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    P367 Search Results

    P367 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HM1L51LDP367H6PLF Amphenol Communications Solutions Metral® Board Connectors, Backplane Connectors, Right Angle Signal Header, 30 Position. Visit Amphenol Communications Solutions
    HM1L51LDP367H2PLF Amphenol Communications Solutions Metral® Board Connectors, Backplane Connectors, Right Angle Signal Header, 30 Position. Visit Amphenol Communications Solutions
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    P367 Price and Stock

    Rochester Electronics LLC NCP367DPMUEBTBG

    IC VOLT PROTECTRION OCP OVP 8DFN
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    DigiKey NCP367DPMUEBTBG Bulk 287,047 860
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    Semtech Corporation UCLAMP3671P.TNT

    TVS DIODE 36VWM 80VC SGP1610N2
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    DigiKey UCLAMP3671P.TNT Cut Tape 9,312 1
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    UCLAMP3671P.TNT Digi-Reel 9,312 1
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    Mouser Electronics UCLAMP3671P.TNT 16,367
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    Newark UCLAMP3671P.TNT Cut Tape 9,175 1
    • 1 $0.957
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    Richardson RFPD UCLAMP3671P.TNT 1
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    Avnet Silica UCLAMP3671P.TNT 15 Weeks 10,000
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    New Advantage Corporation UCLAMP3671P.TNT 20,000 1
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    Symmetry Electronics UCLAMP3671P.TNT 1
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    Rochester Electronics LLC FDP3672

    POWER FIELD-EFFECT TRANSISTOR, 5
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    DigiKey FDP3672 Bulk 7,244 328
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    onsemi NCP367DPMUECTBG

    IC VOLT PROTECTRION OCP OVP 8DFN
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    DigiKey NCP367DPMUECTBG Digi-Reel 1,994 1
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    NCP367DPMUECTBG Cut Tape 1,994 1
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    Mouser Electronics NCP367DPMUECTBG
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    Avnet Silica NCP367DPMUECTBG 23 Weeks 3,000
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    EBV Elektronik NCP367DPMUECTBG 4 Weeks 3,000
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    Flip Electronics NCP367DPMUECTBG 120,000
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    Win Source Electronics NCP367DPMUECTBG 49,000
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    Rochester Electronics LLC NCP367OPMUEOTBG

    POWER SUPPLY SUPPORT CIRCUIT, AD
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    DigiKey NCP367OPMUEOTBG Bulk 1,000 1,000
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    P367 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MC 340 transistor

    Abstract: P367 tyco igbt 1200V V23990-P367-F-PM
    Text: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


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    PDF V23990-P367-F-PM -100A/ms D81359 MC 340 transistor P367 tyco igbt 1200V V23990-P367-F-PM

    p367

    Abstract: tyco igbt 1200V p367 diode tyco igbt R120 HP1001
    Text: V23990-P367-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition 1200 V IC 17


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    PDF V23990-P367-F Tj150 D81359 p367 tyco igbt 1200V p367 diode tyco igbt R120 HP1001

    P281 B01

    Abstract: G187
    Text: LogiCORE IP Processing System 7 v4.02a DS871 October 16, 2012 Product Specification Introduction LogiCORE IP Facts Table The Processing System 7 IP is the software interface around the Zynq Processing System. The Zynq -7000 family consists of an system-on-chip (SoC) style


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    PDF DS871 Zynq-7000 P281 B01 G187

    Si9114DY

    Abstract: Si9114DJ Si9114 Si9420DY TL431
    Text: Si9114 Siliconix HighĆFrequency Switchmode Controller Features D Latched SHUTDOWN D SoftĆStart D 1.5ĆMHz Error Amp D 15Ć to 200ĆV Input Range D CurrentĆMode Control D Internal StartĆUp Circuit Description The Si9114 is a BiC/DMOS currentĆmode pulse width


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    PDF Si9114 Si9114 Si9114DJ Si9114DY Si9420DY TL431 P-36732--Rev. TL431

    2N7085

    Abstract: No abstract text available
    Text: 2N7085 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TO-257AB Hermetic Package D G Case Isolated S G D S N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol


