10j312
Abstract: GT10J312 marking code SM diode
Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)
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GT10J312
GT10J312,
10j312
marking code SM diode
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GT10J312
Abstract: No abstract text available
Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312,GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm GT10J312 The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.)
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GT10J312
GT10J312
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GT15J311
Abstract: No abstract text available
Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)
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GT15J311
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Untitled
Abstract: No abstract text available
Text: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TENTATIVE GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 5A)
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GT5J311
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15J311
Abstract: 15J311 EQUIVALENT transistor 15j311 toshiba code igbt GT15J311
Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.) (IC = 15A)
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GT15J311
GT15J311,
15J311
15J311 EQUIVALENT
transistor 15j311
toshiba code igbt
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GT5J311
Abstract: General Semiconductor SM
Text: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TENTATIVE GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 5A)
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GT5J311
General Semiconductor SM
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10j312
Abstract: GENERAL SEMICONDUCTOR MARKING SM
Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.)
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GT10J312
GT10J312,
10j312
GENERAL SEMICONDUCTOR MARKING SM
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GT25G102
Abstract: No abstract text available
Text: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G102
2-10S2C
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B1667
Abstract: 2SB1667 W301
Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics
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2SB1667
B1667
W301
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2SD2414
Abstract: No abstract text available
Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics
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2SD2414
2-10S2
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2SD2414
Abstract: D2414
Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics
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2SD2414
2-10S2
D2414
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2SD2414
Abstract: D2414
Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics
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2SD2414
2-10S2
D2414
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GT20G102
Abstract: No abstract text available
Text: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
2-10S2C
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GT25G101
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
2-10S2C
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Untitled
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
10S2C
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GT20G101
Abstract: No abstract text available
Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G101
2-10S2C
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SM-8 BIPOLAR TRANSISTOR
Abstract: 4420 Transistor TP4030 ZHB6792 500mA H-bridge
Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792
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ZHB6792
OT223)
SM-8 BIPOLAR TRANSISTOR
4420 Transistor
TP4030
ZHB6792
500mA H-bridge
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h6718
Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718
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ZHB6718
OT223)
h6718
bf 494 transistor
ZHB6718
ZHB6718 TYPICAL APPLICATION
12 mje t 5029
DSA003727
SM-8 BIPOLAR TRANSISTOR
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GT25G102
Abstract: No abstract text available
Text: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G102
2-10S2C
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1117 S Transistor
Abstract: No abstract text available
Text: GT10J312,GT10J312 SM TO SHIBA GT10J312, GT10J312(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode High Speed
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OCR Scan
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GT10J312
GT10J312,
GT10J312
30//s
1117 S Transistor
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GT5J311
Abstract: No abstract text available
Text: GT5J311 ,GT5J311 SM TO SHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J311, GT5J311(SM) HIGH POWER SWITCHING APPLICATIONS Unit in mm GT5J311 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode High Speed
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GT5J311
GT5J311,
GT5J311
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BUK436
Abstract: BUK436-200B 200B iran BUK436-200A
Text: Philips Components BUK436-200A BUK436-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Pow er Supplies SM PS , motor control, welding,
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BUK436-200A
BUK436-200B
BUK436
-200A
-200B
OT-93;
M89-1144/RST
BUK436-200B
200B
iran
BUK436-200A
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GT15J311
Abstract: No abstract text available
Text: GT15J311,GT15J311 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT15J311 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode High Speed : tf=0.30,«s (Max.) (l£ = 15A)
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GT15J311
GT15J311,
GT15J311
100a/jus
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT15J311,G T15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT15J311 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed
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GT15J311
T15J311
GT15J311,
GT15J311
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