p281
Abstract: P28-1 TRANSISTOR P281
Text: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2246
Abstract: No abstract text available
Text: polyfet rf devices F2246 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2246
F2246
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PRF134
Abstract: No abstract text available
Text: polyfet rf devices PRF134 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
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PRF134
PRF134
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F2211
Abstract: No abstract text available
Text: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2211
F2211
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F2248
Abstract: No abstract text available
Text: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2248
F2248
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PRF136
Abstract: No abstract text available
Text: polyfet rf devices PRF136 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
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PRF136
PRF136
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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LR301
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices L2721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE
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L2721
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE
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L2711
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l9651
Abstract: MO-166 sy 166
Text: L9651 SMART QUAD SWITCH • Modified VDMOS Power Stage UDSBR > 80V ■ RDSON < 500 mOhm (Tj = 25°C) ■ CMOS Compatible Inputs Enable Input (Reset) Outputs Capable of up to 2.2 Amperes Outputs Internally Clamped at 70V for Fast Inductive Load Switch Off
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L9651
PowerSO-20
500kHz
l9651
MO-166
sy 166
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices SQ742 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE
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SQ742
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices L8721P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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L8721P
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE
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LB401
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P123
Abstract: No abstract text available
Text: polyfet rf devices P123 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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blv730
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET "Power MOSFET" POWER MOSFET 400V power mosfet
Text: BLV730 N-channel Enhancement Mode Power MOSFET • 抗雪崩冲击能力强 BVDSS 400V • 高速开关 RDS ON 1.0Ω Ω • 驱动简单 ID 5.5A 产品介绍 BLV730 是上海贝岭采用目前先进的工艺和设计技术， 自行开发的 400V 5.5A N 沟 VDMOS， 适合于各类高
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BLV730
250uA
blv730
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
"Power MOSFET"
POWER MOSFET
400V power mosfet
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L2701
Abstract: No abstract text available
Text: polyfet rf devices L2701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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L2701
L2701
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mosfet 40a 200v
Abstract: BLV40N20 MOSFET 200v 20A n.channel 1160a
Text: BLV40N20 Preliminary SEP. 2009 N-channel Enhancement Mode Power MOSFET • 低导通电阻 BVDSS 200V • 低反向传输电容 RDS ON 50mΩ Ω • 驱动简单 ID 40A 产品介绍 200V 40A 大功率 VDMOS 器件，导通电阻小驱动简单，适合 PDP 驱动电路使用
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BLV40N20
250uA
mosfet 40a 200v
BLV40N20
MOSFET 200v 20A n.channel
1160a
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LB421
Abstract: LDMOS
Text: polyfet rf devices LB421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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LB421
LB421
LDMOS
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lb501
Abstract: No abstract text available
Text: polyfet rf devices LB501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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LB501
LB501
800mA
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BLV108
Abstract: MOSFET
Text: BLV108 N 沟纵向 MOSFET 描述: 描述: N 沟增强型 VDMOS，高速开关，无二次击穿 产品应用： 电话机电路 继电器电路 驱动电路等 工作条件 T=25℃ (T=25℃ 符号 参数 极限值 单位 VDSS 漏源电压 200 V VGSS 栅源电压
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BLV108
100mA
25VVGS
250mA
BLV108
MOSFET
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SD723
Abstract: VDMOS
Text: polyfet rf devices SD723 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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SD723
SD723
VDMOS
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optical switch 2x1
Abstract: cd photo diode ocm240 Photo MOS Relay OCM200 OCM201 OCM220 OCM221 OCM241 201 photo
Text: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS
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10-mA
L72454D
01ciDS4
b724E40
00nQ5S
optical switch 2x1
cd photo diode
ocm240
Photo MOS Relay
OCM200
OCM201
OCM220
OCM221
OCM241
201 photo
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5B4 IR
Abstract: oki Photo MOS Relay OCM110 OCM111 OCM120 OCM121 0CM110
Text: O K I electronic components OCM 1X0, 1X1 S E R IE S Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM 1XI Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS
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10-mA
b7242HD
5B4 IR
oki Photo MOS Relay
OCM110
OCM111
OCM120
OCM121
0CM110
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bi-directional switches FET
Abstract: til 431 ocm240 OCM200 OCM201 OCM220 OCM221 OCM241
Text: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay G EN ER A L D E S C R IP T IO N The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS
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10-mA
L72454D
01ciDS4
b724E40
bi-directional switches FET
til 431
ocm240
OCM200
OCM201
OCM220
OCM221
OCM241
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