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    TRANSISTOR T03 Search Results

    TRANSISTOR T03 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PRSS0004ZC-A

    Abstract: No abstract text available
    Text: Magazine T03PL code Magazine PVC material Polyvinyl chloride Package name Renesas code Previous code TO-3PL* PRSS0004ZC-A T3PL Maximum storage No. Maximum storage No. Maximum storage No. Transistor/Magazine Magazine/Inner box Transistor/Inner box 25 10 250


    Original     		PDF T03PL PRSS0004ZC-A PRSS0004ZC-A

    3p transistor

    Abstract: PRSS0004ZB-A
    Text: Magazine code Magazine material T03P-LF PVC Polyvinyl chloride Package name Renesas code Previous code Maximum storage No. Transistor/Magazine TO-3P* PRSS0004ZB-A T3PO 30 Maximum storage No. Maximum storage No. Packing form Magazine/Inner box Transistor/Inner box


    Original     		PDF T03P-LF PRSS0004ZB-A S0004ZB-A 3p transistor PRSS0004ZB-A

    transistor TO220

    Abstract: TO-220 transistor package T03A TA15A T02D TA15D TA03F T-03-A T03B T03D
    Text: Transistor Outline TO-220 2 Lead Molded TO-220 NS Package Number T02D 1999 National Semiconductor Corporation MS101173 www.national.com Transistor Outline (TO-220) May 1999 2 Lead Molded TO-220 NS Package Number TA02A 3 Lead Molded TO-220 NS Package Number T03A


    Original     		PDF O-220) O-220 MS101173 TA02A transistor TO220 TO-220 transistor package T03A TA15A T02D TA15D TA03F T-03-A T03B T03D

    transistor Marking code t03

    Abstract: PDTA114EU PDTC114EU
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor Product specification Supersedes data of 1997 Oct 03 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor


    Original     		PDF M3D102 PDTA114EU MAM135 SCA55 115104/1200/05/pp8 transistor Marking code t03 PDTA114EU PDTC114EU

    BUZ54

    Abstract: No abstract text available
    Text: , Una. \l Cs 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ54 PowerMOS Transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope.


    Original     		PDF BUZ54 Tmb-25 Tj-25Â VR-100V BUZ54

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: 7^0741 SSE D SANKEN ELECTRIC CO LT» 0000=175 60S * S A K J Silicon NPN Epitaxial Planar ☆ High hFE Transistor, Low VcEisat Transistor ☆ Switching Transistor SC4024 Application Example: DC to DC Converter, Emergency Lighting Inverter, and General Purpose


    OCR Scan     		PDF SC4024 50min 300min 24typ 45x01 MT-25 T0220)

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling


    OCR Scan     		PDF O-340-T O-340-G O-34O0-T T0-360-T 852-26904858-Fax:

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.


    OCR Scan     		PDF 2SB1388/2SD2093 2SB1388 2SD2093 00V/10A T03PML c17D7b 3720-l/4

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    8B123

    Abstract: 2SB1232 2SD1842 1SB12
    Text: |~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.


    OCR Scan     		PDF 2SB1232/2SD1842 2SB1232 2SD1842 00V/40A 8B123 2SB1232 2SD1842 1SB12

    k554

    Abstract: 200B BUK554-200A BUK554-200B D030 T0220AB
    Text: b'lE T> • N AUER PHILIPS/DISCRETE bbS3T31 DD30flDD D77 » A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF K554-200A/B BUK554 -200A -200B k554 200B BUK554-200A BUK554-200B D030 T0220AB

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E T> • bb53T31 0030600 D77 » A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF bb53T31 O220AB BUK554-200A/B BUK554 0030flD4

    NPN POWER TRANSISTOR 2SD1878

    Abstract: transistor 2sD1880 D1879 sd1878
    Text: SAXYO TRANSISTO RS FOR CRT DISPLAY VIDEO O U TPUT A P PLICATIONS Transistors for High~Definition Monitor TV Applications Transistors for Video Output Applications The use of new technology, FBET Fold-Back Electrode Transistor and MBIT (Multi-Base Island Transistor), that are


    OCR Scan     		PDF 50MHz. MT921226TR NPN POWER TRANSISTOR 2SD1878 transistor 2sD1880 D1879 sd1878

    3261a

    Abstract: 2SB1232 2SD1842 B1232
    Text: O rdering num ber: EN 3261A 2SB1232/2SD1842 N0.3261A 2SB1232: PNP Epitaxial Planar Silicon Transistor 2SD1842: NPN Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications F e a tu re s • Large current capacity and wide ASO. •Low saturation voltage.


    OCR Scan     		PDF 2SB1232/2SD1842 2SB1232: 2SD1842: 00V/40A 2SB1232 2SD1842 3261a 2SB1232 B1232

    2SB1231

    Abstract: 2SD1841
    Text: O rdering num ber: EN3260A SMÊYO % No 326ÖA i 2SB1231/2SD1841 2SB1231: PNP Epitaxial Planar Silicon Transistor 2SD1841: NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications Features • Large current capacity and wide ASO. • Low saturation voltage.


    OCR Scan     		PDF EN3260A 2SB1231/2SD1841 2SB1231: 2SD1841: 00V/25A 2SB1231 T03PB 71095TS/7190MH 2SB1231 2SD1841

    BUZ64

    Abstract: MC 331 transistor transistor d 331
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding, DC/DC and DC/AC converters,


    OCR Scan     		PDF BUZ64 bb53T31 T-39-13 T-39-13 BUZ64 MC 331 transistor transistor d 331

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 00147BH BUZ54A T-39-13 bbS3T31 0D1472T bb53131

    Untitled

    Abstract: No abstract text available
    Text: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF D014b33 BUZ63_ bbS3T31 T-39-11 BUZ63 14h3fl III11 i111111

    buz53a

    Abstract: No abstract text available
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE _BUZ53A_ DbE D • bbS3T31 DD14710 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ53A_ bbS3T31 DD14710 T-39-11 LLS3T31 BUZ53A 0Dm71b buz53a

    BUZ24

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53c BUZ24 bbS3T31 Q014bD2 T-39-13 BUZ24_ 0D14b03 BUZ24

    BUZ54A

    Abstract: IEC134 BUZ54
    Text: N AMER PHILIPS/DISCRETE übE D PowerMOS transistor " • ^53=131 0014724 S ■ BUZ54A T - 2^-/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ54A 7Z63885 T-39-13 BUZ54A IEC134 BUZ54

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.


    OCR Scan     		PDF BUZ45A_ bb53T31 0014bS7 T-39-13 T-39-13 D014bST BUZ45A