Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are
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MMDT8150
MMDT8150
MMDT8150L-AL6-R
MMDT8150G-AL6-R
MMDT8150L-AL6-R
OT-363
QW-R218-017
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PDF
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DSA00897
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are
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Original
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MMDT8150
MMDT8150
MMDT8150L-AL6-R
MMDT8150G-AL6-R
OT-363
QW-R218-017
DSA00897
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PDF
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T8550
Abstract: T8050 transistor t8050 transistor NPN TO-92 2W
Text: Preliminary Specification RCL Semiconductors Ltd. T8050 NPN Medium Power Transistor GENERAL DESCRIPTION T8050 is NPN medium power transistor fabricated on the epitaxial silicon wafers. It is complimentary to T8550. It can be widely used in audio amplifiers and switching.
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T8050
T8050
T8550.
T8550
To-92
100mA
800mA
800mA,
T8550
transistor t8050
transistor NPN TO-92 2W
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PDF
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marking CODE N4
Abstract: npn 8055 NXP Transistor standard marking
Text: SO T8 9 BFQ540 NPN wideband transistor Rev. 05 — 21 March 2013 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent
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BFQ540
BFQ540
marking CODE N4
npn 8055
NXP Transistor standard marking
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MARKING CODE SMD IC
Abstract: No abstract text available
Text: 83B PMBT3904MB SO T8 40 V, 200 mA NPN switching transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted Device SMD plastic package.
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PMBT3904MB
OT883B
PMBT3906MB.
AEC-Q101
MARKING CODE SMD IC
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PDF
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T8550
Abstract: T8050 transistor t8050
Text: Preliminary Specification RCL Semiconductors Ltd. T8050-1 NPN Medium Power Transistor GENERAL DESCRIPTION T8050-1 is NPN medium power transistor fabricated on the epitaxial silicon wafers. It is complimentary to T8550-1. It can be widely used in audio amplifiers and switching.
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T8050-1
T8050-1
T8550-1.
T8550-1
800mA
800mA,
T8550
T8050
transistor t8050
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device
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BSS87
SC-62)
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
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PMBT3906MB
DFN1006B-3
OT883B)
PMBT3904MB.
AEC-Q101
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PDF
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marking code a02 SMD Transistor
Abstract: MARKING CODE SMD IC A08 A08 smd transistor
Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
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PMBT3906MB
DFN1006B-3
OT883B)
PMBT3904MB.
AEC-Q101
marking code a02 SMD Transistor
MARKING CODE SMD IC A08
A08 smd transistor
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PDF
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TRANSISTOR SMD MARKING CODE 2x
Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
Text: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
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BC846BMB
DFN1006B-3
OT883B)
AEC-Q101
TRANSISTOR SMD MARKING CODE 2x
NXP SMD TRANSISTOR MARKING CODE
TRANSISTOR SMD MARKING CODE 2x I
TRANSISTOR SMD MARKING CODE t8
marking code BV SMD Transistor
TRANSISTOR SMD MARKING CODE ce
TRANSISTOR SMD MARKING CODE 41
BC846BMB
transistor smd code marking 102
NXP SMD ic MARKING CODE
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T8 9 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device
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BSS192
SC-62)
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Untitled
Abstract: No abstract text available
Text: 83B PDTC114TMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC114TMB
DFN1006B-3
OT883B)
PDTA114TMB.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PDTA124TMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA124TMB
DFN1006B-3
OT883B)
PDTC124TMB.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PDTA114TMB SO T8 PNP resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA114TMB
DFN1006B-3
OT883B)
PDTC114TMB.
AEC-Q101
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PDF
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PDTC143EMB
Abstract: PDTA143
Text: 83B PDTC143EMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = 4.7 k Rev. 1 — 7 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
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PDTC143EMB
OT883B
PDTA143EMB.
AEC-Q101
PDTC143EMB
PDTA143
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Untitled
Abstract: No abstract text available
Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.
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PXTA42
SC-62)
PXTA92.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PDTC124TMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC124TMB
DFN1006B-3
OT883B)
PDTA124TMB.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PDTC144TMB SO T8 NPN resistor-equipped transistor; R1 = 47 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC144TMB
DFN1006B-3
OT883B)
PDTA144TMB.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PDTC115TMB SO T8 NPN resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC115TMB
DFN1006B-3
OT883B)
PDTA115TMB.
AEC-Q101
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PDF
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2d SMD PNP TRANSISTOR
Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89
Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.
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PXTA92
SC-62)
PXTA42.
AEC-Q101
2d SMD PNP TRANSISTOR
TRANSISTOR SMD MARKING CODE 2d
smd transistor marking code 24
smd TRANSISTOR code marking 2d
SMD TRANSISTOR MARKING 2D
"marking Code" V2 sot89
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TRANSISTOR SMD MARKING CODE 1d
Abstract: SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code
Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.
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PXTA42
SC-62)
PXTA92.
AEC-Q101
TRANSISTOR SMD MARKING CODE 1d
SMD TRANSISTOR MARKING 1D
placeholder for manufacturing site code
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PDF
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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OCR Scan
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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NPN Transistor 5V DARLINGTON
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V Ces = KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic Collector Base Voltage
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OCR Scan
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KSP25/26/27
KSP25:
KSP26:
KSP27:
625mW
KSP25
KSP26
KSP27
NPN Transistor 5V DARLINGTON
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PDF
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transistor t8
Abstract: BCW69 MMBT5086 T8 SOT23
Text: SAMSUNG S EMICONDUCTOR IN C S BCW69 1 4 E D J l ? “11 5 D0G 751b 3 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T8=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage : Collector Current
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OCR Scan
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BCW69
MMBT5086
OT-23
100fiA,
transistor t8
T8 SOT23
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PDF
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