Untitled
Abstract: No abstract text available
Text: 4QE D Hi 3 4 ^ ^ 7 3 S D0Q1Q33 5 E3SENI FASCO INDS/ SENISYS CLED400 Gallium Arsenide Infrared Emitting Diode •*.092 - GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded m a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.
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D0Q1Q33
CLED400
CLED400
CLT4140,
CLT4160
CLR4180
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CLED400
Abstract: CLR4180 CLT4140 CLT4160 DDD1033 DIODE s04 a
Text: MOE D H 34^730 F AS C O INDS/ DD D1 0 3 3 S HISENI SENISYS CLED400 1 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.
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DDD1033
CLED400
CLED400
CLT4140,
CLT4160
CLR4180
CLT4140
DIODE s04 a
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quantum dot
Abstract: CLT400 CLED400 CLED400A CLED400B CLED400C
Text: FASCO INKS/ SE NI SY S 40E 34^730 D D G Q 1 3 2 Q fi S E N I i iiraym aii • CLED400 Series Gallium Arsenide Infrared Emitting Diodes 1 X 0 .0 8 5 C2.163 r 0 .0 7 6 C1.933 L DIMENSIONS ARE IN INCHES CHILLINETERSJ 0 .4 2 5 [1 0 ,8 0 ] 0 .3 2 5 C 8 .2 6 Í
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CLED400
quantum dot
CLT400
CLED400A
CLED400B
CLED400C
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MAL100
Abstract: CLED400 CLR4180 CLT4140 CLT4160
Text: 1TE D CLAIREX ELECTRONICS DIV • 2 1 4 a 7 T ï □ Q O a ? f it . 1 1- q i - l l CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.
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CLED400
CLED400
CLT4140,
CLT4160
CLR4180
Ips20mA
MAL100
CLT4140
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Untitled
Abstract: No abstract text available
Text: CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,
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CLED400
CLED400
CLT4140,
CLT4160
CLR4180
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Bvn 10k
Abstract: CLED400 CLR4180 CLT4140 CLT4160
Text: CLED400 Gallium Arsenide Infrared Em itting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,
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CLED400
CLED400
CLT4140,
CLT4160
CLR4180
Bvn 10k
CLT4140
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Transistor 3TY
Abstract: CLED400 CLT4140 CLT4150 CLT4160
Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
300jusec.
214E711
70-c/i
Transistor 3TY
CLT4160
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CLED400
Abstract: CLR4180 CLR4185
Text: MDE D BMTìTBfl 00 01 01 7 7 ES SENI E3 F ASCO INDS/ S E NI SV S , T"1-• j * - CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor 5 i GEN ERAL D ESC RIPTIO N — The CLR4180 and CLR4185 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense
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CLR4180
CLR4185
CLR4185
CLED400,
20mW/cm2
CLR4180
CLED400
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2654
Abstract: CLED400 CLR4180 CLR4185 NPN 200 VOLTS darlington POWER TRANSISTOR Clairex Electronics clr
Text: CLAIREX ELECTRONICS »IV 11E D £1427^ 0Q0Q77Q ñ T=W -L? CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor GEN ERA L DESCRIPTION — The CLR4180 and CLR4185 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense
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0Q0Q77Q
CLR4180
CLR4185
CLR4185
CLED400,
20mW/cm2
300nsec.
2654
CLED400
NPN 200 VOLTS darlington POWER TRANSISTOR
Clairex Electronics clr
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Untitled
Abstract: No abstract text available
Text: 4DE D SI 3 4 ^ 7 3 8 0001017 7 E S E N I FASCO INDS/ SENISYS T^41-C g ^> CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor GENERAL DESCRIPTION — The CLR4180 and CLR4185 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense
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CLR4180
CLR4185
CLR4180
CLR4185
CLED400,
300usec.
34SS73B
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Untitled
Abstract: No abstract text available
Text: CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor GENERAL DESCRIPTION — The CLR4180 and CLR4I85 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense over the transistor to provide controlled angular response
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CLR4180
CLR4185
CLR4180
CLR4I85
CLED400,
300psec.
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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TIL149
Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55
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GQ133Ã
CLA60.
C-101-C
CLA60AA
C-101-B
CLA60AB
C-101-A
CLA65.
C-102
CLA65AA
TIL149
HOA708-1
S-180-a55
SPX2862
HS-230-40W
HOA708
SLOTTED OPTICAL SWITCH
HOA1160
h0a2001
A11W
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CLED400
Abstract: CLT4140 CLT4150 CLT4160 CLT400
Text: CLAIREX ELECTRONICS DIV ITE D • 21457^ GQ007LG 5 T - ^ l - <ol CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit
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GQ007LG
CLT4140
CLT4150
CLT4160
CLT4000
CLED400
20mW/cm2
28544K.
300psec.
CLT4160
CLT400
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LT414
Abstract: LT4140 LT416
Text: HOE 1> BHT'lTBfi 0001007 H O S E N I FASCO INDS/ SENISYS CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors 4 'l GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
LT414
LT4140
LT416
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CLR1185
Abstract: FE60 CLED400 CLR4180 CLR4185
Text: CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor GENERAL D ESC R IPTIO N — The CLR4180 and CLR4185 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense over the transistor to provide controlled angular response
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CLR4180
CLR4185
CLR4185
CLED400,
060-L
030eristics
70-t/i
CLR1185
FE60
CLED400
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Untitled
Abstract: No abstract text available
Text: Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100SC Operating +100”C
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CLED400
Abstract: CLT4140 CLT4150 CLT4160
Text: 4DE D B 3 4 =^ 73 6 0D Q 1 0 D 7 4 OSENI FASCO INDS/ SE NI SY S CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors G E N E R A L D E SC R IP T IO N — The CLT4000 series are photo tran sisto rs molded in a clear epoxy package. Lead fram e construction allows direct soldering into circuit
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0DQ10Q7
CLT4140
CLT4150
CLT4160
CLT4000
CLED400
300Hsec.
CLT41
CLT4160
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CLT4160
Abstract: No abstract text available
Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
-25ma
300jusec.
Em57t
CLT4160
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Senisys
Abstract: CLT400 CLED400 T00C
Text: FASCO INDS/ SE NI SY S 40E D 3 4 cH 7 3 ô 00012fc>0 T ISISENI iCEEaasae CLT400 Silicon Planar Phototransistor Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. Storage Temperature.- W C tq +100“0
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CLT400
0D012bfl
880nm.
Senisys
CLT400
CLED400
T00C
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