TRANSISTOR T 67 Search Results

TRANSISTOR T 67 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3082	Rochester Electronics LLC	Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	Small Signal Bipolar Transistor
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

TRANSISTOR T 67 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays	Original	PDF	M63816P/FP/KP 300mA M63816P/FP/KP
18P4G Abstract: 20P2N-A M63817FP M63817KP M63817P Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays	Original	PDF	M63817P/FP/KP 300mA M63817P/FP/KP 18P4G 20P2N-A M63817FP M63817KP M63817P
18P4G Abstract: 20P2N-A M63815FP M63815KP M63815P Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays	Original	PDF	M63815P/FP/KP 300mA M63815P/FP/KP 18P4G 20P2N-A M63815FP M63815KP M63815P
M63816FP Abstract: 18P4G 20P2N-A M63816KP M63816P Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays	Original	PDF	M63816P/FP/KP 300mA M63816P/FP/KP M63816FP 18P4G 20P2N-A M63816KP M63816P
CA3096 Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96 Text: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of	Original	PDF	CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096AE 40841 MOSFET CA3096AM96
UTC 7312 Abstract: BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t Text: *BUX 11N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E Preferred device D is p o s itif recommandé High speed, high current, high power transistor Transistor de puissance rapide, f o r t couran t 160 V	OCR Scan	PDF	CB-19 UTC 7312 BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
BUX12 Abstract: sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf Text: *B UX12 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device Dispositif recommandé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension	OCR Scan	PDF	BUX12 CB-19 BUX12 sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf
FT5753M Abstract: FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M Text: Darlington Transistor Arrays Power Transistor Products INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays. Each array consists o f 4-D arlin gton Transistors. T h e array is packaged in a small plastic 12-pin single in-line package w ith or	OCR Scan	PDF	12-pin FT5753M FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M
2SA675 Abstract: t430 transistor t430 T591 PA33 ss-3r Text: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £	OCR Scan	PDF	2SA675 2SA675 t430 transistor t430 T591 PA33 ss-3r
BCY67 Abstract: HTI 2E 101S Q62702-C254 Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in	OCR Scan	PDF	BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254
Y parameters of transistors at41533 Abstract: No abstract text available Text: What HEWLETT* m iltm PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data A T -4 1 5 1 1 A T -4 1 5 3 3 F e a tu re s • General Purpose NPN Bipolar Transistor • 900 MHz Performance: A T -41511: 1 dBNF, 15.5 dBGA A T -41533: 1 dBNF, 14.5 dBGA	OCR Scan	PDF	OT-23 OT-143 sAT-41511 AT-41533 OT-23, AT-415 OT-143. Y parameters of transistors at41533

C945C Abstract: No abstract text available Text: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high	OCR Scan	PDF	AT-32063 OT-363 SC-70) AT-32063 OT-363 C945C
field-effect transistors Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684 Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .	OCR Scan	PDF	2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684
EM- 546 motor Abstract: 2N6545 2N6545 Motorola 2N6544 Text: MOTOROLA SC XSTRS/R F 12E D \| b3b72S4 QQflMbbt Ö \| T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,	OCR Scan	PDF	b3b72S4 2N6545 EM- 546 motor 2N6545 Motorola 2N6544
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	PDF	BLV11
2N4115 Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346 Text: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca\|l T O LL FR EE 800-526-4581 PNP	OCR Scan	PDF	NPWTO-111 fl35a 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
2n5863 Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447 Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V	OCR Scan	PDF	0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
bf679t Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor Text: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages	OCR Scan	PDF	00G542E 569-GS bf679t transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
SAMSUNG transistor Abstract: No abstract text available Text: SAMSUNG S E M IC O N D U C T O R INC MMBTA70 14E D \| 000731U 5 \| PNP EPITAXIAL SILICON TRANSISTOR f AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T*=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation	OCR Scan	PDF	000731U MMBTA70 OT-23 MMBT5086 SAMSUNG transistor
a3 sot 343 Abstract: No abstract text available Text: T fmtt T S D F 1 2 0 5 W / T S D F 1 2 0 5 R W Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain	OCR Scan	PDF	TSDF1205W TSDF1205RW D-74025 28-Oct-97 a3 sot 343
1BW TRANSISTOR Abstract: 000G24E Text: T FF 300 R 06 KL EUPEC 52E » R th J C Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 300 A A R th C K V ces 000G 24E Thermische Eigenschaften Transistor Transistor 3 4 0 3 2 e] ? • AMO t p = 1ms 600 P to t	OCR Scan	PDF	34032e] 000G24E 34D32CI7 1BW TRANSISTOR

TRANSISTOR T 67 Search Results

TRANSISTOR T 67 Result Highlights (5)

TRANSISTOR T 67 Datasheets Context Search

Untitled

18P4G

18P4G

M63816FP

CA3096

UTC 7312

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

BUX12

FT5753M

2SA675

BCY67

Y parameters of transistors at41533

C945C

field-effect transistors

EM- 546 motor

Untitled

2N4115

2n5863

bf679t

SAMSUNG transistor

a3 sot 343

1BW TRANSISTOR