstract: ASI10719
    Text: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band.


    Original     		PDF VHB100-12 VHB100-12 ASI10719

    BUV21

    Abstract: No abstract text available
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A


    Original     		PDF BUV21 r14525 BUV21/D BUV21

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A


    Original     		PDF BUV21

    HF100-12

    Abstract: ASI10599
    Text: HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HF100-12 is a 12.5 V ClassC epitaxial planar transistor designed primarily for HF communications. This device utilizes state of the art diffused Emitter Ballasting to achieve extreme


    Original     		PDF HF100-12 HF100-12 112x45° ASI10599

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar type 3 elements Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives For small motor drive circuits in general 12° 12 3 NPN Overall 0.8 1.5±0.1 1.5+0.2 –0.1 6.5±0.3


    Original     		PDF UNA0235

    BUV26

    Abstract: V50B
    Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS


    Original     		PDF BUV26 85LLC r14525 BUV26/D BUV26 V50B

    CASE 221A Style 1

    Abstract: BUV26
    Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS


    Original     		PDF BUV26 CASE 221A Style 1

    NEC 1357

    Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz


    Original     		PDF 2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN

    2SC5015

    Abstract: 2SC5015-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation


    Original     		PDF 2SC5015 2SC5015-T1 PU10403EJ01V0DS 2SC5015 2SC5015-T1

    2SC5786

    Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz


    Original     		PDF 2SC5786 S21e2 2SC5786-T1 2SC5786 2SC5786-T1 marking UE marking 654 3pin nec 1299 662

    transistor marking MH

    Abstract: transistor buv27 ic marking code pk transistor marking T2 buv27 Specific Device Code MH
    Text: BUV27 NPN Silicon Power Transistor Designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed http://onsemi.com POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS


    Original     		PDF BUV27 O-220AB transistor marking MH transistor buv27 ic marking code pk transistor marking T2 Specific Device Code MH

    transistor NEC B 617

    Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357


    Original     		PDF 2SC5336 2SC3357 2SC5336-T1 transistor NEC B 617 nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617

    20191 ic

    Abstract: No abstract text available
    Text: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.


    Original     		PDF 1-877-GOLDMOS 1301-PTB 20191 ic

    Q62702-C25

    Abstract: No abstract text available
    Text: NPN Silicon AF Switching Transistor BCX 12 For general AF applications ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary type: BCX 13 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BCX 12


    Original     		PDF Q62702-C25 Q62702-C25

    NPN planar RF transistor

    Abstract: No abstract text available
    Text: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    Original     		PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 NPN planar RF transistor

    BFP181TW

    Abstract: marking W18 BFP181TRW BFP181T w18 transistor
    Text: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    Original     		PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 marking W18 w18 transistor

    MM1505

    Abstract: No abstract text available
    Text: MM1505 silicon NPN SILICON SWITCHING TRANSISTOR . designed plications. primarily for high-speed, saturated NPN SILICON SWITCHING TRANSISTOR switching ap­ • High Speed Switching Times @ I q = 10 m Adc — ton < 12 ns (Max) toff < 12 ns (Max) « M A X IM U M R A T IN G S


    OCR Scan     		PDF MM1505 MM1505

    baw 92

    Abstract: MPS2369 PP116
    Text: MPS2369 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . . . designed for use ¡n high-speed, low-current switching applications. • Low O utp ut Capacity • Fast Switching Time @ lc = 10 mAdc t on =! 12 #is (Max) • High Current*Gain—Bandwidth Product


    OCR Scan     		PDF MPS2369 12/is baw 92 MPS2369 PP116

    NEC IC D 553 C

    Abstract: ic 723 cn NEC JAPAN 3504 transistor on 4409
    Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low current consumption and high gain Units : mm i S 2ie 12 = 12 dB T Y P . @ Vce = 2 V, lc = 7 mA, f = 2 G H z


    OCR Scan     		PDF 2SC5180 2SC5180-- 2SC5180-T2 NEC IC D 553 C ic 723 cn NEC JAPAN 3504 transistor on 4409

    2SD1047

    Abstract: 2SB817 2SD1047 transistor
    Text: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SD1047 2SD1047 transistor is designed for use in general purpose Power amplifier,application FEATURES: * Collector-Emitter Voltage VCEO= 140V Min * DC Current Gain hFE= 60-200@lc= 1.0A * Complement to 2SB817 12 AMPERE


    OCR Scan     		PDF 2SD1047 2SB817 2SB817 2SD1047 transistor

    BFT-12

    Abstract: Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390
    Text: BFT12 NPN Silicon planar RF transistor BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41 867 sim. T 0 -5 0 for universal application in amplifiers up into the GHz range, e.g. for broadband antenna amplifiers with a high output power and linearity and for


    OCR Scan     		PDF BFT12 T0-50) Q62702-F390 BFT-12 Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390

    2SC2558

    Abstract: 2SC2559 2SC2559K ne0800
    Text: CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES_ DESCRIPTION • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC's NE0800 series of NPN epitaxial UHF power transistors is designed for large volume mobile radio applications In the


    OCR Scan     		PDF NE0800-12 NE0800 NE0801 NE0804 NE0810 NE080190 NE080490 NE081090 02-j0 2SC2558 2SC2559 2SC2559K

    NT 407 F TRANSISTOR

    Abstract: nt 407 f TRANSISTOR 2FE MPS2714
    Text: M P S 2 7 1 4 SILICON NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . designed for use in low-level switching applications. • Low Output Capacitance C ob = 2.5 p F (Typ) @ V C B = 10 Vd c • Fast Switching Time @ I q * 30 m A d c ts * 12 ns (Typ)


    OCR Scan     		PDF MPS2714 NT 407 F TRANSISTOR nt 407 f TRANSISTOR 2FE MPS2714

    fujitsu transistor

    Abstract: 2SC2043 ICB01 27mhz transistor citizen mhz 2sc204 tranceiver 27Mhz
    Text: FU JITS U TRANSISTOR :.t£i 2SC2043 is an NPN epitaxial planar type silicon transistor and is designed for use in output stage of 27MHz-citizen band SSB tranceiver application. Ohls transistor has the following outstanding features. * Power Output 12 * Power Gain


    OCR Scan     		PDF 2SC2043 2SC2043 27MHz-citizen 27MHz fujitsu transistor ICB01 27mhz transistor citizen mhz 2sc204 tranceiver 27Mhz