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    PDF 2N7085 O-257AB P-36736--Rev. 30-May-94 2N7085

    2N7076

    Abstract: No abstract text available
    Text: 2N7076 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 200 0.10 28 TO-254AA Hermetic Package D G Case Isolated S D S G N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol


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    PDF 2N7076 O-254AA P-36736--Rev. 30-May-94 2N7076

    P132-P134

    Abstract: p331 TRANSISTOR P452
    Text: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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    aw7 TRANSISTOR

    Abstract: P449 I-CUBE iq P-033 Bus repeater p426 P-238 P122-P120 p331 TRANSISTOR P339
    Text: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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    SMP60N06-14

    Abstract: SMP60N06 70281 SMP60N06-14 equivalent SUP60N06
    Text: SMP60N06-14 N-Channel Enhancement-Mode Transistor Product Summary VDS V rDS(on) (W) ID (A) 60 0.014 60 See lowerĆcost version: SUP60N06Ć14 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


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    PDF SMP60N06-14 SUP60N0614 O-220AB P-36737--Rev. 30-May-94 SMP60N06-14 SMP60N06 70281 SMP60N06-14 equivalent SUP60N06

    GM120BP

    Abstract: resistor 60k ohm gssp gm120bp 638Bh K6R4016V1D gssp PUR50 P35-P34 DDR4 65p03
    Text: June 2006 GM120BP 8-BIT MICROCONTROLLER USER’S MANUAL REVISION 0.5 GM120BP TABLE OF CONTENTS 1. PRODUCT OVERVIEW . 3 2. MEMORY ORGANIZATION . 13


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    PDF GM120BP 40-Pin GM120BP 64-LQFP resistor 60k ohm gssp gm120bp 638Bh K6R4016V1D gssp PUR50 P35-P34 DDR4 65p03

    hecs 450

    Abstract: hecs 50 transistor w5c Liquid Rotor Resistor Starter SGCT "symmetrical gate commutated thyristor" UPS wiring how to control firing angle in thyristor SCR firing inverter circuit LMT 393 N
    Text: PowerFlex 7000 Medium Voltage AC Drive Firmware Version 7.xxx Technical Data Important User Information Solid-state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application, Installation and


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    PDF 7000-TD002B-EN-P 7000-TD002A-EN-P hecs 450 hecs 50 transistor w5c Liquid Rotor Resistor Starter SGCT "symmetrical gate commutated thyristor" UPS wiring how to control firing angle in thyristor SCR firing inverter circuit LMT 393 N

    P521 G

    Abstract: P452 p477 p520 p508 p364 p372 p421 data sheet P439 IR P116
    Text: MSX532 Matrix Switch Preliminary Data Sheet Features • SRAM-based, in-system programmable • 532 Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output


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    PDF MSX532 MKT-MSX532-DS P521 G P452 p477 p520 p508 p364 p372 p421 data sheet P439 IR P116

    SMP60N06-18

    Abstract: SMP60N06 SUP50N06-18 SMP60N06-18 power mosfet SUP50N06
    Text: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


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    PDF SMP60N06-18 18-mW SUP50N0618 O-220AB P-36737--Rev. 30-May-94 SMP60N06-18 SMP60N06 SUP50N06-18 SMP60N06-18 power mosfet SUP50N06

    transistor P479

    Abstract: P521 FAIRCHILD P124 FAIRCHILD p491 p331 TRANSISTOR p372 p525 AU38 p268 "Fairchild Semiconductor" fairchild aa35
    Text: Revised April 2003 MSX532 532 Port Digital Crosspoint Switch with LVTTL I/O’s General Description Features The MSX family of SRAM-based bit-oriented switching devices offer flow-through NRZ data rates of up to 150Mb/s and registered clock frequencies of up to 75MHz. The I/O


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    PDF MSX532 150Mb/s 75MHz. transistor P479 P521 FAIRCHILD P124 FAIRCHILD p491 p331 TRANSISTOR p372 p525 AU38 p268 "Fairchild Semiconductor" fairchild aa35

    diode sg 94

    Abstract: No abstract text available
    Text: Tem ic MOD200B/200C Siliconix Four N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) ( ß ) I d (A) 200 0.11 21 Leadform Options MOD200B . MOD200C . Bent Down Bent Up N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


