Transistor 3TY
Abstract: CLED400 CLT4140 CLT4150 CLT4160
Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
300jusec.
214E711
70-c/i
Transistor 3TY
CLT4160
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CLED400
Abstract: CLT4140 CLT4150 CLT4160 CLT400
Text: CLAIREX ELECTRONICS DIV ITE D • 21457^ GQ007LG 5 T - ^ l - <ol CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit
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GQ007LG
CLT4140
CLT4150
CLT4160
CLT4000
CLED400
20mW/cm2
28544K.
300psec.
CLT4160
CLT400
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LT414
Abstract: LT4140 LT416
Text: HOE 1> BHT'lTBfi 0001007 H O S E N I FASCO INDS/ SENISYS CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors 4 'l GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
LT414
LT4140
LT416
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CLED400
Abstract: CLT4140 CLT4150 CLT4160
Text: 4DE D B 3 4 =^ 73 6 0D Q 1 0 D 7 4 OSENI FASCO INDS/ SE NI SY S CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors G E N E R A L D E SC R IP T IO N — The CLT4000 series are photo tran sisto rs molded in a clear epoxy package. Lead fram e construction allows direct soldering into circuit
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0DQ10Q7
CLT4140
CLT4150
CLT4160
CLT4000
CLED400
300Hsec.
CLT41
CLT4160
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CLT4160
Abstract: No abstract text available
Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
-25ma
300jusec.
Em57t
CLT4160
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TIL78
Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE
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TIL78
Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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TIL78
Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
SA2739
phototransistor OCP71
cm601
JAN2N491
photo transistor til78
til78 phototransistor
CM602
FPN100
ft06
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
photo transistor til78
K1202
phototransistor OCP71
photo TIL78
til78 phototransistor
2n318
2SK19GR
2SK19Y
C682A
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TIL78
Abstract: photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
photo transistor til78
OCP71
sp8309
sp8311
3n57
2N577
TIL-78
photo TIL78
1N4378
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TIL78
Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
photo transistor til 78
photo transistor til78
sk 110 19 20n
2sc640 transistor
2SC286
2SC287
2SC430
400M
PMT222
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TIL78
Abstract: photo transistor til78 TIL78 em
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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TIL78
Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
MRD100
FSP165
BSW11
rt930
2N577
BC198A
BFY47
10G1051
D10B1055
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Untitled
Abstract: No abstract text available
Text: 4QE D Hi 3 4 ^ ^ 7 3 S D0Q1Q33 5 E3SENI FASCO INDS/ SENISYS CLED400 Gallium Arsenide Infrared Emitting Diode •*.092 - GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded m a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.
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D0Q1Q33
CLED400
CLED400
CLT4140,
CLT4160
CLR4180
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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TIL149
Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55
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GQ133Ã
CLA60.
C-101-C
CLA60AA
C-101-B
CLA60AB
C-101-A
CLA65.
C-102
CLA65AA
TIL149
HOA708-1
S-180-a55
SPX2862
HS-230-40W
HOA708
SLOTTED OPTICAL SWITCH
HOA1160
h0a2001
A11W
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CLED400
Abstract: CLR4180 CLT4140 CLT4160 DDD1033 DIODE s04 a
Text: MOE D H 34^730 F AS C O INDS/ DD D1 0 3 3 S HISENI SENISYS CLED400 1 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.
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DDD1033
CLED400
CLED400
CLT4140,
CLT4160
CLR4180
CLT4140
DIODE s04 a
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MAL100
Abstract: CLED400 CLR4180 CLT4140 CLT4160
Text: 1TE D CLAIREX ELECTRONICS DIV • 2 1 4 a 7 T ï □ Q O a ? f it . 1 1- q i - l l CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.
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CLED400
CLED400
CLT4140,
CLT4160
CLR4180
Ips20mA
MAL100
CLT4140
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Untitled
Abstract: No abstract text available
Text: CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,
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CLED400
CLED400
CLT4140,
CLT4160
CLR4180
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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D1302
Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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Bvn 10k
Abstract: CLED400 CLR4180 CLT4140 CLT4160
Text: CLED400 Gallium Arsenide Infrared Em itting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,
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CLED400
CLED400
CLT4140,
CLT4160
CLR4180
Bvn 10k
CLT4140
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TIL78
Abstract: 2SA124 SMT102 2sa123 2sa155 AF101 2N534 MA520 maa 550 TF65
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
2SA124
SMT102
2sa123
2sa155
AF101
2N534
MA520
maa 550
TF65
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