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    TRANSISTOR SMD M 6 Search Results

    TRANSISTOR SMD M 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD M 6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS on 1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m MAX. (VGS = -10 V, ID = -3 A)


    Original     		PDF KPA2790GR

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type MOS Field Effect Transistor KPA1793 Features Low on-state resistance N-channel RDS on 1 = 69 m MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) P-channel RDS(on)1 = 115 m


    Original     		PDF KPA1793

    Untitled

    Abstract: No abstract text available
    Text: BCU86-SMD BCU87-SMD MECHANICAL DATA Dimensions in mm NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 FEATURES 2 .5 1 .0 4 .2 5 m a x . Ideal For High current Switching Application • LOW VCE SAT 0 .4 0 0 .4 0 • HIGH CURRENT CAPACITY AND WIDE ASO


    Original     		PDF BCU86-SMD BCU87-SMD BCU86 BCU87 100mA

    fast switching pnp transistor 3A 60V

    Abstract: magnatec 1455 BCU86 BCU86-SMD BCU87 BCU87-SMD
    Text: BCU86-SMD BCU87-SMD MECHANICAL DATA Dimensions in mm NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 FEATURES 2 .5 1 .0 4 .2 5 m a x . Ideal For High current Switching Application • LOW VCE SAT 0 .4 0 0 .4 0 • HIGH CURRENT CAPACITY AND WIDE ASO


    Original     		PDF BCU86-SMD BCU87-SMD BCU86 BCU87 fast switching pnp transistor 3A 60V magnatec 1455 BCU86 BCU86-SMD BCU87 BCU87-SMD

    SMD 3B

    Abstract: smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor
    Text: IC IC SMD Type Silicon P, N Channel MOS Type Transistor KPCF8402 Features Low drain-source ON resistance : P Channel RDS ON = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.)


    Original     		PDF KPCF8402 SMD 3B smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor

    smd 2N3906

    Abstract: 2N3904 TRANSISTOR SMD 2N3906 SMD
    Text: General Purpose Transistor SMD Diodes Specialist 2N3906-G PNP RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 )


    Original     		PDF 2N3906-G 2N3904-G OT-23 MMBT3906-G. 200uA QW-BTR05 smd 2N3906 2N3904 TRANSISTOR SMD 2N3906 SMD

    ciss

    Abstract: 2SK2414
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2414 Features TO-252 Low On-Resistance MAX. @ VGS = 10 V, ID = 5.0 A RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 5.0 A) +0.15 1.50-0.15 RDS(on)1 = 70 m +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8


    Original     		PDF 2SK2414 O-252 ciss 2SK2414

    070N06L

    Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		PDF IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A

    H6N03LA

    Abstract: H6N03 PG-TO252-3-11 to251 IPDH6N03LA H6N03L
    Text: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID


    Original     		PDF IPDH6N03LA IPSH6N03LA IPFH6N03LA IPUH6N03LA PG-TO252-3-11 PG-TO252-3-23 H6N03LA H6N03 PG-TO252-3-11 to251 H6N03L

    h6n03la

    Abstract: H6N03 A5082 Q67045-A5082 H6N03L Q67045-A5065 IPDH6N03LA PG-TO252-3-11
    Text: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID


    Original     		PDF IPDH6N03LA IPSH6N03LA IPFH6N03LA IPUH6N03LA PG-TO252-3-11 PG-TO252-3-23 h6n03la H6N03 A5082 Q67045-A5082 H6N03L Q67045-A5065 PG-TO252-3-11

    085N06L

    Abstract: IPB085N06L smd marking g23 PG-TO220-3 marking g23 SMD
    Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 8.2 m: 80 A • 175 °C operating temperature


    Original     		PDF IPB085N06L IPP085N06L PG-TO263-3 P-TO262 PG-TO220-3 085N06L 085N06L smd marking g23 PG-TO220-3 marking g23 SMD

    110N06L

    Abstract: smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N IPP110N06L diode smd 312
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 11 m: 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3 P-TO26 PG-TO220-3 110N06L 110N06L smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N diode smd 312

