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    TRANSISTOR SOT 223 Search Results

    TRANSISTOR SOT 223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2712 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC3325 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2713 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=0.1 A / hFE=200~700 / VCE(sat)=0.3 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC4116 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-323 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT 223 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor

    Abstract: transistor SOT 23 JAPAN transistor MA05C transistor sot NS Package Number MA03B MA03B 223 transistor Supersot 6 SOT-223
    Text: Small Outline Transistor SOT-23, SOT-223, Super-SOT 3 Lead Molded SOT-23, High Profile NS Package Number M03A 2000 National Semiconductor Corporation MS101169 www.national.com Small Outline Transistor (SOT-23, SOT-223, Super-SOT) May 1999 Small Outline Transistor (SOT-23, SOT-223, Super-SOT)


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    OT-23, OT-223, MS101169 transistor transistor SOT 23 JAPAN transistor MA05C transistor sot NS Package Number MA03B MA03B 223 transistor Supersot 6 SOT-223 PDF

    SC06960

    Abstract: JESD97
    Text: 2STN5551 Surface mounting NPN transistor Preliminary Data Features • NPN transistor in SOT-223 surface mounting package ■ Low VCE sat behavior 4 Application ■ 1 Linear amplifier 2 3 SOT-223 Description The device is an NPN transistor manufactured by


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    2STN5551 OT-223 OT-223 SC06960 JESD97 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 SOT-89 DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 SOT-223


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    2SB772S OT-89 2SB772S OT-223 2SD882S 2SB772SL 2SB772S-x-AA3-R 2SB772SL-x-AA3-R 2SB772S-x-AB3-R 2SB772SL-x-AB3-R PDF

    2SB772S

    Abstract: 2SD882S dcdc sot-89 2SB772SL BL SOT223
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 SOT-89 DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 SOT-223


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    2SB772S OT-89 2SB772S OT-223 2SD882S 2SB772SL 2SB772S-x-AA3-R 2SB772SL-x-AA3-R 2SB772S-x-AB3-R 2SB772SL-x-AB3-R 2SD882S dcdc sot-89 2SB772SL BL SOT223 PDF

    SC06960

    Abstract: No abstract text available
    Text: 2STN5551 Surface mounting NPN transistor Features • ■ NPN transistor in SOT-223 surface mounting package 4 Low VCE sat behavior Application ■ 1 Linear amplifier 2 3 SOT-223 Description The device is an NPN transistor manufactured by epitaxial planar technology.


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    2STN5551 OT-223 OT-223 SC06960 PDF

    BSP16T1

    Abstract: SMD310
    Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300


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    BSP16T1 OT-223 318E-04, O-261AA r14525 BSP16T1/D BSP16T1 SMD310 PDF

    BSP16T1

    Abstract: SMD310
    Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300


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    BSP16T1 OT-223 318E-04, O-261AA r14525 BSP16T1/D BSP16T1 SMD310 PDF

    transistor bt2

    Abstract: marking Bt2 marking .Bt2
    Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300


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    OT-223 BSP16T1 318E-04, O-261AA BSP16T1/D transistor bt2 marking Bt2 marking .Bt2 PDF

    marking Bt2

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor Motorola Preferred Device PNP Silicon COLLECTOR 2,4 SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit


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    OT-223 BSP16T1 318E-04, O-261AA marking Bt2 PDF

    Sc59

    Abstract: marking H2A sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 4 MAXIMUM RATINGS 1 Rating Symbol


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    OT-223 BSP16T1 318E-04, O-261AA Sc59 marking H2A sot-23 PDF

    BSP16T1

    Abstract: SMD310 marking Bt2
    Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3


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    BSP16T1/D BSP16T1 OT-223 BSP16T1/D* BSP16T1 SMD310 marking Bt2 PDF

    BSP16T1

    Abstract: SMD310 C200C marking Bt2
    Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3


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    BSP16T1/D BSP16T1 OT-223 318E-Inc. BSP16T1 SMD310 C200C marking Bt2 PDF

    2SB772S

    Abstract: 2SD882S
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 SOT-89 FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772S 1 SOT-223 APPLICATIONS * Audio power amplifier * DC-DC convertor


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    2SD882S OT-89 2SB772S OT-223 2SD882SSL 2SD882S-x-AA3-R 2SD882SL-x-AA3-R 2SD882S-x-AB3-R 2SD882SL-x-AB3-R 2SD882S-x-T92-B 2SB772S 2SD882S PDF

