Transistor 3TY
Abstract: CLED400 CLT4140 CLT4150 CLT4160
Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
300jusec.
214E711
70-c/i
Transistor 3TY
CLT4160
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Untitled
Abstract: No abstract text available
Text: “BIG IDEAS IN BIG POWER ” • ■ ■ PowerTech ■ 40 AMPERES PT-3526 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.5V @ 20A h p E . 5 m in. @ 4 0 A I s / B .
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PT-3526
300jusec
100/iA
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Untitled
Abstract: No abstract text available
Text: O ptoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T he H U G series consists o f a gallium arsenide, infrared emitting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to
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H11G3
300jusec,
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Untitled
Abstract: No abstract text available
Text: 37E J> HARRIS SEMICOND SECTOR 4302571 G[12713b D B H A S Optoelectronic Specifications — Photon Coupled isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — M IL L IM E T E R S SYVIAJL Ga A s Infrared E m ittin g D io d e & N P N S ilico n P h oto-D arlin gton A m p lifier
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12713b
4N29-4N29A-4N30-4N31
4N32-4N32A-4N33
S-429S
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Untitled
Abstract: No abstract text available
Text: ÛM4001ST OM4002ST 15 AMP SCHOTTKY RECTIFIER IN SMALL HERMETIC PACKAGE FEATURES • • • • • • • • Small Size Very Low Forward Voltage Very Fast Switching Time Hermetic Metal Package Low Thermal Resistance Isolated Package 45V And 60V Reverse Voltage
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M4001ST
OM4002ST
MIL-S-19500,
300jusec,
C----100Â
b76TDV3
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a4n33
Abstract: H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1
Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100
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H11A10
H11AA1
H11AA2
H11D1
H11D2
H11D3
H11D4
4N38A
H11B1
H11B2
a4n33
H11B255
H13A2
H11C1
photo interrupter module
photo interrupter module h13a1
4N38
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2N5552
Abstract: PT-3526 IC 3526 powertech
Text: GD0D3E1 7 1?E D "BIG IDEAS IN BIG POWER” • PowerTecn POIdERTECH INC 40 AMPERES PT-3526 T - l ^ - l S HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V cE sat . 0.5V @20A h p E . 5 min. @40A V b E . 1.5V @20A
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PT-352Ã
150PC
2N5552
2N5552
PT-3526
IC 3526
powertech
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Untitled
Abstract: No abstract text available
Text: BIG IDEAS IN PowerTech big po w er ” • SO AM PERES PT-3516 HIGH VOLTAGE SILICON IMPN TRANSISTOR FEATURES V c E s a t . 0 .5 @ 1 0 A h p E . 5 min. @20A I s / B . 0 .06A @ 600V
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PT-3516
T0-63
300jusec
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1307 TRANSISTOR
Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100
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H11A10
H11AA1
H11AA2
H11D1
H11D2
H11D3
H11D4
4N38A
H11B1
H11B2
1307 TRANSISTOR
H15B1
4N38-4N38A
"Photo Interrupter" dual transistor
4N38
IC VS 1307
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
150mA)
2N4401
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OM4001ST
Abstract: OM4002ST
Text: OM4001ST OM4002ST 15 AMP SCHOTTKY RECTIFIER IN SMALL HERMETIC PACKAGE FEATURES • • • • • • • • Small Size Very Low Forward Voltage Very Fast Switching Time Hermetic Metal Package Low Thermal Resistance Isolated Package 45V And 60V Reverse Voltage
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OM4001ST
OM4002ST
MIL-S-19500,
300jusec,
OM4002ST
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CLT4160
Abstract: No abstract text available
Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
-25ma
300jusec.
Em57t
CLT4160
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Untitled
Abstract: No abstract text available
Text: SEMELAB 0133107 G0DG2b7 =] 37E D LTD ISHLB T-39-13 SEMELAB ji'ii >S/y<s tex' n • -fi-* BUZ 64 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm -M I * - 1 .6 1 39.5 20.3 1 A PP LIC A T IO N S • MOTOR CONTROL • SMPS 9.0 12.0 PIN 1 - G ate
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T-39-13
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Untitled
Abstract: No abstract text available
Text: 17E D • 7E TflTti4 7 ■ POUERTECH INC “BIG IDEAS IN BIG POWER" K i ■ PowerTech 500AMPERES MT-6010 T POWERBLQCK POWER SYSTEM SYM BOL MT-6010 Collector-Base Voltage VCBO 450V Collector-Emitter Voltage VCE 400V Emitter-Base Voltage VEBO 10V Peak Collector Current
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500AMPERES
MT-6010
PPS-1200
300jusec.
Q7410
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