Untitled
Abstract: No abstract text available
Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch
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GA20SICP12-263
O-263-7L)
Applicatio0SICP12
GA20SICP12
833E-48
073E-26
752E-12
01E-09
50E-03
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Untitled
Abstract: No abstract text available
Text: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSA473
KSC1173
O-220
Co220
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KSA473
Abstract: KSC1173
Text: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSA473
KSC1173
O-220
KSA473
KSC1173
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Untitled
Abstract: No abstract text available
Text: KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W TC=25°C • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC1173
KSA473
O-220
Collector-O-220
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c1173Y
Abstract: C1173-Y TO220 Semiconductor Packaging C1173-O
Text: KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W TC=25°C • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC1173
KSA473
O-220
KSC1173
O-220-3
KSC1173OTU
KSC1173YTSTU
KSC1173YTU
c1173Y
C1173-Y
TO220 Semiconductor Packaging
C1173-O
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KSA473
Abstract: KSC1173
Text: KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W TC=25°C • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC1173
KSA473
O-220
KSA473
KSC1173
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KSA473
Abstract: No abstract text available
Text: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSA473
KSC1173
O-220
KSA473
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Untitled
Abstract: No abstract text available
Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD73
O-220
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KSD73
Abstract: No abstract text available
Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD73
O-220
KSD73
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Untitled
Abstract: No abstract text available
Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD73
O-220
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Untitled
Abstract: No abstract text available
Text: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features • VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch
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GA50JT06-258
O-258
GA50JT06
00E-47
26E-26
3989E-9
026E-09
00E-3
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D2406 transistor
Abstract: D2406 2SD2406
Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SD2406
D2406 transistor
D2406
2SD2406
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ISV50
Abstract: No abstract text available
Text: DTC125TU/DTC125TK/DTC125TS/DTC125TF DTC125TL/DTC125TA/DTC125TV h -y > v * £ /T ra n s is to rs D TC 125TU /D TC 125TK /D TC 125TS D TC 125TF/D TC 125TL/D TC 125TA DTC125TV suut-7>->'*$ ^ • », 'AM'O.Vvti-r 7 ^/Transistor Switch Digital Transistors Includes Resistors
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DTC125TU/DTC125TK/DTC125TS/DTC125TF
DTC125TL/DTC125TA/DTC125TV
125TU
125TK
125TS
125TF/D
125TL/D
125TA
DTC125TV
DTC125T
ISV50
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Untitled
Abstract: No abstract text available
Text: DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV h 7 > y ^ ^ / T ransistors D TC 314TK /D TC 314TS /D TC 314TF D TC 314TL/D TC 314TA /D TC 314TV ^ a — t - -f > v £ JU h 7 > V S U a r t i E 7 ^-/Transistor Switch Digital Transistors (Includes Resistors
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DTC314TK/DTC314TS/DTC314TF
DTC314TL/DTC314TA/DTC314TV
314TK
314TS
314TF
314TL/D
314TA
314TV
-71-JfJ
50mA/
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Untitled
Abstract: No abstract text available
Text: DTC143XU/DTC143XK/DTC143XS/DTC143XF DTC143XL/DTC143XA/DTC143XV / T ransistors D TC 143X U /D TC 143X K /D TC 143X S D TC 143XF/D TC 143XL/D TC 143X A DTC143XV xi h =7 X 9 X " j -^/Transistor Switch Digital Transistors Includes Resistors • ^•JK '+S ^/'D irfen sion s (U n it: mm)
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DTC143XU/DTC143XK/DTC143XS/DTC143XF
