6r385P
Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description
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IPL60R385CP
150mm²
6r385P
IPL60R385CP
JESD22
EL series small size SMD transistor
infineon msl
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ulm 2003
Abstract: ulm 2004 ULN2003 current buffer ULN2003 PIN configuration uln2003 buffer ULN2003N ULN2003 equivalent ULN2003 ULN2003 ac ULN2004N
Text: ULN2003/04 Signetics High V o lta g e /H ig h Current Darlington Transistor Arrays Product Specification L in e a r P r o d u c t s D E S C R IP T IO N These high voltage, high current Darling ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a
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ULN2003/04
600mA
ULN2003
ULN2004
ULN2004
ULN2003
ulm 2003
ulm 2004
ULN2003 current buffer
ULN2003 PIN configuration
uln2003 buffer
ULN2003N
ULN2003 equivalent
ULN2003 ac
ULN2004N
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EN4094
Abstract: No abstract text available
Text: SA NY O S E M I C O N D U C T O R CORP Ordering number: EN4094 b3E D • 7n7D7b D Q l E M ô b 04Ô * T S A J I Monolithic Digital 1C SÄWO LB1741 No. 4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor
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EN4094
LB1741
LB1741
18-pin
EN4094
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Untitled
Abstract: No abstract text available
Text: TO SH IBA GT60M104 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 6 0 M 1 04 HIGH POW ER SW ITCHING APPLICATIONS U nit in mm High Input Impedance High Speed : tf= 0 .4 /is Max. Low Saturation Voltage : V q e (sat) = 3 '7 v (Max.)
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GT60M104
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BFP540
Abstract: Transistor BFP540 BGB540 GPS05605 T0559
Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,
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D-81541
BGB540
BGB540
BFP540.
GPS05605
BFP540
Transistor BFP540
GPS05605
T0559
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 1999 May 27 NXP Semiconductors Product data sheet NPN switching transistor PMSS3904 PINNING FEATURES • Low current max. 100 mA
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M3D187
PMSS3904
SC-70
OT323)
PMSS3906.
115002/04/pp7
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62003F
Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F
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40Series,
226Devices)
62003P/PA
2003A
2004A
62003F/FB/
62004F/FB/
16bit
TB62705BF
DIP24
62003F
62004f
62004A
TD62801P
62004AP
A 107 transistor
TD62XXX
62c852
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lem HA
Abstract: BU1708AX
Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.
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BU1708AX
OT186A;
OT186
007753b
lem HA
BU1708AX
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transistor RJp 30
Abstract: RJP3 transistor RJp 2Ghz mixer
Text: Tem ic U 2795 B-FP TELEFUNKEN Semiconductors 2-GHz Double Balanced Mixer Description U 2795 B is a 2-GHz mixer for R F telecom munications equipm ent, e.g. D E C T and PCN, built with T E L E FU N K E N ’s advanced bipolar technology. A double balanced approach was chosen to assure
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D-74025
transistor RJp 30
RJP3
transistor RJp
2Ghz mixer
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BP317
Abstract: PH2222A PH2907A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor Product specification Supersedes data of 1997 Sep 04 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING • High current max. 600 mA
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M3D186
PH2222A
PH2907A.
MAM182
SCA63
115002/00/04/pp8
BP317
PH2222A
PH2907A
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE Philips Semiconductors Data sheet status Product specification date o f issue March 1993 b^Z T> • bbSaiai D02H 71 276 BLV97CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain
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BLV97CE
OT171
MRC17S
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TA 7362
Abstract: No abstract text available
Text: ISI/CSI II- LS7362 Since 1969 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NV 11747 516 271 -0400 FRX (516) 271-0405 BRUSHLESS DC MOTOR COMMUTATOR/CONTROLLER Oipvtmhir 1992 FEATURES: • Speed Control by Pulse Width Modulation (PWM) of low-side drivers only.
