transistor NEC D 586
Abstract: TRANSISTOR R46
Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
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2SC4095
2SC4095
VP15-00-1
IR30-00-1
WS60-00-1
transistor NEC D 586
TRANSISTOR R46
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NEC IC D 553 C
Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.
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2SC4095
2SC4095
NEC IC D 553 C
nec d 588
nec 817
D 5038 transistor
PE 7058
TRANSISTOR R46
p10367
transistor NEC D 586
NEC D 586
RIO R47
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nec 817
Abstract: TRANSISTOR R46 2SC4095 transistor r47
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
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2SC4095
2SC4095
nec 817
TRANSISTOR R46
transistor r47
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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NEC 7924
Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Text: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1
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2SC5013
2SC5013-T1
2SC5013-T2
NEC 7924
ic 7924
2SC5013
2SC5013-T1
2SC5013-T2
application of IC 4538
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2SC5013
Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation
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2SC5013
2SC5013-T1
2SC5013
2SC5013-T1
transistor r47
MARKINGR46
marking R46
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CD 1691 CB
Abstract: NEC 7924 NEC D 986 IC - 7434
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •
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2SC5013
2SC5013-T1
2SC5013-T2
CD 1691 CB
NEC 7924
NEC D 986
IC - 7434
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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LT1185
Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense
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LT1185
LT1185
transistor BD 424
LT1185C
LT1185CT
LT1185I
LT1185IT
LT1185M
LT1185MK
diode 1334
106 6K tantalum capacitors
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Untitled
Abstract: No abstract text available
Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA
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LT1185
O-220
LT1185
LT1129
200mA
400mV
LT1175
500mA
LT1585
LT1964
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LT1185CT
Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA
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LT1185
O-220
LT1185
LT1129
200mA
400mV
LT1175
500mA
LT1585
LT1964
LT1185CT
LT1185C
LT1185CQ
LT1185I
LT1185IQ
LT1185M
LT1185MK
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B81121 X2 mkt
Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r
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AN-TDA16888-0-010323
100kHz
V/18A;
-12V/1A;
V/100mA
Room14J1
Room1101
B81121 X2 mkt
B81121 X2 mkp
AN-TDA16888-0-010323
ELKO capacitors
MKT .22K 250V X2
EPCOS 230 00 O
ELKO CAPACITOR 63v 2,2
elko capacitor
TDA 16888
B81121 X2
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LT1185
Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special
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LT1185
LT1185
118500mA
LT1120A
LT1129
200mA
400mV
LT1175
500mA
LT1585
LT1185C
LT1185CT
LT1185I
LT1185IT
LT1185M
LT1185MK
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Untitled
Abstract: No abstract text available
Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special
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LT1185
LT1185
LT1120A
LT1129
200mA
400mV
LT1175
500mA
LT1585
1185fd
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Untitled
Abstract: No abstract text available
Text: MP3393 8-String Step-Up White LED Driver with External Transistor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3393 is a step-up controller with 8 current channel sources designed to power WLED backlights for large LCD panels. • • •
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MP3393
MP3393
202mV
MP3393â
SOIC28
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MAX17119EVKIT
Abstract: max17119E Q1/C84-8
Text: 19-5078; Rev 1; 4/10 MAX17119 Evaluation Kit The MAX17119 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17119 (IC) 10-channel, high-voltage, level-shifting scan driver for active-matrix, thin-film transistor (TFT),
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MAX17119
MAX17119
10-channel,
MAX17119EVKIT
max17119E
Q1/C84-8
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b342 transistor
Abstract: 25t125 TRANSISTOR BO 344 B344 B341 1B2 zener diode B-343 B343 TG-400 B342
Text: 1 D I 3 0 0 M P - 1 2 0 3 0 0 A / N °7 “ •Outline Drawings h POWER TRANSISTOR MODULE : Features • High DC Current Gain • K r tlE • ffittflMftttERTflE ■ffljSs : Applications • General Purpose Inverter > '< — 9 • ( Uninterruptible Power Supply
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1DI300MP-120Ã
l95t/R89
b342 transistor
25t125
TRANSISTOR BO 344
B344
B341
1B2 zener diode
B-343
B343
TG-400
B342
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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ETL81-050
Abstract: SMT M4 diode M103 T151
Text: ETL81-050000A : Outline Drawings )V s < r7 - POWER TRANSISTOR MODULE Features • 7 1 ; —ip. 4 1; 's * f $ 4 • ASO — K r t/ tt Including Free W heeling Diode Excellent Safe Operating Area • Insulated Type : Applications • 7. <i "j T V ? Power S w itching
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ETL81-050
E82988
I95t/R89
Shl50
SMT M4 diode
M103
T151
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2DI150M-120
Abstract: M210 transistor AFR 16
Text: 2 D I ✓ 1 ^ ^ 5 is M - 1 2 1 5 o a ^ i> il — )\/ POWER TRANSISTOR MODULE : Features • • hFE^'flSl^ High Arm Short Circuit Capability High DC Current Gain ft 4 V's • 7U — • Jfeillffi — KrtJSS Including F reew heeling Diode Insulated Type
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2DI150M-120O5OA)
E82988
2DI150M-120
M210
transistor AFR 16
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b175 transistor
Abstract: FAF 45 DIODE
Text: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw •N Uninterruptible Power Supply X - f Servo & Spindle Drive for NC Machine Tools
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6DI75M-050
I95t/R89)
b175 transistor
FAF 45 DIODE
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transistor 2N3906 datasheet
Abstract: 2n3906 equivalent transistor "PNP Transistor" dip 2.54mm Header 3 Pin 2.54mm Header 8 Pin 10m resistor ecap Resistor 10K data sheet transistor 2n3906 2n3906
Text: BOM for Combo Keyboard Rev 02, Feb 18 2000 Description Qty Value CAP 4 100n CAP 2 22p ECAP 1 1u ECAP 2 4u7 Resistor 1 10M Resistor 3 10K Resistor 2 27 ohm Resistor 3 330 ohm Supply Ferrite 2 0.5 AXIAL LED 3 GREEN PNP TRANSISTOR 1 2N3906 MC68HC908JB8 1 QFP44
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2N3906
MC68HC908JB8
QFP44
R9-11
transistor 2N3906 datasheet
2n3906 equivalent transistor
"PNP Transistor"
dip 2.54mm Header 3 Pin
2.54mm Header 8 Pin
10m resistor
ecap
Resistor 10K
data sheet transistor 2n3906
2n3906
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JU003
Abstract: No abstract text available
Text: 2DI5OZ-14O 50a * ± / < 7 - jE S > 3 . - ì W ’ Outline Drawings POWER TRANSISTOR MODULE : Features • ïf t liJ E High Voltage • 7 'J — Kfàjft • Including F re e w h e e lin g Diode Excellent Safe Operating Area • fôSiüJfé Insulated Type
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2DI5OZ-14O
E82988
19S24^
I95t/R89)
Sh150
JU003
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TFM 1380 T
Abstract: No abstract text available
Text: 1D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • Features • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p licatio n s • ’X M .t) 7*4 "/•?■>?
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E82988
1995-9Cl95t/R89)
TFM 1380 T
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