TRANSISTOR R2B Search Results

TRANSISTOR R2B Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR R2B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Helipot Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note Text: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used	OCR Scan	MIL-S-19500/425 JAN2N5431, JANTX2N5431 pulse-repe0/425 MIL-S-19500, MIL-S-19500 Helipot JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note	PDF
RF NPN POWER TRANSISTOR 3 GHZ Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts Text: ERICSSON ^ PTE 20173* 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and	OCR Scan	G-200 RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 0inE D ^53131 0D1S5A7 □ RZB12250Y r- %->'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.	OCR Scan	RZB12250Y 100ps;	PDF
JX - 638 Abstract: No abstract text available Text: ERICSSON ^ PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor D escription The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically	OCR Scan	G-200, JX - 638	PDF
c38 transistor Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20202 125 Watts, 1465-1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minim um output power, it is specifically intended for cellular	OCR Scan	0395X 0748X	PDF
Ericsson RF POWER TRANSISTOR Abstract: No abstract text available Text: ERICSSON ^ PTB 20175 55 Watts, 1.9-2.00 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across 1.9 to 2.0 GHz frequency band. It is rated at 55 watts minimum output power and may be used for	OCR Scan	G-200 ATC-100 Ericsson RF POWER TRANSISTOR	PDF
diode LT 1n4007 Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch	OCR Scan	5055B BC337 BD135 1N4007 100A101JP50 diode LT 1n4007 transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 3 pin TRIMMER capacitor 1n4007 mttf	PDF
LM1946M Abstract: 8707 diode LM1946N C1995 LM1946 ir 8707 RL2008-52 8707 ic Text: LM1946 Over Under Current Limit Diagnostic Circuit General Description Features The LM1946 provides the industrial or automotive system designer with over or under current limit detection superior to that of ordinary transistor or comparator-based circuits	Original	LM1946 LM1946M 8707 diode LM1946N C1995 ir 8707 RL2008-52 8707 ic	PDF
marking c14a Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001 Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001	PDF
marking c14a Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a	PDF
RO3010 Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372 Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372R3 MRF372R5 MRF372R3 MRF372 RO3010 marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
marking c14a Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800 Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A MRF374A marking c14a ATC - Semiconductor Devices transistor j239 04 6274 045 000 800	PDF

transmitter 446 mhz Abstract: R5B transistor J960 470-860 mhz Power amplifier w Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF372 transmitter 446 mhz R5B transistor J960 470-860 mhz Power amplifier w	PDF
MRF374A Abstract: marking c14a l1a marking Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A marking c14a l1a marking	PDF
RO3010 Abstract: RF POWER VERTICAL MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374 MRF374A RO3010 RF POWER VERTICAL MOSFET	PDF
RO30 Abstract: mrf374 Text: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A RO30 mrf374	PDF
transistor R1A 37 Abstract: 5233 mosfet J146 VJ1210y Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y	PDF
transistor BD 135 Abstract: diode rN 4007 bc337 transistor linear amplifier 470-860 transistor BC337 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push-pull package configuration aids broadband amplifier designs.	OCR Scan	100A101JP BC337 TPV5055B transistor BD 135 diode rN 4007 bc337 transistor linear amplifier 470-860 transistor BC337	PDF
RO3010 Abstract: j352 transistor j352 bc17a VJ2225Y Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A RO3010 j352 transistor j352 bc17a VJ2225Y	PDF
RO3010 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 RO3010	PDF
R10B Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R5 R10B	PDF
R4A marking Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R5 R4A marking	PDF

TRANSISTOR R2B Search Results

TRANSISTOR R2B Result Highlights (5)

TRANSISTOR R2B Datasheets Context Search

Helipot

RF NPN POWER TRANSISTOR 3 GHZ

Untitled

JX - 638

c38 transistor

Untitled

Ericsson RF POWER TRANSISTOR

diode LT 1n4007

LM1946M

marking c14a

marking c14a

RO3010

A5 GNE mosfet

marking c14a

transmitter 446 mhz

MRF374A

RO3010

RO30

transistor R1A 37

transistor BD 135

RO3010

RO3010

R10B

R4A marking