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    TRANSISTOR S1A Search Results

    TRANSISTOR S1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL


    Original     		PDF FJX3904 SC-70 FJX3904TF

    FJX3904

    Abstract: No abstract text available
    Text: FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage


    Original     		PDF FJX3904 OT-323 FJX3904

    transistor marking s1a

    Abstract: S1a SOT marking S1A
    Text: FJX3904 FJX3904 General Purpose Transistor 2 NPN Epitaxial Silicon Transistor 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage Parameter 60 V VCES Collector-Emitter Voltage


    Original     		PDF FJX3904 OT-323 transistor marking s1a S1a SOT marking S1A

    transistor marking s1a

    Abstract: No abstract text available
    Text: FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage


    Original     		PDF FJX3904 OT-323 FJX3904TF transistor marking s1a

    transistor marking s1a

    Abstract: FJX3904
    Text: FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage


    Original     		PDF FJX3904 OT-323 transistor marking s1a FJX3904

    transistor marking s1a

    Abstract: TRANSISTOR S1A FJX3904
    Text: FJX3904 FJX3904 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage


    Original     		PDF FJX3904 OT-323 transistor marking s1a TRANSISTOR S1A FJX3904

    transistor marking s1a

    Abstract: No abstract text available
    Text: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage


    Original     		PDF FJX3904 OT-323 FJX3904 transistor marking s1a

    transistor marking s1a

    Abstract: TRANSISTOR S1A FJX3904 FJX3904TF 130010 TRANSISTOR I22 marking
    Text: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage


    Original     		PDF FJX3904 OT-323 FJX3904 transistor marking s1a TRANSISTOR S1A FJX3904TF 130010 TRANSISTOR I22 marking

    S1A MARKING CODE

    Abstract: marking code S1A sot23 H12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original     		PDF SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 S1A MARKING CODE marking code S1A sot23 H12E

    transistor marking s1a

    Abstract: No abstract text available
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original     		PDF SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 transistor marking s1a

    1N916

    Abstract: MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original     		PDF SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 Feb-18-2002 1N916 MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E

    power 22E

    Abstract: SMBT3906 1N916 SMBT3904
    Text: SMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type Marking SMBT3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT3904 100mA SMBT3906 VPS05161 Jul-11-2001 EHP00763 EHP00764 EHP00757 power 22E SMBT3906 1N916 SMBT3904

    3904

    Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
    Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF 100mA VPS05161 OT-23 Oct-14-1999 EHP00763 EHP00764 EHP00757 EHP00758 3904 "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23

    CH3904GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CH3904GP OT-23 OT-23) 200mA) CH3904GP

    SE701

    Abstract: VDMOS
    Text: polyfet rf devices SE701 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,


    Original     		PDF SE701 SE701 VDMOS

    SJ701

    Abstract: VDMOS
    Text: polyfet rf devices SJ701 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,


    Original     		PDF SJ701 SJ701 VDMOS

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750,

    "marking s1a" sot-23

    Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750, "marking s1a" sot-23 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA


    Original     		PDF MMBT3904-AU OT-23 200mA 300MHz 10mAdc, 20Vdc 100MHz TS16949 AEC-Q101 2002/95/EC

    ic power 22E

    Abstract: H12E h11e EHP00761 10K275 marking S1A
    Text: SMBT3904S NPN Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3906S (PNP)


    Original     		PDF SMBT3904S 100mA SMBT3906S VPS05604 EHA07178 OT363 EHP00763 EHP00764 Jul-02-2001 ic power 22E H12E h11e EHP00761 10K275 marking S1A

    03n06

    Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
    Text: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener


    Original     		PDF RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE 03n06 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904S NPN Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3906S (PNP)


    Original     		PDF SMBT3904S 100mA SMBT3906S VPS05604 EHA07178 OT363

    2262C

    Abstract: 2262ca smps transformer pc
    Text: /Z T SCS-THOMSON TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TW O LEVELS TRANSISTOR CURRENT LIMI­ TATION ■ DOUBLE PULSE SUPPRESSION


    OCR Scan     		PDF TEA2262 TEA2262 2262C 2262ca smps transformer pc

    3904

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration


    OCR Scan     		PDF Q68000-A4416 OT-23 D1EE537 0235bGS fi535fc 01EBS3T 3904