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    CLED400 Search Results

    CLED400 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CLED400 Clairex Electronics Gallium Arsenide Infrared Emitting Diode Scan PDF
    CLED400 Clairex Electronics 3 V, 50 mA, gallium arsenide infrared emitting diode Scan PDF
    CLED400A Senisys Gallium Arsenide Infrared Emitting Diodes Scan PDF
    CLED400B Senisys Gallium Arsenide Infrared Emitting Diodes Scan PDF
    CLED400C Senisys Gallium Arsenide Infrared Emitting Diodes Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: 4QE D Hi 3 4 ^ ^ 7 3 S D0Q1Q33 5 E3SENI FASCO INDS/ SENISYS CLED400 Gallium Arsenide Infrared Emitting Diode •*.092 - GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded m a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    PDF D0Q1Q33 CLED400 CLED400 CLT4140, CLT4160 CLR4180

    CLED400

    Abstract: CLR4180 CLT4140 CLT4160 DDD1033 DIODE s04 a
    Text: MOE D H 34^730 F AS C O INDS/ DD D1 0 3 3 S HISENI SENISYS CLED400 1 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    PDF DDD1033 CLED400 CLED400 CLT4140, CLT4160 CLR4180 CLT4140 DIODE s04 a

    quantum dot

    Abstract: CLT400 CLED400 CLED400A CLED400B CLED400C
    Text: FASCO INKS/ SE NI SY S 40E 34^730 D D G Q 1 3 2 Q fi S E N I i iiraym aii • CLED400 Series Gallium Arsenide Infrared Emitting Diodes 1 X 0 .0 8 5 C2.163 r 0 .0 7 6 C1.933 L DIMENSIONS ARE IN INCHES CHILLINETERSJ 0 .4 2 5 [1 0 ,8 0 ] 0 .3 2 5 C 8 .2 6 Í


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    PDF CLED400 quantum dot CLT400 CLED400A CLED400B CLED400C

    MAL100

    Abstract: CLED400 CLR4180 CLT4140 CLT4160
    Text: 1TE D CLAIREX ELECTRONICS DIV • 2 1 4 a 7 T ï □ Q O a ? f it . 1 1- q i - l l CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    PDF CLED400 CLED400 CLT4140, CLT4160 CLR4180 Ips20mA MAL100 CLT4140

    Untitled

    Abstract: No abstract text available
    Text: CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,


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    PDF CLED400 CLED400 CLT4140, CLT4160 CLR4180

    Bvn 10k

    Abstract: CLED400 CLR4180 CLT4140 CLT4160
    Text: CLED400 Gallium Arsenide Infrared Em itting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,


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    PDF CLED400 CLED400 CLT4140, CLT4160 CLR4180 Bvn 10k CLT4140

    Transistor 3TY

    Abstract: CLED400 CLT4140 CLT4150 CLT4160
    Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed


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    PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 300jusec. 214E711 70-c/i Transistor 3TY CLT4160

    CLED400

    Abstract: CLR4180 CLR4185
    Text: MDE D BMTìTBfl 00 01 01 7 7 ES SENI E3 F ASCO INDS/ S E NI SV S , T"1-• j * - CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor 5 i GEN ERAL D ESC RIPTIO N — The CLR4180 and CLR4185 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense


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    PDF CLR4180 CLR4185 CLR4185 CLED400, 20mW/cm2 CLR4180 CLED400

    2654

    Abstract: CLED400 CLR4180 CLR4185 NPN 200 VOLTS darlington POWER TRANSISTOR Clairex Electronics clr
    Text: CLAIREX ELECTRONICS »IV 11E D £1427^ 0Q0Q77Q ñ T=W -L? CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor GEN ERA L DESCRIPTION — The CLR4180 and CLR4185 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense


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    PDF 0Q0Q77Q CLR4180 CLR4185 CLR4185 CLED400, 20mW/cm2 300nsec. 2654 CLED400 NPN 200 VOLTS darlington POWER TRANSISTOR Clairex Electronics clr

    Untitled

    Abstract: No abstract text available
    Text: 4DE D SI 3 4 ^ 7 3 8 0001017 7 E S E N I FASCO INDS/ SENISYS T^41-C g ^> CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor GENERAL DESCRIPTION — The CLR4180 and CLR4185 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense


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    PDF CLR4180 CLR4185 CLR4180 CLR4185 CLED400, 300usec. 34SS73B

    Untitled

    Abstract: No abstract text available
    Text: CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor GENERAL DESCRIPTION — The CLR4180 and CLR4I85 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense over the transistor to provide controlled angular response


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    PDF CLR4180 CLR4185 CLR4180 CLR4I85 CLED400, 300psec.

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    TIL149

    Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
    Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55


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    PDF GQ133Ã CLA60. C-101-C CLA60AA C-101-B CLA60AB C-101-A CLA65. C-102 CLA65AA TIL149 HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W

    CLED400

    Abstract: CLT4140 CLT4150 CLT4160 CLT400
    Text: CLAIREX ELECTRONICS DIV ITE D • 21457^ GQ007LG 5 T - ^ l - <ol CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit


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    PDF GQ007LG CLT4140 CLT4150 CLT4160 CLT4000 CLED400 20mW/cm2 28544K. 300psec. CLT4160 CLT400

    LT414

    Abstract: LT4140 LT416
    Text: HOE 1> BHT'lTBfi 0001007 H O S E N I FASCO INDS/ SENISYS CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors 4 'l GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit


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    PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 LT414 LT4140 LT416

    CLR1185

    Abstract: FE60 CLED400 CLR4180 CLR4185
    Text: CLR4180 CLR4185 Silicon NPN Planar Epitaxial Darlington Phototransistor GENERAL D ESC R IPTIO N — The CLR4180 and CLR4185 Darlington phototransistors are molded in a clear epoxy package. This package includes a molded lense over the transistor to provide controlled angular response


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    PDF CLR4180 CLR4185 CLR4185 CLED400, 060-L 030eristics 70-t/i CLR1185 FE60 CLED400

    Untitled

    Abstract: No abstract text available
    Text: Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100SC Operating +100”C


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    PDF

    CLED400

    Abstract: CLT4140 CLT4150 CLT4160
    Text: 4DE D B 3 4 =^ 73 6 0D Q 1 0 D 7 4 OSENI FASCO INDS/ SE NI SY S CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors G E N E R A L D E SC R IP T IO N — The CLT4000 series are photo tran sisto rs molded in a clear epoxy package. Lead fram e construction allows direct soldering into circuit


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    PDF 0DQ10Q7 CLT4140 CLT4150 CLT4160 CLT4000 CLED400 300Hsec. CLT41 CLT4160

    CLT4160

    Abstract: No abstract text available
    Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed


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    PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 -25ma 300jusec. Em57t CLT4160

    Senisys

    Abstract: CLT400 CLED400 T00C
    Text: FASCO INDS/ SE NI SY S 40E D 3 4 cH 7 3 ô 00012fc>0 T ISISENI iCEEaasae CLT400 Silicon Planar Phototransistor Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. Storage Temperature.- W C tq +100“0


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    PDF CLT400 0D012bfl 880nm. Senisys CLT400 CLED400 T00C