Untitled
Abstract: No abstract text available
Text: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance 5 nH typical
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VS-GP250SA60S
E78996
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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2SC5454
Abstract: ic n 3856
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW
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2SC5454
2SC5454
ic n 3856
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SA1627A PNP SILICON TRANSISTOR PN P EPI T AX I AL SI LI CON T RAN SI ST OR 1 ̈ TO-252 DESCRI PT I ON The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 ̈ TO-126 FEAT U RES * High voltage
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2SA1627A
O-252
2SA1627A
O-126
O-126C
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
2SA1627AL-x-T6C-K
2SA1627AG-x-T6C-K
2SA1627AL-x-TN3-R
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Triode MARKING 048
Abstract: 421f 2N4854 2N3838 2N4854U JANTXV 2N4854
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 November 2001. INCH-POUND MIL-PRF-19500/421F 25 August 2001 SUPERSEDING MIL-PRF-19500/421E 2 April 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP,
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MIL-PRF-19500/421F
MIL-PRF-19500/421E
2N3838,
2N4854,
2N4854U
Triode MARKING 048
421f
2N4854
2N3838
2N4854U
JANTXV 2N4854
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2N3838
Abstract: 2N4854 2N4854U IC tl 072
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 12 January 2009. MIL-PRF-19500/421G w/AMENDMENT 1 12 October 2009 SUPERSEDING MIL-PRF-19500/421G 14 March 2004 PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/421G
2N3838,
2N4854,
2N4854U,
MIL-PRF-19500.
2N3838
2N4854
2N4854U
IC tl 072
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2N4854
Abstract: 2n4854 to-78 transistor f 421 TO-78 microsemi
Text: 2N4854 Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854 device in a 6-pin TO-78 package is military qualified up to a JANTXV level for
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2N4854
MIL-PRF-19500/421
2N4854.
MIL-PRF-19500/421.
T4-LDS-0275,
2n4854 to-78
transistor f 421
TO-78 microsemi
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Untitled
Abstract: No abstract text available
Text: 2N4854 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854 device in a 6-pin TO-78 package is military qualified up to a JANTXV level for
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2N4854
MIL-PRF-19500/421
2N4854
2N4854.
MIL-PRF-19500/421.
T4-LDS-0275,
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2N4854
Abstract: No abstract text available
Text: 2N4854U Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854U device in a low profile 6-pin U package is military qualified up to a JANTXV
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2N4854U
MIL-PRF-19500/421
2N4854.
MIL-PRF-19500/421.
T4-LDS-0275-1,
2N4854
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2N3838
Abstract: No abstract text available
Text: 2N3838 Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N3838 device in a 6-pin Flatpack package is military qualified up to a JANTXV level for
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2N3838
MIL-PRF-19500/421
2N3838
MIL-PRF-19500/421.
T4-LDS-0274,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3838 Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N3838 device in a 6-pin Flatpack package is military qualified up to a JANTXV level for
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2N3838
MIL-PRF-19500/421
2N3838
MIL-PRF-19500/421.
T4-LDS-0274,
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Untitled
Abstract: No abstract text available
Text: 2N4854U Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854U device in a low profile 6-pin U package is military qualified up to a JANTXV
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Original
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2N4854U
MIL-PRF-19500/421
2N4854U
2N4854
T4-LDS-0275-1,
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MIL-STD-1686
Abstract: LP1500 LP1500SOT223 P100 noise gate compression
Text: Filtronic LP1500SOT223 Low Noise, High Linearity Packaged PHEMT Solid State FEATURES • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range
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LP1500SOT223
LP1500SOT223
MIL-STD-1686
MILHDBK-263.
DSS-026
LP1500
P100
noise gate compression
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LC 3524
Abstract: ic 3524 I2 200 LB-22 ic LC 3524
Text: BIG IDEAS IN BIG POWER ” • PowerTech 90 AMPERE TRANSISTOR PT-3523 PT-3524 FEATURES PT-3523 PT-3524 Vceo . 4 0 0 V . 450V Vcb0 . 4 5 0 V . 500V
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OCR Scan
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PT-3523
PT-3524
LC 3524
ic 3524
I2 200
LB-22
ic LC 3524
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PDF
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LC 3524
Abstract: ic 3524 ic LC 3524
Text: BIG IDEAS IN PowerTech BIG POWER ” • 9 0 AMPERE TRANSISTOR PT-3523 PT-3524 FEATURES PT-3523 PT-3524 Vceo. 4 0 0 V . Vcb0 . 4 5 0 V . Veb0. 10V
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OCR Scan
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PT-3523
PT-3524
LC 3524
ic 3524
ic LC 3524
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PDF
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Untitled
Abstract: No abstract text available
Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. PT=625mW High Collector Current. (lc =500mA) Complementary to SS9012 Excellent hFE linearity.
