TRANSISTOR SMD CODE 15
Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Text: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:
|
Original
|
2SD669XD/2SD669AXD
O-252)
MIL-STD-202G,
2SD669XD
2SD669AXD
TRANSISTOR SMD CODE 15
smd code transistor
transistor smd npn ac
smd transistor code 14
smd transistor 14
transistor smd w
transistor smd wu
SMD Transistor SA
SMD TRANSISTOR
2SD669A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK.
|
Original
|
PHPT610030NK
OT1205
LFPAK56D)
PHPT610030PK.
PHPT610030NPK.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK.
|
Original
|
PHPT610035NK
OT1205
LFPAK56D)
PHPT610030NK.
PHPT610035PK.
PHPT610035NPK.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.
|
Original
|
PHPT610030NPK
OT1205
LFPAK56D)
PHPT610030NK.
PHPT610030PK.
AEC-Q101
|
PDF
|
BFS17
Abstract: BFS17R BFS17W BFS17 E1
Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280
|
Original
|
BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
BFS17 E1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N2 020 D-3 PBSS5330PAS 30 V, 3 A PNP low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
|
Original
|
PBSS5330PAS
DFN2020D-3
OT1061D)
PBSS4330PAS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N2 020 D-3 PBSS4330PAS 30 V, 3 A NPN low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
|
Original
|
PBSS4330PAS
DFN2020D-3
OT1061D)
PBSS5330PAS
|
PDF
|
BFS17
Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
|
Original
|
BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
D-74025
bfs17 Vishay
702 TRANSISTOR sot-23
85038
|
PDF
|
"marking E1"
Abstract: BFS17 BFS17R BFS17W
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
|
Original
|
BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
"marking E1"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
|
Original
|
BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight
|
Original
|
CR50TE-DLF)
DTS1005
|
PDF
|
"marking E1"
Abstract: BFS17R BFS17 d 1556 transistor
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1
|
Original
|
BFS17/BFS17R
BFS17
BFS17R
D-74025
16-Oct-97
"marking E1"
d 1556 transistor
|
PDF
|
transistor SMD s72
Abstract: S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 PIN COFIGURATION G= GATE S= SOURCE SOT-23 Formed SMD Package D= DRAIN Marking 2N7002=S72 Designed for High Speed Pulse Amplifier and Drive Application
|
Original
|
2N7002
OT-23
2N7002
C-120
2N7002Rev021104E
transistor SMD s72
S72 SMD
smd s72
smd transistor s72
smd transistor marking S72
smd marking S72
SmD s72 2N7002
transistor marking s72
2N7002 S72 SOT-23
2N7002 SOT-23
|
PDF
|
BFS17
Abstract: transistor BFs 18 BFS17R marking E1
Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
|
Original
|
BFS17
BFS17R
D-74025
transistor BFs 18
marking E1
|
PDF
|
|
|
BUZ111SL
Abstract: Q67040-S4003-A2 SPP80N05
Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
|
Original
|
BUZ111SL
SPP80N05L
O-220
Q67040-S4003-A2
28/Jan/1998
BUZ111SL
Q67040-S4003-A2
SPP80N05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
|
OCR Scan
|
bh53131
00E3T77
BST120
|
PDF
|
6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol
|
OCR Scan
|
BUZ22SMD
q67042-s4139
DsJ14
6 pin TRANSISTOR SMD CODE PA
BUZ22
smd code buz
smd rgs
BUZ22 SMD
BUZ22SMD
Diode smd code sm
PH smd transistor PH
smd transistor A7J
TRANSISTOR SMD XD
|
PDF
|
BST122
Abstract: No abstract text available
Text: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.
|
OCR Scan
|
BST122
hhS3131
BST122
|
PDF
|
transistor SMD MARKING CODE HF
Abstract: smd code HF transistor
Text: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.
|
OCR Scan
|
bbS3T31
0DE470fl
BF824
OT-23
bb53131
0DEM711
7Z72155
7Z72159
D024712
transistor SMD MARKING CODE HF
smd code HF transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed
|
OCR Scan
|
bL53T31
0025b57
BST86
0D35bbD
BST86
|
PDF
|
transistor smd MJ 145
Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter
|
OCR Scan
|
q67042-s4131
np-60
transistor smd MJ 145
d 132 smd code diode
d 132 smd diode
qd SMD
SMD TRANSISTOR qd
BUZ31
smd rgs
smd diode 145
|
PDF
|
k22 sot23
Abstract: semiconductor date Code smd-transistor
Text: Labeling Specification LABEL SPECS 167 Labeling Specification Central Semiconductor Corp. www.centralsemi.com CENTRAL - ® - 1.0 Purpose: Sem iconductor Devices C M K T 2 2 2 2 A TR ITEM. SMD-TRANSISTOR D E S C R IP T IO N . ®"pr ~ Discrete CUSTOMER ITEM.
|
OCR Scan
|
M96286
k22 sot23
semiconductor date Code
smd-transistor
|
PDF
|
smd code HF transistor
Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.
|
OCR Scan
|
71IDflgb
BLU86
OT223
OT223
smd code HF transistor
TRANSISTOR SMD MARKING CODE KF
transistor SMD t30
SMD Transistor t30
TRANSISTOR SMD MARKING CODE 5b
TRANSISTOR SMD MARKING CODE LK
TRANSISTOR SMD MARKING CODE XI
smd transistor marking K7
transistor SMD MARKING CODE HF
smd transistor marking L6 NPN
|
PDF
|
buz102
Abstract: No abstract text available
Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on
|
OCR Scan
|
O-220
BUZ102
C67078-S1351-A2
fl23Sb05
023Sfc
35bQ5
00fl45b
buz102
|
PDF
|