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    PDF MOD200B/200C MOD200B MOD200C 36737--Rev. P-36737-- diode sg 94

    ais150

    Abstract: No abstract text available
    Text: Temic MODIOOB/IOOC Siliconix Four N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) 100 I d (A) 21 r DS(on) (Q ) 0.08 D Q Leadform Options MODIOOB . Bent Down MODIOOC . Bent Up Ò s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


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    PDF P-36734--Rev. ais150

    IRFD 110

    Abstract: IRFD 640
    Text: Tem ic IRFDllO N-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Œ ) 100 0.60 4-P in D IP G Œ s tr Id (A) 1.0 U a <Jt Top View Ô s N -C hannel M O S F E T Absolute Maximum Ratings (T^ = 25°C Unless Otherwise Noted)


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    PDF P-36735-- IRFD 110 IRFD 640

    2N7076

    Abstract: No abstract text available
    Text: Tem ic 2N7076 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 200 0.10 28 TO-254AA H erm etic P ackage O Case Isolated DSC, Top View N-Channel MOSFE'I' Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


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    PDF 2N7076 O-254AA 1503C) P-36736--Rev. 2N7076

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View


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    PDF 2N7089 O-257AB 1503C) P-36731-- P-36731--Rev.

    transistor 5BM

    Abstract: 100-C 2N7079
    Text: T e m ic 2N7079 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS(V) rnsfcm) (Ö) I d (A) -100 0.210 -1 7 TO-254AA Herm etic Package o 1 O— i I1 It Case Isolated Ô D


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    PDF 2n7079 O-254AA 100-C 2n7079_ P-36731â GGlfi37fl transistor 5BM 100-C 2N7079

    D469ADJ

    Abstract: 105120 D469AAP/883 5962-9098301MCA D469A D469AAP
    Text: T e m ic D469A Siliconix Quad High-Current Power Driver Features Applications End Products • • • • • • • • • Motor Drives • Power Supplies • dc/dc Converters • • • • • • Wide Voltage Range High Current Drive Fast Rise and Fall Tiroes


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    PDF d469a D469A P-36736â 2SM73S D469ADJ 105120 D469AAP/883 5962-9098301MCA D469AAP

    D469ADJ

    Abstract: No abstract text available
    Text: T e m ic D469A Siliconix Quad High-Current Power Driver Features End Products Applications Wide Voltage Range High C urrent Drive Fast Rise and Fall Times Low Power Consumption Single Power Supply Low O utput Impedance TTL/CM OS Inputs ESD Protection • M otor Drives


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    PDF D469A D469A P-36736--Rev. D469A_ D469ADJ

    P60N06

    Abstract: P60N06-14 m p60n06 SMP60N06-14
    Text: Tem ic SMP60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary VDS V r DS(on) (S2) I d (A ) 60 0.014 60 See lower-cost version: SU P60N06-14 D Q TQ-220AB o DRAIN connected to TAB Ô S Top View N-Channel MOSFET


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    PDF SMP60N06-14 P60N06-14 TQ-220AB P-36737--Rev. P60N06 P60N06-14 m p60n06 SMP60N06-14

    TMP90PM40N

    Abstract: TMP90PM40F TMP90PM40 IC TMP90PM40N, Toshiba TMP90PM
    Text: TOSH IBA TMP90PM40 C M O S 8-BIT MICROCONTROLLERS TM P90PM 40N /TMP90PM40F 1. . OUTLINE A N D CHARACTERISTICS The TMP90PM40 is a system evalution LSI having a built in One-Time PROM for TMP90CM40. A programming and verification for the internal PROM is achieved by using a


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    PDF TMP90PM40 P90PM /TMP90PM40F TMP90PM40 TMP90CM40. TMP90CM40 TMP90C840A TMP90C840A. TMP90PM40N TMP90PM40F IC TMP90PM40N, Toshiba TMP90PM