    817a

    Abstract: transistor marking 551 sot-89 STMicroelectronics marking code date sot-89 N817A P025H STF817A 817A RELAY SOT-173 package JESD97 STN817A
    Text: STN817A STF817A PNP MEDIUM POWER TRANSISTOR General features • SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING 2 Description 1 The STF817A - STN817A are PNP transistor manufactured using Planar Technology resulting


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    STN817A STF817A OT-223 OT-89 STF817A STN817A OT-223 817a transistor marking 551 sot-89 STMicroelectronics marking code date sot-89 N817A P025H 817A RELAY SOT-173 package JESD97 PDF

    transistor marking 551 sot-89

    Abstract: 817A RELAY STF817A sot-89 marking ct
    Text: STN817A STF817A PNP MEDIUM POWER TRANSISTOR General features • SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING Description 1 The STF817A - STN817A are PNP transistor manufactured using Planar Technology resulting


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    STN817A STF817A OT-223 OT-89 STF817A OT-223 N817A transistor marking 551 sot-89 817A RELAY sot-89 marking ct PDF

    2SA1797

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 FEATURES 1 * Low saturation voltage. VCE SAT =-0.35V(Max) at IC / IB=-1A / -50mA * Excellent DC current gain characteristics SOT-223 SOT-89 1 TO-252 *Pb-free plating product number:2SA1797L


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    2SA1797 -50mA OT-223 OT-89 O-252 2SA1797L 2SA1797-x-AA3-R 2SA1797L-x-AA3-R 2SA1797-x-AB3-R 2SA1797L-x-AB3-R 2SA1797 PDF

    bipolar junction transistor

    Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
    Text: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 • Single Transistors in SOT-223 Package • Highest Collector Current Rating Among Diodes, Inc.’s Bipolar Junction Transistor Product


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    OT-223 DZT851, DZT853, DZT951, DZT953 OT-223 DZT851 DZT951 DZT853 bipolar junction transistor FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a PDF

    sot-223 body marking D K Q F

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA


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    MMFT108T1/D OT-223 MMFT108T1 318E-04, O--261AA) 1-80CM41-2447 sot-223 body marking D K Q F PDF

    marking 93, sot-89

    Abstract: MARKING 93 SOT-89 SOT89 marking b5 STMicroelectronics marking code date sot-89 ST SOt-89 Marking MARKING 93 SOT89 sot-89 marking H1 H1 SOT-89 STN82 STF826
    Text: STF826 PNP medium power transistor Datasheet - production data Features • In compliance with the 2002/93/EC European directive • Available in tape & reel packing • Surface mounting devices in medium power SOT-223 and SOT-89 packages SOT-89 Applications


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    STF826 2002/93/EC OT-223 OT-89 OT-89 STF826 DocID11748 marking 93, sot-89 MARKING 93 SOT-89 SOT89 marking b5 STMicroelectronics marking code date sot-89 ST SOt-89 Marking MARKING 93 SOT89 sot-89 marking H1 H1 SOT-89 STN82 PDF

    Untitled

    Abstract: No abstract text available
    Text: STF826 PNP medium power transistor Datasheet - production data Features • In compliance with the 2002/93/EC European directive s ct • Available in tape & reel packing • Surface mounting devices in medium power SOT-223 and SOT-89 packages SOT-89 Applications


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    STF826 2002/93/EC OT-223 OT-89 OT-89 STF826 DocID11748 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251


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    2SD669/A OT-89 OT-223 2SB649/A O-92NL O-126 O-126C O-251 O-252 2SD669L/2SD669AL PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet LEADFRAME SOT-223 Test Services ● Program generation/conversion ● Wafer probe ● Burn-in ● -55°C to +165°C test available ● Strip test available Small Outline Transistor SOT-223 SOT-223 is a leadframe based, plastic encapsulated package


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    OT-223 OT-223) OT-223 DS582B PDF

    2SD669A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1 TO-92NL 1 TO-126C 1 TO-126 1 TO-251 1 TO-252


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    2SD669/A OT-223 OT-89 2SB649/A O-92NL O-126C O-126 O-251 O-252 2SD669L/2SD669AL 2SD669A PDF

    T6C transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126 „


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    2SD669/A OT-223 OT-89 2SB649/A O-251 O-252 O-92NL O-126 O-126C 2SD669xL-x-AA3-R T6C transistor PDF