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    TRANSISTOR T06 Search Results

    TRANSISTOR T06 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    transistor t06

    Abstract: PDTC124EU
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC124EU NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jun 16 File under Discrete Semiconductors, SC04 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor


    Original     		M3D102 PDTC124EU OT323 PDTA124EU. MGA893 PDTC124EU SCA60 115104/1200/02/pp8 transistor t06 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    2N2464

    Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
    Text: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO


    OCR Scan     		3T5fl001 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N2464 TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor PDF

    2N2464

    Abstract: transistor 2n2270 2N6369 D 756 transistor
    Text: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,


    OCR Scan     		00QD074 100TT T0-102 2N2464 transistor 2n2270 2N6369 D 756 transistor PDF

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716 PDF

    2N5302 EB

    Abstract: 2N1463 2n4271
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3


    OCR Scan     		SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271 PDF

    ms 7254 ver 1.1

    Abstract: ms 7254 ver 3.0 T557
    Text: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS


    OCR Scan     		L3b75S4 MJE13070 MJE13070 ms 7254 ver 1.1 ms 7254 ver 3.0 T557 PDF

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


    OCR Scan     		0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447 PDF

    IC650

    Abstract: MJ1000
    Text: Date:- 18 Jun, 2003 Provisional Data  Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0650TA52A MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0650TA52A IC650 MJ1000 PDF

    uc 3284

    Abstract: westcode IC600 transistor polar D-68623 T0600 3776a DIODE 1000 A
    Text: WESTCODE An Date:- 19 Dec, 2006 Data Sheet Issue:- 1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TA45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V VCES Collector – emitter voltage 4500 VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0600TA45A T0600TA45A uc 3284 westcode IC600 transistor polar D-68623 T0600 3776a DIODE 1000 A PDF

    T0600TB

    Abstract: transistor P1
    Text: WESTCODE An Date:- 16 Feb, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0600TB45A T0600TB45A T0600TB transistor P1 PDF

    LT 5251

    Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
    Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >


    OCR Scan     		02SD4711 cycleS50% LT 5251 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564 PDF

    transistor t06

    Abstract: transistor t06 19 T06 transistor
    Text: Philips Semiconductors Product specification PNP switching transistor PMSS3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • Switching in e.g. telephony and professional


    OCR Scan     		PMSS3906 SC-70; OT323 PMSS3904. PMSS3906 OT323) transistor t06 transistor t06 19 T06 transistor PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    TO-213AA

    Abstract: 2N3879 2N3879 JANTX TO213AA
    Text: 2N3879 NPN POWER SILICON TRANSISTOR IN A HERMETICALLY SEALED METAL PACKAGE MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 FEATURES 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590)


    Original     		2N3879 T0-66 O-213AA) TO-213AA 2N3879 2N3879 JANTX TO213AA PDF

    SPT6502

    Abstract: SPT6503 T066
    Text: m i PRELIMINARY DATA SHEET 2 AMP HIGH VOLTAGE SPT6502 Solid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213} 921-9660 TW X -910-583-4807 * * * * FEATU RES HIGH SPEED SPT6503 NPN SILICON POWER TRANSISTOR 800V BLOCKING CAPABILITY


    OCR Scan     		TWX-910-583-4807 SPT6502 SPT6503 75mAdc 200Vdc 700ns. SPT6503 200mAdc) 300/is, T066 PDF

    Untitled

    Abstract: No abstract text available
    Text: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Ceramic Surface Mount Dual Transistor Dual device in CSM Ceramic Surface Mount Dual device in CSM 50004-017 50004-017 50004-017 50004-017 50004-133 50004-133 50003-021 50003-021 Polarity Package lc_cont


    OCR Scan     		PDF

    TRANSISTOR MARKING CODE IAM

    Abstract: transistor marking t06 transistor t06 transistor MARKING IAM T06 transistor PDTC124EU
    Text: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EU FEATURES • Built-in bias resistors R1 and R2 typ. 22 k£2 each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space


    OCR Scan     		OT323 PDTA124EU. PDTC124EU OT323) TRANSISTOR MARKING CODE IAM transistor marking t06 transistor t06 transistor MARKING IAM T06 transistor PDTC124EU PDF

    t310m

    Abstract: marking SPICE thyristor model TB3100M-13-F GR-1089-CORE J-STD-020D TB0640M TB0720M TB3500M
    Text: TB0640M - TB3500M Green 50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR DUAL NPN TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • 50A Peak Pulse Current @ 10/1000 s


    Original     		TB0640M TB3500M 10/1000s 8/20s GR-1089-CORE, UL497B DS30361 t310m marking SPICE thyristor model TB3100M-13-F GR-1089-CORE J-STD-020D TB0720M TB3500M PDF

    smd transistor marking 12W

    Abstract: 2N3740 equivalent 2n3741 Stancor C-2691 2N3740 C-2688 2n3741 MIL-STD 2N3741 equivalent PSC.441K 2N3740U4
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 June 2010. MIL-PRF-19500/441K 30 March 2010 SUPERSEDING MIL-PRF-19500/441J 14 November 2006 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,


    Original     		MIL-PRF-19500/441K MIL-PRF-19500/441J 2N3740, 2N3740U4, 2N3741, 2N3741U4, smd transistor marking 12W 2N3740 equivalent 2n3741 Stancor C-2691 2N3740 C-2688 2n3741 MIL-STD 2N3741 equivalent PSC.441K 2N3740U4 PDF

    Untitled

    Abstract: No abstract text available
    Text: BIG IDEAS IN PowerTech big po w er ” • SO AM PERES PT-3516 HIGH VOLTAGE SILICON IMPN TRANSISTOR FEATURES V c E s a t . 0 .5 @ 1 0 A h p E . 5 min. @20A I s / B . 0 .06A @ 600V


    OCR Scan     		PT-3516 T0-63 300jusec PDF