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    TRANSISTOR OE 4K Search Results

    TRANSISTOR OE 4K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR OE 4K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A011 transistor

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-06037 Spec Title: CY7C138 4K X 8/9 DUAL-PORT STATIC RAM WITH SEM , INT, BUSY Sunset Owner: Adithi Perepu Replaced by: NONE CY7C138 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True dual-ported memory cells that enable simultaneous reads


    Original     		CY7C138 CY7C138 16-bit A011 transistor PDF

    CY7C

    Abstract: a7l transistor A011 transistor CY7C138 CY7C138-25JXC CY7C138-25JXI
    Text: CY7C138 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 4K x 8 organization CY7C138 ■ 0.65-micron complementary metal oxide semiconductor


    Original     		CY7C138 CY7C138) 65-micron CY7C a7l transistor A011 transistor CY7C138 CY7C138-25JXC CY7C138-25JXI PDF

    7133 A-1

    Abstract: 7130 AN-91 transistor mark l6 IDT7024 IDT7025 signal path designer
    Text: THE MOST COMMONLY ASKED QUESTIONS ABOUT DUAL PORTS APPLICATION NOTE AN-91 Integrated Device Technology, Inc. By Mark Baumann WHAT IS A DUAL PORT? A dual port RAM is exactly what it sounds like. It is a single static RAM array with separate address, data, and control


    Original     		AN-91 7133 A-1 7130 AN-91 transistor mark l6 IDT7024 IDT7025 signal path designer PDF

    HX6409

    Abstract: D1878
    Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    Original     		HX6409 HX6218 HX6136 1x106 1x1014 1x109 1x1011 HX6409 D1878 PDF

    HX6409

    Abstract: No abstract text available
    Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    Original     		HX6409 HX6218 HX6136 1x106 1x1014 1x109 1x1011 HX6409 PDF

    Z80A

    Abstract: Z80A CPU z80a-cpu sense amplifier bitline memory device Application Note 02 datasheet and application 7217 idt7134 MICROPROCESSOR 68000 2kx8 interfacing IDT7050
    Text: INTRODUCTION TO IDT's FourPort RAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CEMOS™ technology, new RAM architectures and additional features have become feasible. The end result is that


    Original     		AN-45 IDT7052 12-transistor IDT7050 Z80A Z80A CPU z80a-cpu sense amplifier bitline memory device Application Note 02 datasheet and application 7217 idt7134 MICROPROCESSOR 68000 2kx8 interfacing PDF

    Z80A

    Abstract: Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 IDT7052 IDT7054
    Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CMOS technology, new SRAM architectures and


    Original     		AN-45 IDT7052 IDT7054 12-transistor IDT7052/IDTative Z80A Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 PDF

    Z80A

    Abstract: Z80A-CPU Z80A CPU 16 bit processor schematic 2kx8 EPROM SRAM 6116 4Kx8 Dual-Port Static RAM datasheet and application 7217 MICROPROCESSOR 68000 AN-45
    Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed


    Original     		AN-45 IDT7052 IDT7054 12-transistor Z80A Z80A-CPU Z80A CPU 16 bit processor schematic 2kx8 EPROM SRAM 6116 4Kx8 Dual-Port Static RAM datasheet and application 7217 MICROPROCESSOR 68000 AN-45 PDF

    4Kx8 Dual-Port Static RAM

    Abstract: Z80A Z80A CPU z80a-cpu 128 byte dual port memory sense amplifier bitline memory device 16 bit processor schematic datasheet and application 7217 DSP CPU non-recursive filter decoder AN-45
    Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed


    Original     		AN-45 IDT7052 IDT7054 12-transistor T7054 4Kx8 Dual-Port Static RAM Z80A Z80A CPU z80a-cpu 128 byte dual port memory sense amplifier bitline memory device 16 bit processor schematic datasheet and application 7217 DSP CPU non-recursive filter decoder AN-45 PDF

    transistor A7

    Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
    Text: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being


    Original     		PDF

    ST2149QTR

    Abstract: ST2149 QFN16L ST2149Q
    Text: ST2149 4-bit dual supply level translator without direction control pin Features • 42 MHz: 84 Mbps max data rate at VL = 1.8 V, VCC = 3.3 V ■ Bidirectional level translation without direction control pin ■ Wide voltage range (VCC ≥ VL): – VL ranges from 1.65 to 3.6 V


