Untitled
Abstract: No abstract text available
Text: TLP291 SE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291(SE Power Supplies Programmable Controllers Hybrid ICs Unit: mm TLP291(SE consists of photo transistor optically coupled to a gallium arsenide infrared emitting diode. TLP291(SE is housed in the SO4 package, very small and thin coupler.
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TLP291
3750Vrms)
11-3C1
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BUK552
Abstract: BUK552-60A BUK552-60B T0220AB 42e0 TSLA
Text: PHILIPS INTERNATIONAL b SE ]> B 7110fiSb 00b421b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK552-60A/B
T0220AB
BUK552
BUK552-60A
BUK552-60B
T0220AB
42e0
TSLA
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PDF
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DIODE T25 4 EO
Abstract: B44 transistor 711002b BUK456-60H T0220AB PHILIPS fw 373
Text: fc,SE i> PHILIPS INTERNATIONAL m 711Qfl2b QObMlll b4H « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK456-60H
T0220AB
DIODE T25 4 EO
B44 transistor
BUK456-60H
T0220AB
PHILIPS fw 373
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se
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XN04390
UNR212X
UN212X)
UNR2223
UN2223)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR M ODULES QM30TB-2H MEDIUM POW ER SWITCHING U SE INSULATED TYPE • Ic • Vcex Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75 • hFE • Insulated Type
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QM30TB-2H
E80276
E80271
C-600V
4571CH
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PDF
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2N3441
Abstract: transistor 7150 booc power transistors 7150 Transistor
Text: 2N3441 NPN Power transistor for AF amplifiers and switching applications 2 N 3 4 4 1 is a sin g le -d iffu se d N P N silic o n transistor in a T O - 6 6 case. T h e collector is electrically co n n e c te d to the case. T h e transistor 2 N 3 4 4 1 is particularly suitable for
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2N3441
Q62702-D
Q62902-B
Q62902-B11-B
2N3441
transistor 7150
booc power transistors
7150 Transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: j SAM SUNG SE M IC O N D U C T O R INC MPSL01 14E D | 7 ^ 1 4 3 00073^0 â J 'T NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em lttsr V ilta fl« : Vcio=120V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSL01
625mW
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PDF
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philips ID 27
Abstract: hjb surface mount 100-P BUK482-60A
Text: PHILIPS INTERNATIONAL b SE T> • ?HDa2b DObmt.3 Philips Semiconductors N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device Is intended for use in automotive and general purpose
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OCR Scan
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BUK482-60A
OT223
711DfiSb
OT223.
35\im
philips ID 27
hjb surface mount
100-P
BUK482-60A
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PDF
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WS300
Abstract: No abstract text available
Text: KSE44H SERIES NPN EPITAXIAL SILICON TRANSISTOR GEN ERAL PU RPO SE POW ER APPLICATION AND SW ITCHING • Low Collector-Emitter Saturation Votage : VCE sat = 1V (MAX) @ 8 A • Fast Switching Speeds ABSO LUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage
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KSE44H
WS300
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PDF
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tpq2907
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays
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05G433Ã
14-pin
TPQ7051
TPQ6700
TPQ6600A
TPQ6600
TPQ6502
2N3904
2N3906
tpq2907
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PDF
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Untitled
Abstract: No abstract text available
Text: Contran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 63 CONTACT METALLIZATION B a se and emitter: > 50.000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)
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203mm)
350pF
350pF
2N5312,
2N5318,
2N5677,
2N5744,
2N5742,
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PDF
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539 MOTOROLA transistor
Abstract: LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460
Text: 12E 0 I b3b72S4 aoa?24S T | M OTGRCLA SC MOTOROLA T - U -X I XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA LT4700 The RF Line N P N Silicon High Frequency Transistor 1C = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . designed primarily for use in low noise, small-signal amplifiers in satellite down con
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b3b72S4
LT4700
539 MOTOROLA transistor
LT4700
transistor rf m 2528
Transistor motorola 513
552 transistor motorola
52604 MOTOROLA
03460
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUB4114 PU4114 Silicon NPN triple diffusion planar type For power amplification and switching Complementary to PUB4214 (PU4214) Unit: mm • Features 25.3±0.2 4.0±0.2 0.8±0.25 0.5±0.15 1.0±0.25 di p Pl lan nclu ea e se pla m d m des
