transistor SD335
Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen
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Si-npn-Planar-EpitaxieSC116
Si-npn-Planar-EpitaxieSC117
Si-npn-Planar-EpitaxieSC118
Si-npn-Planar-EpitaxieSC119
Si-npn-Planar-EpitaxieSC236
Si-npn-Planar-EpitaxieSC237
Si-npn-Planar-EpitaxieSC238
VorSC239
Si-pnp-Planar-EpitaxieSC307
Si-pnp-Planar-EpitaxieSC308
transistor SD335
SF126
SF127
SF128
SD337
sd336
SF137
BF241 TRANSISTOR
SD349
SD339
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AN3025
Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
Text: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace
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AN3025
AN3025
transistor working principle
tinning
METCAL MX-500 circuit
free transistor
SN62
SN63
GC Electronics 108109
metcal
transistor free
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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DEVICE T76
Abstract: 2SC4571 2SC4571-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4571 NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold
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2SC4571
2SC4571
2SC4571-T1
DEVICE T76
2SC4571-T1
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t72 marking
Abstract: 2SC4570 2SC4570-T1 transistor for UHF
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4570 NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold
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2SC4570
2SC4570
2SC4570-T1
t72 marking
2SC4570-T1
transistor for UHF
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marking R33
Abstract: 2SC4227 2SC4227-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4227
2SC4227
S21e2
2SC4227-T1
marking R33
2SC4227-T1
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2SC4226
Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4226
2SC4226
S21e2
2SC4226-T1
2SC4226 APPLICATION NOTES
PU10450EJ01V0DS
R25 marking
2SC4226 datasheet
marking r25 NPN
2SC4226-T1
transistor s2p
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2SC4228
Abstract: 2SC4228-T1 TRANSISTOR R44
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4228
2SC4228
S21e2
2SC4228-T1
2SC4228-T1
TRANSISTOR R44
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NTE359
Abstract: 8-32N
Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances
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NTE359
175MHz
175MHz
8-32-NC-3A
NTE359
8-32N
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Untitled
Abstract: No abstract text available
Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
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NTE346
NTE346
500MHz
50mAdc
12Vdc
175MHz
100mW,
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Untitled
Abstract: No abstract text available
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
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SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
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SGA8543Z-EVB2
Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
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SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
SGA8543Z-EVB2
marking code 85Z
SGA8543ZSQ
gm 88
140C
rfmd model marking code
PHEMT marking code B
Transistor code zl
HEMT marking P
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NTE346
Abstract: npn 1W 40V to39
Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
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NTE346
NTE346
500MHz
50mAdc
12Vdc
175MHz
100mW,
npn 1W 40V to39
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BFR93 application note
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT93
R77/02/pp10
BFR93 application note
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BFT93
Abstract: BFR93 application note bfr93 MSB003 BFR93A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT93
R77/02/pp10
BFT93
BFR93 application note
bfr93
MSB003
BFR93A
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SOT333
Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage
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SOT23 W1P NXP
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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BFT92
MSB003act
R77/02/pp10
SOT23 W1P NXP
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2SC5436
Abstract: NESG2107M33
Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA868TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor
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PA868TS
2SC5436,
NESG2107M33)
S21e2
2SC5436
NESG2107M33
2SC5436
NESG2107M33
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Transistor C G 774 6-1
Abstract: transistor 2N4033 2N4033
Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53
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2N4033
Transistor C G 774 6-1
transistor 2N4033
2N4033
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TP3400
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output
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TP3400
TP3400
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BFR96
Abstract: BFR96 TRANSISTOR transistor bfr96
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
D10b3
BFR96 TRANSISTOR
transistor bfr96
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2SC2312
Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating
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2SC2312
27MHz
27MHz,
-30dB
-62dB
-65dB.
2SC2312
100mA
27mhz transistor
27mhz rf ic
A7 NPN EPITAXIAL
A7 transistor
transistor A7
RF POWER TRANSISTOR
npn epitaxial planar high voltage transistor
FET Transistor Structure
mitsubishi vcb
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package,
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BD179
BD179
OT-32
OT-32
O-126)
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Transistor C G 774 6-1
Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers
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BFR96
Transistor C G 774 6-1
C G 774 6-1
transistor a 1941
a/Transistor C G 774 6-1
RLF100-11/12/Transistor C G 774 6-1
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