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    TRANSISTOR T222 Search Results

    TRANSISTOR T222 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T222 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: central" Semiconductor Corp. C M P T2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


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    T2222A CMPT2222A OT-23 150mA' 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: Central“ semiconductor Corp. C X T2222A NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CXT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


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    T2222A CXT2222A OT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CMPT2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R C M P T2222Atype is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


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    CMPT2222A OT-23 T2222Atype 150mA, 150mA PDF

    CZT2222A

    Abstract: vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t
    Text: Central“ C Z T2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The C E N TR A L SE M IC O N D U C T O R CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and


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    CZT2222A CZT2222A 150mA, vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    PXT2222

    Abstract: PXT2222A
    Text: 7110fl2b 0 0 ^ 3 3 O n H P H IN P X T2222/A 7 V SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar e p ita xia l transistor, housed in a SO T89 envelope. It is intended fo r sw itching and linear applications. The co m p le m e n tary ty p e is P X T 2 9 0 7 /A .


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    711002b PXT2222/A PXT2907/A. PXT2222 PXT2222A 0x10-" PXT2222 PXT2222A PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    st2222A

    Abstract: PN2907A ST2907A
    Text: Transistors I PNP Medium Power Transistor Switching UMT2907A / SST2907A/MMST2907A / RXT2907A / PN2907A # External dim ensions (Units : mm) •Features 1 ) BV ceo< —40V ( lc = —10mA) 2 ) Complements the UM T2222AÆ ST2222A/MMST2222A/ RXT2222A/PN2222A.


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    UMT2907A SST2907A/MMST2907A RXT2907A PN2907A --40V --10mA) T2222AÆ ST2222A/MMST2222A/ RXT2222A/PN2222A. st2222A PN2907A ST2907A PDF

    R2F SOT-23

    Abstract: K2F marking pnp k2f r2f transistor MMBT2222A MMBT2907A marking k2f
    Text: MMBT2907A VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available M M B T2222A Ideal for Medium Power Amplification and Switching SOT-23 -H .h - a TOF? VIEW


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    MMBT2907A MMBT2222A) OT-23, MIL-STD-202, OT-23 -50mA, 100MHz -150mA, -15mA R2F SOT-23 K2F marking pnp k2f r2f transistor MMBT2222A MMBT2907A marking k2f PDF

    PXT2222

    Abstract: PXT2222A
    Text: • ^53*131 ODESTb? 435 « A P X N AMER PHILIPS/DISCRETE PXT2222/A b7E D SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar e p ita xia l transistor, housed in a SO T89 envelope. I t is intended fo r sw itching and linear applications. The co m p le m e n tary ty p e is P X T 2 9 0 7 /A .


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    PXT2222/A PXT2907/A. PXT2222 PXT2222A PXT2222 PXT2222A PDF

    marking bt5

    Abstract: MMST2907A PN2907A RXT2907A SST2907A T106 T116 UMT2907A
    Text: Transistors PNP Medium Power Transistor Switching I UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A •F e a tu r e s 1 ) BV ceo< —40V ( lc = —10mA) 2 ) Complem ents the UM T2222A/SST2222A/M M ST2222A/ RXT2222A/PN2222A. •E x te r n a l dim ensions (Units : mm)


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    UMT2907A SST2907A/MMST2907A RXT2907A PN2907A UMT2222A/SST2222A/MMST2222A/ RXT2222A/PN2222A. SST2907A MMST2907A marking bt5 PN2907A T106 T116 PDF

    N2222A

    Abstract: st2222A RXT2222A st2222 N2222 MMST2222A PN2222A SST2222A T10B UMT2222A
    Text: Transistors i NPN Medium Power Transistor Switching U M T2222A /SS T2222A/M M S T2222A/R XT2222A/P N 2222A •E x te r n a l dimensions (Units : mm) • Features 1 ) B V ceo < 4 0 V (lc = 1 0 m A ) UM T2222A 2 ) Complements the UMT2907A/SST2907A/MMST2907A


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    MT2222A/SST2222A/M ST2222A/RXT2222A/P N2222A UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. UMT2222A SST2222A MMST2222A RXT2222A PN2222A N2222A st2222A st2222 N2222 PN2222A T10B PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 NPN Medium Power Transistor Switching I UMT4401 /SST4401 /MMST4401 /2N4401 •Features •E xternal dimensions (Units : mm) 1 ) BV ceo< 40V (lc = 1 m A ) 2 ) Complements the UMT4403/SST4403/MMST4403/PN4403


