Untitled
Abstract: No abstract text available
Text: PZT3906 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA
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PZT3906
OT-223)
25rom
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS on 1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m MAX. (VGS = -10 V, ID = -3 A)
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KPA2790GR
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type MOS Field Effect Transistor KPA1793 Features Low on-state resistance N-channel RDS on 1 = 69 m MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) P-channel RDS(on)1 = 115 m
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KPA1793
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SMD 3B
Abstract: smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor
Text: IC IC SMD Type Silicon P, N Channel MOS Type Transistor KPCF8402 Features Low drain-source ON resistance : P Channel RDS ON = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.)
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KPCF8402
SMD 3B
smd Transistor 1116
transistor smd 2b
SMD SINGLE GATE
KPCF8402
3b smd transistor
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TRANSISTOR SMD MARKING CODE a9
Abstract: TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE MARKING CODE SMD IC transistor smd marking LE MARKING CODE V6 SMD TRANSISTOR MARKING code TJ smd transistor m90 MARKING SMD IC CODE V6 marking code
Text: Philips Components BFG33 BFG33X NPN 12 GHz WIDEBAND TRANSISTOR BFG33 is an npn transistor in a m icrom iniature SOT143 envelope w ith double em itter bonding. The device contains a BFQ33 crystal and is fo r use in circuits using SMD technology. Features • Extremely high transition frequency
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BFG33
BFG33X
BFG33
OT143
BFQ33
is2212)
7Z89163-1
BFG33X
TRANSISTOR SMD MARKING CODE a9
TRANSISTOR SMD MARKING CODE
K TRANSISTOR SMD MARKING CODE
MARKING CODE SMD IC
transistor smd marking LE
MARKING CODE V6
SMD TRANSISTOR MARKING code TJ
smd transistor m90
MARKING SMD IC CODE
V6 marking code
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BST122
Abstract: No abstract text available
Text: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.
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BST122
hhS3131
BST122
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ciss
Abstract: 2SK2414
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2414 Features TO-252 Low On-Resistance MAX. @ VGS = 10 V, ID = 5.0 A RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 5.0 A) +0.15 1.50-0.15 RDS(on)1 = 70 m +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8
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2SK2414
O-252
ciss
2SK2414
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H6N03LA
Abstract: H6N03 PG-TO252-3-11 to251 IPDH6N03LA H6N03L
Text: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID
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IPDH6N03LA
IPSH6N03LA
IPFH6N03LA
IPUH6N03LA
PG-TO252-3-11
PG-TO252-3-23
H6N03LA
H6N03
PG-TO252-3-11
to251
H6N03L
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transistor smd P 16
Abstract: smd transistor 68 p KPA1792
Text: IC IC SMD Type MOS Field Effect Transistor KPA1792 Features Low on-state resistance N-channel RDS on 1 = 26 m MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 3.4 A) RDS(on)3 = 42 m MAX. (VGS = 4.0 V, ID = 3.4 A) P-channel RDS(on)1 = 36 m
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KPA1792
transistor smd P 16
smd transistor 68 p
KPA1792
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transistor tt 2222
Abstract: smd 809 x transistor transistor SMD S33
Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures
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0DSfl737
BLT50
OT223
bbS3R31
0DS87M3
transistor tt 2222
smd 809 x transistor
transistor SMD S33
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110N06L
Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature
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IPB110N06L
IPP110N06L
PG-TO263-3-2
P-TO263-3-2
PG-TO220-3-1
110N06L
110N06L
g3pf
DIODE smd marking Ag
PG-TO220-3
PG-TO263-3-2
MARKING G3 INFINEON
SMD diode D94
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IEC61249-2-21
Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L
Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature
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IPB085N06L
IPP085N06L
IEC61249-2-21
P-TO263-3-2
P-TO220-3-1
085N06L
IEC61249-2-21
PG-TO220-3
085N06L
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IEC61249-2-21
Abstract: PG-TO220-3 070N06L
Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature
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IPB070N06L
IPP070N06L
IEC61249-2-21
PG-TO263-3
PG-TO220-3
070N06L
IEC61249-2-21
PG-TO220-3
070N06L
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085N06L
Abstract: IPB085N06L IPB085N06L G PG-TO220-3 smd marking g23
Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature
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IPB085N06L
IPP085N06L
P-TO263-3-2
P-TO220-3-1
085N06L
085N06L
IPB085N06L G
PG-TO220-3
smd marking g23
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PG-TO220-3
Abstract: PG-TO263-3-2 IEC61249-2-21 IPP110N06L G 110N06L
Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature
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IPB110N06L
IPP110N06L
IEC61249-2-21
PG-TO263-3-2
P-TO263-3-2
PG-TO220-3-1
110N06L
PG-TO220-3
PG-TO263-3-2
IEC61249-2-21
IPP110N06L G
110N06L
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Untitled
Abstract: No abstract text available
Text: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA
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b53T31
BLT80
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M-Typ
Abstract: KPA1816 5000mm2
Text: IC IC SMD Type MOS Field Effect Transistor KPA1816 TSSOP-8 Features Unit: mm 1.8V drive available Low on-state resistance RDS on 1 = 15 m TYP. (VGS = -4.5 V, ID = -4.5 A) RDS(on)2 = 16 m TYP. (VGS = -4.0 V, ID = -4.5 A) RDS(on)3 = 22.5 m TYP. (VGS = -2.5 V, ID = -4.5 A)
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KPA1816
M-Typ
KPA1816
5000mm2
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KPA1764
Abstract: TRANSISTOR x11
Text: IC IC SMD Type MOS Field Effect Transistor KPA1764 Features Dual chip type Low on-state resistance RDS on 1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A) 1 : Source 1 2 : Gate 1
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KPA1764
KPA1764
TRANSISTOR x11
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ic smd 851
Abstract: KPA1890 transistor P 24 smd
Text: IC IC SMD Type MOS Field Effect Transistor KPA1890 TSSOP-8 Features Unit: mm Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS on 1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 m
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KPA1890
ic smd 851
KPA1890
transistor P 24 smd
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type MOS Field Effect Transistor KPA1873 TSSOP-8 Features Unit: mm 2.5 V drive available Low on-state resistance RDS on 1 = 23 m TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 24 m TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 28 m TYP. (VGS = 3.1 V, ID = 3.0 A)
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KPA1873
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A1723
Abstract: smd transistor 26 KPA1716 40A19
Text: IC IC SMD Type MOS Field Effect Transistor KPA1716 Features Low on-state resistance RDS on 1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP.
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KPA1716
Powe20V,
A1723
smd transistor 26
KPA1716
40A19
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smd TRANSISTOR 05c sot23
Abstract: transistor smd marking NA sot-23 smd diode marking 77 CMBT8050 smd transistor marking n 3 package 23 smd transistor 3K
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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ISO/TS16949
CMBT8050
OT-23
C-120
CMBT8050Rev
240502E
smd TRANSISTOR 05c sot23
transistor smd marking NA sot-23
smd diode marking 77
CMBT8050
smd transistor marking n 3 package 23
smd transistor 3K
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3N0607
Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
Text: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1
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IPI80N06S3-07
IPP80N06S3-07
IPB80N06S3-07
IPP80N06S3-07
3N0607
BIPP80N06S3-07,
3N0607
ANPS071E
IPB80N06S3-07
IPI80N06S3-07
DIODE 7387
smd diode code 102a
c4 09 smd marking code
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PN0807
Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
Text: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS=Power-Transistor Feature N-Channel Product Summary Enhancement mode VDS 75 V 175°C operating temperature RDS on max. SMD version 6.8 m Avalanche rated ID 100 A dv/dt rated P-TO263-3-2 Type
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SPP100N08S2-07
SPB100N08S2-07
P-TO263-3-2
P-TO220-3-1
Q67060-S6044
PN0807
P-TO263-3-2
Q67060-S6046
P-TO220-3-1
PN0807
SPB100N08S2-07
SPP100N08S2-07
smd diode UM 07
BSPB100N08S2-07
66a smd
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