capacitor 104 PF disc
Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
Text: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile
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BLU30/28
BLU30/28
OT119)
capacitor 104 PF disc
transistor T43
B52 transistor
transistor d 1991 ar
D 1991 AR
apx 188
Transistor 5331
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PDF
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MSA035
Abstract: BFQ246 MSB002
Text: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.
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OT223
7110fl2b
BFQ246
MSA035â
OT223.
711005t.
MSA035
BFQ246
MSB002
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PDF
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BUK543
Abstract: BUK543-100A BUK543-100B
Text: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor
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711065b
BUK543-100A/B
-SOT186
BUK543
BUK543-100A
BUK543-100B
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PDF
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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PDF
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NEC JAPAN 237 521 02
Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Text: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART
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Original
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2SC5015
2SC5015-T1
2SC5015-T2
05Special:
NEC JAPAN 237 521 02
3563 1231
2SC5014
2SC5015
2SC5015-T1
2SC5015-T2
t83 230 02
TD-7938
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PDF
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TEA2019
Abstract: NTCC TEA2018A ic 810 pin diagram
Text: SGS-THOMSON TEA2019 I CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH ING TRANSISTOR ■ POSITIVE AND NEGATIVE OUTPUT CUR RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS
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TEA2019
14-pin
TEA2018A
15kHz
155Vrms<
VacS250Vrms
7TSTE37
NTCC
ic 810 pin diagram
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PDF
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2SK1294
Abstract: NEC 41-A 002 TD-7594 2SK1294 NEC MEI-1202 TEA-1035
Text: NEC ^•SESSE DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1294 is N-channel M O S Field Effect Transistor de PACKAGE DIMENSIONS in millimeters signed fo r solenoid, m otor and lam p driver.
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2SK1294
IEI-1209)
NEC 41-A 002
TD-7594
2SK1294 NEC
MEI-1202
TEA-1035
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PDF
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Untitled
Abstract: No abstract text available
Text: bb53T31 DD25bS3 ITfl H A P X N AMER PHILIPS/DISCRETE BST84 b?E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.
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bb53T31
DD25bS3
BST84
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PDF
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BST84
Abstract: z940 w200V
Text: • N bbSBTBl AMER DDESb53 ITß *APX PHILIPS/DISCRETE b?E BST84 T> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.
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bb53T31
DDESb53
BST84
Z94045
RDSonat25Â
BST84
z940
w200V
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PDF
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tsl-3
Abstract: TD6380 TD7614F 28X4
Text: TO SH IBA _ TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D7614 F 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor.
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TD7614F
TD6380
25kHz,
50kHz
20-pin
25kHz
tsl-3
TD7614F
28X4
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PDF
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Untitled
Abstract: No abstract text available
Text: TD7614F T O SH IB A TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T n 7 fi 1 A F • Krtr’ ■ m ■ ■ 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor.
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OCR Scan
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TD7614F
TD6380
25kHz,
50kHz
20-pin
TD6380
01/iF
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PDF
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2SC3365 -TO3
Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Text: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.
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GD1377Ã
2SC4692
2SC4744
2SC4745
2SC4746
2SC4747
2SC4796
2SC4797
2SC4877
2SC4878
2SC3365 -TO3
2sc2820
2SB566
2SB566A
2SC2612
2SC2613
2SC2816
2SC2898
2SC2899
2SC2979
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PDF
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2sc2899 transistor
Abstract: 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979 2SD781
Text: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.
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OCR Scan
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GD1377Ã
2SC4744
2SC4745
2SC4746
2SC4747
2SC4796
2SC4797
2SC4877
2SC4878
2SC4879
2sc2899 transistor
2SB566
2SB566A
2SC2612
2SC2613
2SC2816
2SC2898
2SC2899
2SC2979
2SD781
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PDF
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3 terminal 4mhz crystal oscillator
Abstract: TD7614F comparator 12v 10bit TD6380 28x4
Text: TO S H IB A TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D 7 61 4 F 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor. • Built-in tuning amp (high withstanding voltage of 35V).
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TD7614F
TD6380
25kHz,
50kHz
20-pin
25kHz
3 terminal 4mhz crystal oscillator
TD7614F
comparator 12v 10bit
28x4
|
PDF
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comparator 12v 10bit
Abstract: TD6380 TD7614F td7614 th crystal oscillator
Text: TO S H IBA TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D 7 61 4 F 3-W IRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor. • Built-in tuning amp (high withstanding voltage of 35V).
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TD7614F
TD6380
25kHz,
50kHz
20-pin
25kHz
01//F
comparator 12v 10bit
TD7614F
td7614
th crystal oscillator
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PDF
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
|
PDF
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m54517p
Abstract: M54517 3e tRANSISTOR mitsubishi 7 pin 5v relay NO DARLINGTON SINK DRIVER
Text: fciBE • b 2 4 =]fl5 7 M IT S U B IS H I □ D m 'ìb 'ì D GT L In I T 3 TD7 MI T SU BI SH I BIPOLAR DIGITAL ICs M 54517P LO G IC 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M54517P, 7-channel sink driver, consists of 14 NPN tran PIN CONFIGURATION (TOP VIEW)
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M54517P
400mA
M54517P,
400mA
M54517P
M54517
3e tRANSISTOR
mitsubishi 7 pin 5v relay NO
DARLINGTON SINK DRIVER
|
PDF
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NEC 41-A 002
Abstract: 2SK1294 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC ^•SESSE DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET
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OCR Scan
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2SK1294
2SK1294
IEI-1209)
NEC 41-A 002
MEI-1202
TEA-1035
|
PDF
|
nec 2501
Abstract: TEA-1035 2SK1294 MEI-1202 nec 2702
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK1294
2SK1294
IEI-1209)
nec 2501
TEA-1035
MEI-1202
nec 2702
|
PDF
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2SC3544
Abstract: IC sn 74 ls 2000
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry
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NE944
IS12I
IS12S21I
b427525
00L5770
2SC3544
IC sn 74 ls 2000
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PDF
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LINEAR/615/OS/LM01A/TC55417P/hexfet power mosfets international rectifier
Abstract: No abstract text available
Text: International S Rectifier Provisional Data Sheet No. PD-9.1401 REPETITIVE AVALANCHE AND dv/dt RATED IRHY9230CM JANSR2N7383 HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD -200 Volt, 0.8G, RAD HARD HEXFET Product Summary International Rectifier's P-Channel RAD HARD technology
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OCR Scan
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IRHY9230CM
JANSR2N7383
MIL-PRF-19500/615]
4A55452
LINEAR/615/OS/LM01A/TC55417P/hexfet power mosfets international rectifier
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TO SH IBA BIPOLAR DIGITAL INTEGRATED CIRCUIT T D 76 14 F DATA SILICON MONOLITHIC 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system softw are-com patible w ith TD6380 series . • Built-in 4-band switch transistor.
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OCR Scan
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TD6380
25kHz,
50kHz
20-pin
TD6380
TD7614F
7614F-
OP20-P-300-1
59TYP
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PDF
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