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    UMT4401 SST4401 MMST4401 /2N4401 /SST4401 /MMST4401 UMT4403/SST4403/MMST4403/PN4403 T4401 PDF

    st2222a

    Abstract: RXT2222A st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR sst2222a pn 2222a
    Text: Transistors I NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A •Features •External dimensions (Units : mm) 1 } B V ceo< 4 0 V ( ¡c ~ 1 0 rn A ) 2 ) Com plem ents the U M T 2907A /S ST2907A /M M ST2907A /RXT2907A/PN 2907A.


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    2222A/SST2222A/MMST2222A/RXT2222A/PN2222A ST2907A /RXT2907A/PN UMT2222A SST2222A MMST2222A RXT2222A PN2222A T2222A st2222a st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR pn 2222a PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    ferranti

    Abstract: FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
    Text: FERRANTI semiconductors FMMT-A20 NPN S ilico n Planar Small Signal Transistor D E S C R IP T IO N These devices ere intended for sm all and m edium signal am plification applications from d.c. to radio frequencies. Encapsulated in the popular S O T -23 package these devices


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    FMMT-A20 OT-23 FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J BCX71K ferranti FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 PDF

    TRANSISTOR BD 136

    Abstract: 02E-08
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF859S NPN Silicon RF Pow er Transistor D esig ned for 2 4 Volt U H F la rg e -s ig n a l, com m on em itter, class A linear amplifier applications in industrial and com m ercial equipm ent operating in the


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    MRF859S TRANSISTOR BD 136 02E-08 PDF

    MRF660

    Abstract: MRF860 rf8602 RF86 TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor D esigned for 24 Volt UHF la rg e -s ig n a l, com m on em itter, class A linear am plifier applications in industrial and com mercial equipment operating in the range ot 8 0 0 -9 6 0 MHz.


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    RF860 MRF860 MRF660 rf8602 RF86 TRANSISTOR BD 136 PDF

    SOT-23 EBC

    Abstract: ZD 103 ma transistor marking code 7E SOT-23 TRANSISTOR a43 ferranti marking AG SOT 23 transistor sot-23 Marking AR BSS65 BSS65R BCW30
    Text: FERRANTI i semiconductors BSS65 P N P S i l i c o n Plana r Hi gh Sp e e d S w i t c h i n g Transistor DESCRIPTION These devices are intended for use in high speed switchllng and high frequency amplifier applications. Encapsulated in the popular SOT-23 package, those


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    BSS65 OT-23 BSS65 Colle00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B SOT-23 EBC ZD 103 ma transistor marking code 7E SOT-23 TRANSISTOR a43 ferranti marking AG SOT 23 transistor sot-23 Marking AR BSS65R BCW30 PDF

    kn sot23

    Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
    Text: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices


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    BSV52 OT-23 BSV52 Volt00/300 FMMT2222 FMMT2369A FMMT2369 BSS82B kn sot23 sot-23 Marking KN A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR PDF

    SST222A

    Abstract: MMST2222A PN2222A SST6838 SST6839 T116
    Text: Transistors SST6838 NPN General Purpose Transistor SST6838 • E x t e r n a l d im e n s io n s U n its : m m • F e a tu re s 1 ) BVceo minimum is 40V (lc = 1 m A ) 2 ) Complements the SST6839. SST6838 ,1.9±0.2 10.950.95 • P a c k ag e , m a rk in g , and p a c k a g in g s p e c ific a tio n s


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    SST6838 SST6839. 10mA/0 VCE-12V 100MHz UMT222A SST222A MMST2222A PN2222A SST6838 SST6839 T116 PDF

    mrf857

    Abstract: RF857 mrf857s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF857 MRF857S NPN Silicon RF Power Transistor D e s ig n e d to r 2 4 V o lt U H F la rg e -s ig n a l, c o m m o n e m itte r, c la s s A lin e a r a m p lifie r a p p lica tio n s in in d u stria l a n d co m m e rcia l e q u ip m e n t o p e ra tin g in the


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    MRF857 RF857 MRF857S PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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