DTC143XL/DTC143XA/DTC143XV
143XF/D
143XL/D
DTC143XV
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Untitled
Abstract: No abstract text available
Text: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV /T ra n sisto rs D TC 144T U /D TC 144T K /D T C 144TS D TC 144T F/D TC 144TL/D TC 144TA DTC144T V 5s $h t-7 > 7- 9 mtnftM h > v * 9 7 ^/Transistor Switch Digital Transistors Includes Resistors)
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DTC144TU/DTC144TK/DTC144TS/DTC144TF
DTC144TL/DTC144TA/
DTC144TV
144TS
144TL/D
144TA
DTC144T
DTC144TL/DTC144TA/DTC144TV
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Untitled
Abstract: No abstract text available
Text: DTC123YU/DTC123YK/DTC123YS/DTC123YF DTC123YL/DTC123YA/DTC123YV N 7 > ' / 7 $ /T ran sisto rs D TC 123Y U /D TC 123Y K /D TC 123Y S D TC 123YF/D TC 123YL/D TC 123Y A DTC123YV 7 ^/Transistor Switch Digital Transistors Includes Resistors • £ W J 7 i£ E I/ D im e n s io n s (Unit : mm)
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DTC123YU/DTC123YK/DTC123YS/DTC123YF
DTC123YL/DTC123YA/DTC123YV
123YF/D
123YL/D
DTC123YV
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DTC114WS
Abstract: No abstract text available
Text: DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV Is ~7 > v 7. $ / T ransistors DTC114W U /D TC 114W K /D TC 114WS D TC 114W F/D TC 114W L/D TC 114WA DTC114W V ^-/Transistor Switch Digital Transistors Includes Resistors • f7 • $\-MT f& H /D im e n s io n s (Unit : mm)
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DTC114WU/DTC114WK/DTC114WS/DTC114WF
DTC114WL/DTC114WA/DTC114WV
DTC114W
114WS
114WA
DTC114WS
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Untitled
Abstract: No abstract text available
Text: DTC363TK/DTC363TS/DTC363TF DTC363TL/DTC363T A / DTC363TV h 7 > y ^ ^ / T ransistors D TC 363TK /D TC 363TS /D TC 363TF DTC363T L/D TC 363T A /D T C 363T V S i M h 7 > y 'X ^ y ^/Transistor Switch Digital Transistors (Includes Resistors) • T triE I/D im e n s io n s ( U n it: mm)
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DTC363TK/DTC363TS/DTC363TF
DTC363TL/DTC363T
DTC363TV
363TK
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363TF
DTC363T
DTC363TL/DTC363TA/DTC363TV
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SI-8020
Abstract: str7103 ic 8022 SI 122 D transistor 152 M SI-8021 STR7003 SI-8023 STR7101 SI-8020
Text: SWITCHING-TYPE 2-PACK TYPE REGULATORS M axim um Ratings (TA=25°C) Type No. Power Transistor Collector Current Power Dissipation W ithstand Voltage (V) Ic (A) 60 (peak 7.5) 60 (peak 15) STR7001 Operating Temperature (Tc=25°C) (Tc) PD (W) Ta (“ C) 100
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STR7001
STR7002
STR7003
STR7101
STR7102
STR7103
SI-8020
SI-8021
SI-8022
SI-8023
ic 8022
SI 122 D
transistor 152 M
STR7101 SI-8020
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max
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O-218
C67078-S3113-A2
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Untitled
Abstract: No abstract text available
Text: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter
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DTA144VU
TA144VKA
TA144VSA
DTA144VUA
DTA144VKA
DTA144VSA
0Dlb713
O-220FN
O-220FN
O220FP
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marking tA2
Abstract: No abstract text available
Text: D TA 144V U A / D TA 144V K A / D TA 144VS A Transistors D TC 144V U A / D TC 144V K A / D TC 144V S A I Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA •F eatures 1 ) Built-in bias resistors enable the configuration of an inverter
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144VS
DTA144VKA
144VSA
DTA144VUA
DTA144VSA
-698-C
marking tA2
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Untitled
Abstract: No abstract text available
Text: o re TIP31C NPNEXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The U TC TIP31C is a NPN expitaxial planar transistor, designed fo r using in general purpose am plifier and switching applications. FEATURE ‘ C om plem ent to tip32C
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TIP31C
TIP31C
tip32C
QW-R203-010
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