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID


    Original     		PDF IPDH6N03LA IPSH6N03LA IPFH6N03LA IPUH6N03LA PG-TO252-3-11 PG-TO252-3-23

    H6N03LA

    Abstract: IPDH6N03LA H6N03L H6N03 PG-TO252-3-11 IPDH6N03LA G
    Text: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID


    Original     		PDF IPDH6N03LA IPSH6N03LA IPFH6N03LA IPUH6N03LA PG-TO252-3-11 PG-TO252-3-23 H6N03LA H6N03L H6N03 PG-TO252-3-11 IPDH6N03LA G

    110N06L

    Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L 110N06L g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94

    IEC61249-2-21

    Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L
    Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature


    Original     		PDF IPB085N06L IPP085N06L IEC61249-2-21 P-TO263-3-2 P-TO220-3-1 085N06L IEC61249-2-21 PG-TO220-3 085N06L

    TRANSISTOR SMD CODE B7

    Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
    Text: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.


    OCR Scan     		PDF PMBT3906 PMBT3906 TRANSISTOR SMD CODE B7 TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: PZT3906 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA


    OCR Scan     		PDF PZT3906 OT-223) 25rom

    Untitled

    Abstract: No abstract text available
    Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum ’\ .* y 7 M 7 x ^ :ÿyyx$-c±miBi • Features 1. Developed as a chip type SMD phot-transistor for both reverse and top surface mounting 2. Small and square size, dim ensions : 3 ,2 L x 1.6(W)X1,1 (H)mm 2. ^- -Î;ïl3;3.e(L)xl.6(W)xl.i(H)


    OCR Scan     		PDF CPT-S30' 950nmlRftLcfc CL-200IR

    TRANSISTOR SMD MARKING CODE a9

    Abstract: TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE MARKING CODE SMD IC transistor smd marking LE MARKING CODE V6 SMD TRANSISTOR MARKING code TJ smd transistor m90 MARKING SMD IC CODE V6 marking code
    Text: Philips Components BFG33 BFG33X NPN 12 GHz WIDEBAND TRANSISTOR BFG33 is an npn transistor in a m icrom iniature SOT143 envelope w ith double em itter bonding. The device contains a BFQ33 crystal and is fo r use in circuits using SMD technology. Features • Extremely high transition frequency


    OCR Scan     		PDF BFG33 BFG33X BFG33 OT143 BFQ33 is2212) 7Z89163-1 BFG33X TRANSISTOR SMD MARKING CODE a9 TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE MARKING CODE SMD IC transistor smd marking LE MARKING CODE V6 SMD TRANSISTOR MARKING code TJ smd transistor m90 MARKING SMD IC CODE V6 marking code

    BST122

    Abstract: No abstract text available
    Text: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.


    OCR Scan     		PDF BST122 hhS3131 BST122

    TRANSISTOR SMD MARKING CODE 5b

    Abstract: transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR
    Text: Philips Semiconductors 711Dfl2h DDbTBT? 743 M P H IN Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • QUICK REFERENCE DATA RF performance at Ts < 60 °C In a common emitter class-B test circuit see note 1 . Emitter-ballasting resistors for


    OCR Scan     		PDF 7110fl2tj BLU86 OT223 OT223 TRANSISTOR SMD MARKING CODE 5b transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR

    transistor tt 2222

    Abstract: smd 809 x transistor transistor SMD S33
    Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


    OCR Scan     		PDF 0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33

    Untitled

    Abstract: No abstract text available
    Text: uim 1. ^ymy^^y'Jxs>-c±mR uTmmm^m0 • Features 1. Developed as a chip thpe SMD phot-transistor for both reverse and top surface mounting. 2. ^ffi\ -^IS3.8(L xl.6(W)xl.l(H) 2. Small and square size, dimensions : 3 .2 (L)x 1.6(W)X1.1 (H)mm. m < D / im - n m v '( X o


    OCR Scan     		PDF T-230