    Original     		ST2149 QFN16 ST2149 ST2149QTR QFN16L ST2149Q PDF

    schematic inductive proximity sensor

    Abstract: wheatstone bridge connected to ad624 honeywell inductive detector hall sensor 4-pin cd rom driver honeywell v3 "inductive sensor" marking code GBK isolated voltage sensor 1mhz Magnetic stripe card encoders schematics HONEYWELL* gradiometer schematic inductive speed sensor
    Text: GMR Sensors Data Book April 2003 NVE Corporation 11409 Valley View Road, Eden Prairie, Minnesota, 55344 USA 800 467-7141 Web: www.nve.com Email: info@nve.com 04/28/03 Applications for NVE GMR Sensors • • • • • • • • • • • • • •


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and


    Original     		M10339EJ3V0UM00 PDF

    Untitled

    Abstract: No abstract text available
    Text: 12-Nov-13 Contact : Gonzalo Picún +32-10-489214 Nov. 13 CHT-MAGMA - DATASHEET (Last Modification Date) CHT-MAGMA DATASHEET Version: 1.7 12-Nov-13 (Last Modification Date) High Temperature PWM Controller General Description Features MAGMA is a High Temperature Pulse


    Original     		12-Nov-13 50KHz 500KHz. DS-100702 PDF

    H11AV1

    Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
    Text: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs


    OCR Scan     		b3b725S H11AV1 H11AV2 H11AV3 H11AV3A H11AV1A H11AV2A H11AV3A diode b3l PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS7C181026LL A 1.8V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits


    OCR Scan     		AS7C181026LL 44-pin 48-ball AS7C181026LL-55TI AS7C181026LL-70TI AS7C181026LL-100TI AS7C181026LL-55BC AS7C181026LL-70BC AS7C181026LL-100BC AS7C181026LL-55BI PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		HX6409 HX6218 HX6136 1x106rad 1x101 1x109 PDF

    Untitled

    Abstract: No abstract text available
    Text: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		HX6409 HX6218 HX6136 1x106rad 1x101 1x109 PDF

    holtek sound chip

    Abstract: No abstract text available
    Text: HOLTEK r r HT82013 ADPCM Synthesizer with External ROMs Features • • • • • • • • Operating voltage: 3.5V~5.0V Directly interface with external parallel ROMs Size of external parallel ROMs up to 8Mbx3 12-bit analysis and 3 bit ADPCM coding algorithm


    OCR Scan     		12-bit 1368-second 58MHz HT82013 HT82003 holtek sound chip PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times


    OCR Scan     		HX6409 HX6218 HX6136 1x10U 1x109 PDF

    transistor KSP 42

    Abstract: irf950 IRFP100 transistor KSP 56 transistor KSP 92 G 23 ksp 36 93 IRF9500 transistor KSP 13 Samsung "NAND Flash" "ordering information" IRFP p-channel
    Text: ORDERING INFORMATION KSV 3100A C N/ + BURN-IN OPTIONAL (SEE BURN-IN PROGRAM) PACKAGE TYPE (SEE EACH SPEC OF DEVICE) OPERATING TEMP IC’S ONLY BLANK: SEE INDIVIDUAL SPEC C : 0 - 70°C I : - 40 - 85°C M : - 5 5 - + 125°C DEVICE NUMBER AND SUFFIX (OPTIONAL)


    OCR Scan     		OT-23 O-220 100ns 120ns 150ns 200ns 16bit transistor KSP 42 irf950 IRFP100 transistor KSP 56 transistor KSP 92 G 23 ksp 36 93 IRF9500 transistor KSP 13 Samsung "NAND Flash" "ordering information" IRFP p-channel PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		HX6409 HX6218 HX6136 1x106 1x101 1x109 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		HX6409 HX6218 HX6136 1x106rad 1x101 1x109 PDF

    PJ 1169

    Abstract: No abstract text available
    Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.


    OCR Scan     		M10339EJ3V0UM00 PJ 1169 PDF