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    HX6409 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HX6409 Honeywell Fifo-soi Original PDF
    HX6409DBNT Honeywell FIFO-SOI Original PDF
    HX6409DEHT Honeywell FIFO-SOI Original PDF
    HX6409FBFC Honeywell FIFO-SOI Original PDF
    HX6409TBFC Honeywell FIFO-SOI Original PDF
    HX6409TBFT Honeywell FIFO-SOI Original PDF
    HX6409TBHC Honeywell FIFO-SOI Original PDF
    HX6409TBHT Honeywell FIFO-SOI Original PDF
    HX6409TBNC Honeywell FIFO-SOI Original PDF
    HX6409TBNT Honeywell FIFO-SOI Original PDF
    HX6409TBRC Honeywell FIFO-SOI Original PDF
    HX6409TBRT Honeywell FIFO-SOI Original PDF
    HX6409TENC Honeywell FIFO-SOI Original PDF
    HX6409TENT Honeywell FIFO-SOI Original PDF
    HX6409TSFC Honeywell FIFO-SOI Original PDF
    HX6409TSFT Honeywell FIFO-SOI Original PDF
    HX6409TSHC Honeywell FIFO-SOI Original PDF
    HX6409TSHT Honeywell FIFO-SOI Original PDF
    HX6409TSNC Honeywell FIFO-SOI Original PDF
    HX6409TSNT Honeywell FIFO-SOI Original PDF

    HX6409 Datasheets Context Search

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    x-ray cmos

    Abstract: HX6409 6409D 6218 FIFO 065um capacitor enw
    Text: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit


    Original     		PDF HX6409/HX6218/HX6136 HX6409, HX6218, HX6136 HX6409 4096-word HX6218 2048-word 18-bit x-ray cmos 6409D 6218 FIFO 065um capacitor enw

    065um

    Abstract: No abstract text available
    Text: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit


    Original     		PDF HX6409/HX6218/HX6136 HX6409, HX6218, HX6136 HX6409 4096-word HX6218 2048-word 18-bit 065um

    HX6409

    Abstract: D1878
    Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    Original     		PDF HX6409 HX6218 HX6136 1x106 1x1014 1x109 1x1011 HX6409 D1878

    Untitled

    Abstract: No abstract text available
    Text: FIFO - HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low In addition, the three FIFOs have an output enable pin power, first-in first-out memories with clocked read and write OE and a master reset pin (MR). The read (CKR)


    Original     		PDF HX6409/HX6218/HX6136 HX6409, HX6218, HX6136 HX6409 4096-word HX6218 2048-word 18-bit

    HX6409

    Abstract: No abstract text available
    Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    Original     		PDF HX6409 HX6218 HX6136 1x106 1x1014 1x109 1x1011 HX6409

    Untitled

    Abstract: No abstract text available
    Text: HX6409/HX6218/HX6136 First-In First-Out Memory The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out FIFO memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136


    Original     		PDF HX6409/HX6218/HX6136 HX6409, HX6218, HX6136 HX6409 4096-word HX6218 2048-word 18-bit HX6136

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106rad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106rad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106rad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x10U 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)


    OCR Scan     		PDF 1x10srad 1x1014 1x109 1x1011 1x1010 HX6409 HX6218 HX6136