transistor
Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor
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X13769XJ2V0CD00
O-126)
MP-25
O-220)
MP-40
MP-45
MP-45F
O-220
MP-80
MP-10
transistor
POWER MOS FET 2sj 2sk
transistor 2sk
2SK type
n channel fet array
Low frequency power transistor
transistor mp40
TRANSISTOR P 3
high hfe transistor
list
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marking P33 transistor
Abstract: marking P32 transistor transistor P32 25 marking P34 DTA12 DTA124E LDTA124EET1 SC-89 100 p34 transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LDTA124EET1
SC-89
463C-01
463C-02.
marking P33 transistor
marking P32 transistor
transistor P32 25
marking P34
DTA12
DTA124E
LDTA124EET1
SC-89
100 p34 transistor
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Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide
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A/20V
16P2Z
16pin
225mil
05MIN.
20pin
300mil
20P2N
20P2E
Mitsubishi M54564
M54534
M54571P
m54667p
M54585FP
m54571
M54566FP
16P2N
M54522P equivalent
m54532p
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tyco igbt
Abstract: tyco igbt 1200V D81359
Text: V23990-P366-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P366-F
Tj150
D81359
tyco igbt
tyco igbt 1200V
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tyco igbt
Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit
Text: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P361-F
D81359
tyco igbt
P361
ntc thermistor 500 ohm
SPWM Inverter circuit
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P364
Abstract: tyco igbt V23990-P364-F
Text: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P364-F
Tj150
D81359
P364
tyco igbt
V23990-P364-F
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tyco igbt
Abstract: SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter
Text: V23990-P360-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P360-F
Tj150
D81359
tyco igbt
SPWM 555
spwm igbt
tyco igbt 1200V
HP-1001
SPWM Inverter
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sc 6038
Abstract: tyco igbt p363
Text: V23990-P363-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P363-F
D81359
sc 6038
tyco igbt
p363
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tyco igbt
Abstract: V23990-P365-F 600v 30 kHz IGBT
Text: V23990-P365-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P365-F
D81359
tyco igbt
V23990-P365-F
600v 30 kHz IGBT
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p367
Abstract: tyco igbt 1200V p367 diode tyco igbt R120 HP1001
Text: V23990-P367-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition 1200 V IC 17
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V23990-P367-F
Tj150
D81359
p367
tyco igbt 1200V
p367 diode
tyco igbt
R120
HP1001
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PRDP0016AA-A
Abstract: No abstract text available
Text: Magazine code Magazine material P300PC PVC Polyvinyl chloride Package name Renesas code Previous code DIP-16 PRDP0016AA-A 16P4 Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box
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P300PC
DIP-16
PRDP0016AA-A
PRDP0016AA-A
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tyco igbt
Abstract: P363 V23990-P363-F-PM diode rg 28
Text: Targetdatasheet flow PACK 0, 600V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P363-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P363-F-PM
-100A/ms
D81359
tyco igbt
P363
V23990-P363-F-PM
diode rg 28
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MC 340 transistor
Abstract: P367 tyco igbt 1200V V23990-P367-F-PM
Text: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P367-F-PM
-100A/ms
D81359
MC 340 transistor
P367
tyco igbt 1200V
V23990-P367-F-PM
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V23990-P366-F-PM
Abstract: tyco igbt tyco igbt 1200V
Text: Target datasheet flow PACK 0, 1200V, 10A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P366-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P366-F-PM
D81359
V23990-P366-F-PM
tyco igbt
tyco igbt 1200V
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SO692
Abstract: so692 equivalent SO642 transistor P39
Text: SO692 SMALL SIGNAL PNP TRANSISTOR • ■ ■ ■ Type Marking SO 692 P39 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER NPN COMPLEMENT IS SO642 2
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SO692
SO642
OT-23
SO692
so692 equivalent
SO642
transistor P39
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transistor P39
Abstract: No abstract text available
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642
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SO692
OT-23
SO642
OT-23
transistor P39
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transistor P39
Abstract: No abstract text available
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 s
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SO692
OT-23
SO642
OT-23
transistor P39
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V23990-P365-F-PM
Abstract: No abstract text available
Text: Target datasheet flow PACK 0, 600V, 25A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P365-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P365-F-PM
-100A/ms
D81359
V23990-P365-F-PM
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Untitled
Abstract: No abstract text available
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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SO692
OT-23
SO642
OT-23
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transistor P39
Abstract: small signal pnp SO642 SO692 4032C OC310
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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SO692
OT-23
SO642
OT-23
transistor P39
small signal pnp
SO642
SO692
4032C
OC310
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transistor P39
Abstract: SO642 SO692 4032C
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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SO692
OT-23
SO642
OT-23
-300icroelectronics.
transistor P39
SO642
SO692
4032C
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transistor P39
Abstract: No abstract text available
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO642 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB
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SO692
SO642
OT-23
transistor P39
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RT1P441
Abstract: RT3P33M
Text: PRELIMINARY RT3P33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P33M is compound transistor built with two RT1P441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT3P33M
RT3P33M
RT1P441
SC-88
JEITASC-88
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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OCR Scan
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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