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OCR Scan
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SS9013
625mW)
500mA)
SS9012
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AT415
Abstract: No abstract text available
Text: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga
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OCR Scan
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AT-41511,
T-41533
AT-41511:
AT-41533:
OT-23
OT-143
AT-41511
AT-41533
OT-23,
AT415
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PDF
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avantek
Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
Text: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz
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OCR Scan
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AT-42035
AT-42035
microwave64
avantek
Avantek, Inc
321E
T-31-21
8v-312
Avantek amplifier 8 12 GHz
Avantek amplifier 12.5 sa
AVANTEK oscillator
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PDF
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NE46734
Abstract: cm3x sot89 "NPN TRANSISTOR"
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE46734 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT FEATURES LOW NOISE FIGURE UNMATCHED 4: 2.4 dB at 500 MHz 2.3 dB TYP at 200 MHz HIGH S21 GAIN4: 12 dB at 500 MHz 20 dB TYP at 200 MHz HIGH PT LOW COST DESCRIPTION Collector Current, Ic (mA)
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OCR Scan
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NE46734
NE46734
2SC2954
IS12I
OT-89)
cm3x
sot89 "NPN TRANSISTOR"
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PDF
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powertech
Abstract: No abstract text available
Text: BIG IDEAS IN BIG POWER ” H p i PowerTecn • 500 A M P E R E S PT- 9 5 0 1 P T -9 5 Q 2 SILICON IMPIM TRANSISTOR FEATURES: v C E s a t . 0 .5V @ 300A h p g . V B E . 1.5V @ 3 0 0 A
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OCR Scan
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PB-500
18WIRE
powertech
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PDF
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2SK514
Abstract: d1352 C982 M-0258 MA 7824 T460-8525 FT010 ra022 2sk514 transistor transistor 2sk514
Text: iM u m y ? > > * * Junction Field Effect Transistor 2SK514 * at H M W W t i L l m • 4.0 ± 0 .1 I 1 .0 * 0 ,2 T a =25 bC) K r - h • k h r - > n n * flE 4 r - > * h £ m m -50 V Vqso -50 V Vpsx * 50 V at Id 20 raA « Ig 10 mA * Pt 250 mW Tj 125 X > ; x a > a #
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OCR Scan
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2SK514
2SK514
d1352
C982
M-0258
MA 7824
T460-8525
FT010
ra022
2sk514 transistor
transistor 2sk514
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PDF
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Untitled
Abstract: No abstract text available
Text: P O W E RE X INC m M B^E B ΠD m 72T4bSl D0G432b S BPRX KC224503 K Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 75697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Common Emitter Dual Darlington
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OCR Scan
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72T4bSl
D0G432b
KC224503
BP107,
Amperes/600
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PDF
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Untitled
Abstract: No abstract text available
Text: AVANTE< INC EOE D • 0A V A K TEK 1 1 4 1 1 fab 0G0h4afe, T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 100 mil Package Features • • High Output Power: 12.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:
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OCR Scan
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AT-42010
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PDF
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D44R4
Abstract: D44R2 D40N5 D44R8 D40N1 D40N2 D40N3 D40N4 D40P1 D40P3
Text: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250
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OCR Scan
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500mA
D40N1
D40N2
D40N3
D40N4
D40N5
D40P1
D40P3
D40P5
D42RI
D44R4
D44R2
D44R8
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PDF
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2N5305
Abstract: 2N5356 BC pnp 200mA npn 940 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN
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OCR Scan
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2N4256
2N4424
2N4425
130-b40
2IM5172
2N5174
2N5232
2N5232A
2N5249A
2N5305
2N5356
BC pnp 200mA
npn 940
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