TF230
Abstract: NP50P04KDG NP50P04KDG-E1-AY NP50P04KDG-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P04KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P04KDG-E1-AY Note
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NP50P04KDG
NP50P04KDG
NP50P04KDG-E1-AY
NP50P04KDG-E2-AY
O-263
MP-25ZK)
O-263)
TF230
NP50P04KDG-E1-AY
NP50P04KDG-E2-AY
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NP50P06KDG
Abstract: NP50P06KDG-E1-AY NP50P06KDG-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P06KDG-E1-AY Note
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NP50P06KDG
NP50P06KDG
NP50P06KDG-E1-AY
NP50P06KDG-E2-AY
O-263
MP-25ZK)
O-263)
NP50P06KDG-E1-AY
NP50P06KDG-E2-AY
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2sd313 equivalent
Abstract: 2SD313
Text: DC COMPONENTS CO., LTD. 2SD313 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general-purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28
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2SD313
O-220AB
2sd313 equivalent
2SD313
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MJE2955T
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. R MJE2955T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28
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MJE2955T
O-220AB
-400mA
-500mA,
MJE2955T
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MJE3055T
Abstract: 890 f 562 ic transistor MJE3055T
Text: DC COMPONENTS CO., LTD. R MJE3055T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28
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MJE3055T
O-220AB
400mA
500mA,
MJE3055T
890 f 562 ic
transistor MJE3055T
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TIP125
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. TIP125 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base
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TIP125
O-220AB
-100mA
-12mA
-20mA
-500mA,
TIP125
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LB125E
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. LB125E DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for lighting applications and switch mode power supplies. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base 2 = Collector
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LB125E
O-220AB
LB125E
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2sd880 equivalent
Abstract: 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR
Text: DC COMPONENTS CO., LTD. 2SD880 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66)
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2SD880
O-220AB
2sd880 equivalent
2SD880, 1.5 power dissipation
2SD880
2sD880 TRANSISTOR
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LB124E
Abstract: Ic 749 lb124
Text: DC COMPONENTS CO., LTD. LB124E DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base
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LB124E
O-220AB
100MHz
LB124E
Ic 749
lb124
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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MRF325
Abstract: BH rn transistor
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON
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MRF325
MRF325
BH rn transistor
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IR2E27A
Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r
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24DIP/24SOP
IR2C10
IR2E34
IR2E27A
Sharp IR2E02
IR2E01
IR2E25
Sharp IR2E27A
IR2E02
IR2E27A SHARP
LED ir2e01
ir2e09
IR2E28
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MJE12007
Abstract: 221A-04 MJE-12007
Text: MOTQRCLA SC XSTRS/R 15E 0 F I b3b?2S4 0005301 Ô | T - 3Î- I/ MOTOROLA SEMICONDUCTOR MJE12007 TECHNICAL DATA 2.5 A M P E R E H O RIZON TAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . . . specifically designed for use in small screen black and white
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MJE12007
MJE12007
221A-04
MJE-12007
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Untitled
Abstract: No abstract text available
Text: N AMER P H IL IP S /D IS C R E T E bRE D • b b 5 3 R 31 Philips Sem iconductors D 0 3 0 7 1 D 035 H A P X Product Specification BUK457-600B Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a
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BUK457-600B
bbS3T31
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2N5672
Abstract: 5671 2N5671 2n transistor high
Text: 2N 5671 2N 5672 NPN S ILIC O N T R A N S IS T O R S ,E P IT A X IA L COLLECTOR T R A N S IS T O R S S I L I C I U M , N P N C O L L E C T E U R E P I T A X IE - High speed, high current, high power transistor Transistor de puissance rapide fo rt courant i 90 V
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CB-19
2N5672
5671
2N5671
2n transistor high
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402P
Abstract: No abstract text available
Text: DIONICS INC. 6 5 R U S H M O R E S T ., W E S T B U R Y , N Y 11590 5 1 6 » 9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON PNP TRANSISTOR ARRAYS Dl 402P fÿl The Dionics Dl 402P, Dl 602P and Dl 802P Series of High Voltage PNP Transistor arrays are specifically designed for plasma
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100MHZ
402P
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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Untitled
Abstract: No abstract text available
Text: r s T SGS-THOMSON m 7M ^OœiLI^TriOiOOi BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PR EFER RED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAM ETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
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BULK128D
C6949D
SC-0351
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transistor KSA
Abstract: AF109R
Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .
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Q60106-X109-R1
Q004QS?
AF109R
transistor KSA
AF109R
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ULN2003NA
Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module
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TD62M
TD62C
TD/TB62
N29B3a
54S63PA
54597p
54598PÜ
2786A
UDN2580a
ULN2003NA
transistor af 178
ms4581p
8ch pnp DARLINGTON TRANSISTOR ARRAY
DARLINGTON 3A 100V npn array
pnp darlington array ULN
ULN2004NA
54566P
pnp transistor array uln
TD62981P
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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