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PUB4114
PU4114)
PUB4214
PU4214)
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PDF
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Untitled
Abstract: No abstract text available
Text: * FAIRCHII.D SE M IC O N D U C TO R February 1997 i NDH833N N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancement mode power field • 7.1 A, 20 V. effect transistors are produced using Fairchild's proprietary,
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NDH833N
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PDF
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pa 2030a
Abstract: 2SC4520 QGQ711G K 2038
Text: SANYO SE MI COND UC TO R CORP 2SC4520 7*H707b Q0Q711G 1 22E D T ~ 3 5 ~ n % NPN Epitaxial Planar Silicon Transistor 2038 High-Speed Switching Applications 3I39 F ea tu res . Adoption o f FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage
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n707fe,
QGQ711G
2SC4520
250mm2
pa 2030a
K 2038
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PDF
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2N4036
Abstract: R/ON 4037
Text: FAIRCHILD SE MI CONDUCTOR 3469674 FA IR C H ILD SEMICONDUCTOR ^ FAIRCHILD 84D 2N4036/2N4037 D • r-z? -^ PNP G eneral Purpose Transistor A Schlum berger Com pany PACKAGE 2N4036 2N4037 ABSOLUTE M AXIM UM RATINGS Note 1 Temperatures Storage Tem perature O perating Ju n ctio n Tem perature
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2N4036/2N4037
2N4036
2N4037
2N4037
R/ON 4037
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PDF
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POWERLINE 4 PRO
Abstract: No abstract text available
Text: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4738-2.1 ITS13C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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DS4738-2
ITS13C06
ITS13C06
POWERLINE 4 PRO
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PDF
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bup4
Abstract: No abstract text available
Text: MAE D 6133167 DDDOmfl DD3 SEM EFA BL HIGH POWER DIE w - ^ ~ DIFFUSIO N SEMELAB DIFFUSED B Y SE M E F A B ISMLB LTD 1 G135 chip family The G 1 3 5 chip family is an NPN bipolar multiepitaxial planar transistor intended for applications requiring fast switching, low saturation, high power
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EmitMJ14000
BUP49
BUP52
BUV61
BUS51
BUR51
BUP54
BUT92A
BUP51
G935A
bup4
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PDF
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Untitled
Abstract: No abstract text available
Text: m 2N1487 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N1487 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS V lc 6.0 A Ib 3.0 A ce SE A T N G PLAN t 40 V P diss 75 W @ Tc = 25 °C Tj -65 °C to +200 °C
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2N1487
2N1487
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PDF
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siemens 230 98 O
Abstract: siemens 230 siemens EC 230 98 siemens 230 98 a1105 T-39-13
Text: 47E D 053SbOS 0051755 7 B I S I E G SBEMENS SIEMENS AKTIENGE SE LLS CH AF 7 ^ 3 9 - 0 BUZ 230 SIPMOS Power MOS Transistor Vos /„ •O S o n = 1000 V = 5.5 A = 2.0 fi • N channel • FREDFET • Enhancement mode • Package: TO-204AA (TO -3)1) Type
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E35b05
O-204AA
C67078-A1105-A2
T-39-13
siujq740
Q0217bl
SIL00742
siemens 230 98 O
siemens 230
siemens EC 230 98
siemens 230 98
a1105
T-39-13
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor 0.2±0.05 4 1 2 5° 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo
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XP0611FH
XP611FH)
UNR111F
UN111F)
UNR111H
UN111H)
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PDF
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2SA850
Abstract: TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933
Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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175MHz,
100Hz,
iTc-25
2SA850
TRANSISTOR 2SA850
1729H
2SC1721
2SA854
2SA933
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PDF
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vno300m
Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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OCR Scan
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100kQ
500MIh,
200MHz)
2SA103I5
vno300m
2SC2382
epa 2391
2SA103
THB 6 2411
175mhz 12.5v 40w
te 2395
138B
138D
2SA1028
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PDF
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616A TRANSISTOR
Abstract: 2sD586A 2SD736A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a
Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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OCR Scan
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2SD586A
2SD736A
2SD738A
2SD743A
2SD968A
616A TRANSISTOR
2sD586A
transistor 669A
transistor 669A 649A
2SD674A
2SD738
2Sd824A
2SD877
616a
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PDF
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