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    TRANSISTOR SC59 MARKING Search Results

    TRANSISTOR SC59 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SC59 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCP55

    Abstract: BCX55 PBSS4160K PBSS5160K SC59
    Text: PBSS4160K 60 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 29 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN low VCEsat (BISS) transistor in a SOT346 (SC59) plastic package. PNP complement: PBSS5160K. 1.2 Features •


    Original     		PDF PBSS4160K OT346 PBSS5160K. BCP55 BCX55. BCX55 PBSS4160K PBSS5160K SC59

    Untitled

    Abstract: No abstract text available
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -100 V 1.8 W -0.36 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR316P PG-SC59 L6327

    marking LC

    Abstract: SC-59 marking 08 infineon
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -100 V 1.8 W -0.36 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR316P PG-SC59 L6327 marking LC SC-59 marking 08 infineon

    GS28

    Abstract: No abstract text available
    Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features -250 V 11 Ω -0.14 A VDS • P-Channel RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR92P PG-SC59 L6327 GS28

    Untitled

    Abstract: No abstract text available
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features V DS • P-Channel -100 V 1.8 Ω -0.36 A R DS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant PG-SC59 • Footprint compatible to SOT23


    Original     		PDF BSR316P PG-SC59 L6327

    Untitled

    Abstract: No abstract text available
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -100 V 1.8 W -0.36 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR316P PG-SC59 L6327

    BSR92P

    Abstract: No abstract text available
    Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -250 V 11 W -0.14 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR92P PG-SC59 L6327 BSR92P

    Untitled

    Abstract: No abstract text available
    Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features -250 V 11 Ω -0.14 A VDS • P-Channel RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR92P PG-SC59 L6327

    Untitled

    Abstract: No abstract text available
    Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features V DS • P-Channel -250 V 11 Ω -0.14 A R DS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant PG-SC59 • Footprint compatible to SOT23


    Original     		PDF BSR92P PG-SC59 L6327

    BSR316P

    Abstract: L6327
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features V DS • P-Channel -100 V 1.8 Ω -0.36 A R DS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant PG-SC59 • Footprint compatible to SOT23


    Original     		PDF BSR316P PG-SC59 L6327 BSR316P L6327

    BSR92P

    Abstract: d014 JESD22-A114 L6327
    Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features V DS • P-Channel -250 V 11 Ω -0.14 A R DS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant PG-SC59 • Footprint compatible to SOT23


    Original     		PDF BSR92P PG-SC59 L6327 BSR92P d014 JESD22-A114 L6327

    BSR606N

    Abstract: BSR606N H6327
    Text: BSR606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SC59


    Original     		PDF BSR606N PG-SC59 H6327: BSR606N BSR606N H6327

    D036

    Abstract: No abstract text available
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features V DS • P-Channel R DS on ,max • Enhancement mode / Logic level ID -100 V 1.8 Ω -0.36 A • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant PG-SC59 • Footprint compatible to SOT23


    Original     		PDF BSR316P PG-SC59 L6327 D036

    WK2 94V0

    Abstract: transistor wu1 94v0 wk2 wk1 sot-23 wk2 sot 23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector Collector to DC Current Gain Emitter Current Marking Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Equivalent Gain Outline


    Original     		PDF CHDTA114TMPT CHDTA115TMPT CHDTA124TMPT CHDTA143TMPT CHDTA144TMPT CHDTA114TEPT CHDTA115TEPT CHDTA124TEPT CHDTA143TEPT CHDTA144TEPT WK2 94V0 transistor wu1 94v0 wk2 wk1 sot-23 wk2 sot 23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1

    2SB772P

    Abstract: SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA -500 -200 -150 -150 -150 -500 -200 -150 -150 -150 -500 -200 -600 -100 -100 -100 -600 -200 -600


    Original     		PDF SC-62 2SB772P SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E

    2SD882P

    Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200


    Original     		PDF SC-62 2SD882P ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23

    k1647

    Abstract: TRANSISTOR W 59 transistor F13 70 SC-59 DIODE S4 75a transistor F13 S4 75A transistor F13 10
    Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC, INVERTERS, DRIVERS, SWITCHING CIRCUITS


    Original     		PDF MUN2111 MUN2112 MUN2113 DTA114EKA DTA124EKA DTA144EKA SC-75A, SC-70, SC-59 SC-75A k1647 TRANSISTOR W 59 transistor F13 70 SC-59 DIODE S4 75a transistor F13 S4 75A transistor F13 10

    SC-59

    Abstract: k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522 MUN2211
    Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA


    Original     		PDF MUN2211 MUN2212 MUN2213 DTC114EKA DTC124EKA DTC144EKA SC-75A, SC-70, SC-59 SC-75A SC-59 k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522

    k2647

    Abstract: SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27
    Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA


    Original     		PDF MUN2211 MUN2212 MUN2213 DTC114EKA DTC124EKA DTC144EKA SC-75A, SC-70, SC-59 SC-75A k2647 SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27

    2PD601A

    Abstract: No abstract text available
    Text: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59


    OCR Scan     		PDF 711002b 2PB709; 2PB709A 2PD601 2PD601A -SC59 2PB709Q: 2PB709R: 2PB709S: 2PB709AQ:

    transistor 2061

    Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
    Text: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59


    OCR Scan     		PDF 711Dfl5b 0D7GQ24 2PD602; 2PD602A 2PB710 2PB710A 2PD602Q: 2PD602R: 2PD602S: 2PD602AQ: transistor 2061 2PD602S 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R

    2PB710R

    Abstract: 2PB710S transistor t05 2PB710AR 2PB710Q 2PB710 2PB710A 2PB710AQ 2PB710AS 2PD602
    Text: Philips Semiconductors Ml 7 1 1 Qö c?b GOVODlfl 357 H P H IN PNP general purpose transistor FEATURES Objective specification 2PB710; 2PB710A PIN CONFIGURATION • Large collector current • Low collector-emitter saturation voltage. c DESCRIPTION <> PNP transistor in a plastic SC59


    OCR Scan     		PDF 2PB710; 2PB710A 2PD602 2PD602A 2PB710Q: 2PB710R: 2PB710S: 2PB710AQ: 2PB710AR: 2PB710AS: 2PB710R 2PB710S transistor t05 2PB710AR 2PB710Q 2PB710 2PB710A 2PB710AQ 2PB710AS

    2PD601R

    Abstract: 2PD601A 2PD601S 2PB709A 2PD601Q marking YQ transistor sc59 marking 2PB709 2PD601 2PD601AQ
    Text: Philips Semiconductors Product specification NPN general purpose transistors 2PD601; 2PD601A FEATURES • High DC current gain • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general amplification. DESCRIPTION NPN transistor in a plastic SC59


    OCR Scan     		PDF 2PD601; 2PD601A 2PB709 2PB709A 2PD601Q 2PD601R 2PD601S 2PD601AQ 2PD601AR 2PD601AS 2PD601A marking YQ transistor sc59 marking 2PD601

    sc59

    Abstract: BH ar transistor 2PB709R 2PB709S 2PD601A lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q
    Text: Philips Semiconductors H 7 1 1 0 fi2 b 0 G7 D0 1 S b 4 fi IH P H IN PNP general purpose transistor FEATURES Objective specification 2PB709; 2PB709A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. & DESCRIPTION a PNP transistor in a plastic SC59


    OCR Scan     		PDF 0G70D15 2PB709; 2PB709A 2PD601 2PD601A MSA314 2PB709Q: 2PB709R: 2PB709S: 2PB709AQ: sc59 BH ar transistor 2PB709R 2PB709S lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q