TRANSISTOR P15 Search Results

TRANSISTOR P15 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR P15 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Mitsubishi M54564 Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide	Original	A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p	PDF
2SC5436 Abstract: 2SC5800 uPA863TD-Q2 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2	PDF
2SC5603 Abstract: 2SC5676 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor	Original	PA846TD 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 2SC5603 2SC5676	PDF
ic 901 Abstract: 2SC5603 2SC5676 uPA846TC-T1 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor	Original	PA846TC 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 ic 901 2SC5603 2SC5676 uPA846TC-T1	PDF
2SC5435 Abstract: 2SC5600 IC 14558 5mA25 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor	Original	PA841TD 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 IC 14558 5mA25	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TD 2SC5435, 2SC5800) 2SC5435 2SC5800 P15685EJ1V0DS	PDF
9904 120 13843 Abstract: 2SC5435 2SC5800 nec 4308 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 9904 120 13843 2SC5435 2SC5800 nec 4308	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TD 2SC5436, 2SC5800) 2SC5436 2SC5800 P15686EJ1V0DS	PDF
st zo 607 Abstract: 2SC5436 2SC5800 30614 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 st zo 607 2SC5436 2SC5800 30614	PDF
2SC5602 Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA	Original	2SC5602 S21e2 2SC5602-T1 2SC5602 2SC5602-T1 nec 8725 marking TW NEC 2561	PDF
2SC5435 Abstract: 2SC5437 NEC 2505 nj Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor	Original	PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj	PDF
transistor NEC 7812 Abstract: 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA848TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5668, 2SC5676) Q1: 21.0 GHz fT high-gain transistor, ideal for 3.6 to 4.2 GHz oscillation application	Original	PA848TD 2SC5668, 2SC5676) S21e2 2SC5668 2SC5676 transistor NEC 7812 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812	PDF
MARKING 6260 Abstract: 2SC5436 2SC5800 P1573 uPA863TC-T1 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: High gain transistor suited for buffer applications	Original	PA863TC 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 MARKING 6260 2SC5436 2SC5800 P1573 uPA863TC-T1	PDF
2SC5435 Abstract: 2SC5600 of ic 3915 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: High gain transistor suited for buffer applications	Original	PA841TC 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 of ic 3915	PDF

nec japan 7815 Abstract: 2SC5435 2SC5745 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications	Original	PA854TC 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 nec japan 7815 2SC5435 2SC5745	PDF
2SC5435 Abstract: 2SC5745 0782 K 2564 nec 2401 831 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications	Original	PA854TC 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 2SC5435 2SC5745 0782 K 2564 nec 2401 831	PDF
2SC5603 Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA893TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • Built-in high gain transistor fT = 13.5 GHz TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA893TD S21e2 2SC5603) 2SC5603 PA893TD-T3 2SC5603	PDF
2SC5600 Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3	PDF
nec a1640 Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA891TD 2SC5600) 2SC5600 PA891TD-T3 P15538EJ1V0DS nec a1640	PDF
2SC5436 Abstract: 2SC5600 NEC 821 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821	PDF
2SC5600 Abstract: marking 603 npn transistor NEC 1093 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA891TD S21e2 2SC5600) 2SC5600 PA891TD-T3 2SC5600 marking 603 npn transistor NEC 1093	PDF
2SC5600 Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA871TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA871TD S21e2 2SC5600) 2SC5600 PA871TD-T3 2SC5600	PDF
2SC5603 Abstract: marking TW Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted	Original	2SC5603 S21e2 2SC5603-T1 2SC5603 marking TW	PDF
NEC 9712 Abstract: 2SC5676 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA872TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz	Original	PA872TD S21e2 2SC5676) 2SC5676 PA872TD-T3 NEC 9712 2SC5676	PDF

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TRANSISTOR P15 Search Results

TRANSISTOR P15 Result Highlights (5)

TRANSISTOR P15 Datasheets Context Search

Mitsubishi M54564

2SC5436

2SC5603

ic 901

2SC5435

Untitled

9904 120 13843

Untitled

st zo 607

2SC5602

2SC5435

transistor NEC 7812

MARKING 6260

2SC5435

nec japan 7815

2SC5435

2SC5603

2SC5600

nec a1640

2SC5436

2SC5600

2SC5600

2SC5603

NEC 9712