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LS7362
53D4b0b
00011L
5304bDb
TA 7362
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LS7261
Abstract: LSI OR CSI LS7260 LS7262 Q102 Q103 Q104 Q105 LS7261/LS7262
Text: LSI/CSI ÜESE3 B H B H Manufacturers of Custom and Standard L S I Circuits LS7260/LS7261 LS7262 1235 Walt W hitman Road. Melville, NY 11747-3086 • Tel.: 516 271-0400 • Fax: (516) 271-0405 Revised October, 19S BRUSHLESS DC MOTOR COMMUTATOR/CONTROLLER
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LS7260/LS7261
LS7262
LS7260)
LS7261/LS7262)
LS7260/
LS7261
LSI OR CSI
LS7260
LS7262
Q102
Q103
Q104
Q105
LS7261/LS7262
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Untitled
Abstract: No abstract text available
Text: 1324 *10 27 1 1 2 Ö G2 M DD S M IT S U B IS H I (»GTL • M IT 3 M IT S U B IS H I B IPO LAR D IGITAL ICs M 54585P LOGIC 8 -U N IT 500m A D A RLIN G TO N T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M 54585P, 8-channel sink driver, consists of 16 NPN
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54585P
54585P,
500mA
M54585P
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PMBT2369
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT PMBT2369 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 27 2004 Jan 22 NXP Semiconductors Product data sheet NPN switching transistor PMBT2369 PINNING FEATURES • Low current max. 200 mA PIN • Low voltage (max. 15 V).
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PMBT2369
MAM255
R75/04/pp7
PMBT2369
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PH2369
Abstract: SC-43A PH2369 Philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2369 NPN switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification NPN switching transistor PH2369 FEATURES PINNING • Low current max. 200 mA
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M3D186
PH2369
MAM182
SC-43A
SCA76
R75/04/pp7
PH2369
SC-43A
PH2369 Philips
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BS-P0303
Abstract: Royal Electronics DATASHEET BSP030 BSP030 HZG336 SC-73 03ac29
Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.
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BSP030
BSP030
OT223.
OT223,
BS-P0303
Royal Electronics
DATASHEET BSP030
HZG336
SC-73
03ac29
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Untitled
Abstract: No abstract text available
Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.
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BSP030
BSP030
OT223.
OT223,
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LS7262
Abstract: LS7261/LS7262
Text: •1UM 6 1991 LSI/CSI LS7260/LS7261 LS7262 ■ ■ ■ IM " $!s ■ ■ ■ Manufacturers of Custom and Standard L S I Circuits 1235 Walt Whitman Road, Melville, N Y 11747-3086 • Tel.: 516 271-0400 • Fax: (516) 271-0405 • TWX: (510) 226-7833 R evised O ctober, 1990
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LS7260/LS7261
LS7262
LS7260)
LS7261/LS7262)
LS7260/61/62
LS7261
LS7260
LS7262
LS7261/LS7262
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PSMN035-150B
Abstract: PSMN035-150P OC204
Text: PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Rev. 04 — 22 February 2001 Product specification 1. Description SiliconMAX 1 products use the latest TrenchMOS™2 technology to achieve the lowest possible on-state resistance for each package.
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PSMN035-150B;
PSMN035-150P
PSMN035-150P
O-220AB)
PSMN035-150B
OT404
OT404,
OC204
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PBSS5140T
Abstract: TRANSISTOR SMD MARKING CODES PBSS4140T NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS5140T
O-236AB)
PBSS4140T.
PBSS5140T
TRANSISTOR SMD MARKING CODES
PBSS4140T
NXP TRANSISTOR SMD MARKING CODE SOT23
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MMBT3904
Abstract: MMBT3906
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 MMBT3904 NPN switching transistor Product specification Supersedes data of 2002 May 13 2002 Oct 04 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES QUICK REFERENCE DATA
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M3D088
MMBT3904
MMBT3906.
SCA74
613514/03/pp8
MMBT3904
MMBT3906
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT PMBT3904 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 27 2004 Jan 12 NXP Semiconductors Product data sheet NPN switching transistor PMBT3904 FEATURES QUICK REFERENCE DATA • Collector current capability IC = 200 mA
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PMBT3904
PMBT3906.
PMBT3904
R75/04/pp9
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SMD transistor MARKING CODE 312
Abstract: SOT23-4 MARKING U6 PBSS5160T BCP52 BCX52 PBSS4160T TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC NXP TRANSISTOR SMD MARKING CODE SOT23 pbss5160
Text: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PBSS5160T
O-236AB)
PBSS4160T.
BCP52
BCX52
PBSS5160T
SMD transistor MARKING CODE 312
SOT23-4 MARKING U6
BCX52
PBSS4160T
TRANSISTOR SMD MARKING CODE 04
MARKING CODE SMD IC
NXP TRANSISTOR SMD MARKING CODE SOT23
pbss5160
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