transistor 431A
Abstract: 431a WPT-431A transistor 431A DATASHEET "photo transistor" npn photo transistor counters ic 431-A
Text: Waitrony Photo Transistor 2-03-02-12 Module No.: WPT-431A 1. General Description: Dimensions The WPT-431A is a high sensitivity NPN silicon phototransistor mounted in a clear epoxy side looking package. It is compact, low profile and easy to mount. 2. Features
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WPT-431A
WPT-431A
1000Lux,
2000Lux
10mW/cm2
2856K
transistor 431A
431a
transistor 431A DATASHEET
"photo transistor"
npn photo transistor
counters ic
431-A
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wabash relay
Abstract: 1820-3145 1826-0346 Rohm op amp tkf 28 1826-0180 Caddell-Burns Manufacturing e1420 5053HD619K0F GRM3195C1H102JD01D
Text: Agilent E1420B Component Level Information E1420B Universal Counter Component Level Information Information in this packet applies to the following assemblies: 1. E1420-68006 PC Assembly VXI Assembly 2. 53310-60008 PC Assembly (Input Board) The following is included in this packet:
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E1420B
E1420B
E1420-68006
E1420-68006
wabash relay
1820-3145
1826-0346
Rohm op amp
tkf 28
1826-0180
Caddell-Burns Manufacturing
e1420
5053HD619K0F
GRM3195C1H102JD01D
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pbss4160dpn
Abstract: transistor smd marking 431.k
Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
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PBSS4160DPN
OT457
SC-74)
PBSS4160DPN
transistor smd marking 431.k
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2n3055 motorola
Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,
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1PHX11122C
2n3055 motorola
tip122 tip127 audio amp schematic
transistor equivalent book 2sc2238
IR640
transistor motorola 40411
TRANSISTOR REPLACEMENT GUIDE
ir431
motorola AN485
C2688
2SA1046
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IBJT
Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Text: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but
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AN9319
IBJT
SCR Handbook, General electric
AN9319
Rudy Severns
5 hp DC motor speed control using scr
d50026
"General Electric SCR Manual" 6th
AN918 MOTOROLA
14v 10A mosfet
TA84-5
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AN569
Abstract: MTW20N50E
Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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MTW20N50E/D
O-247
AN569
MTW20N50E
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IBJT
Abstract: General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N
Text: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS
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AN9319
IBJT
General Electric SCR Manual 6th edition
AN9319
TA84-5
"General Electric SCR Manual" 6th
Rudy Severns
d50026
AN918 MOTOROLA
Pelly
7402N
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AN569
Abstract: MTY20N50E
Text: MOTOROLA Order this document by MTY20N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY20N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 500 VOLTS
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MTY20N50E/D
MTY20N50E
MTY20N50E/D*
AN569
MTY20N50E
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S 170 MOSFET TRANSISTOR
Abstract: MTW20N50E-D TO-247 Package
Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM
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MTW20N50E/D
O-247
MTW20N50E
MTW20N50E/D*
TransistorMTW20N50E/D
S 170 MOSFET TRANSISTOR
MTW20N50E-D
TO-247 Package
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Untitled
Abstract: No abstract text available
Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
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SC-74)
PBSS4160DPN
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PBSS4160DPN
Abstract: transistor smd marking 431.k MOSFET TRANSISTOR SMD MARKING CODE B4
Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
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PBSS4160DPN
OT457
SC-74)
PBSS4160DPN
transistor smd marking 431.k
MOSFET TRANSISTOR SMD MARKING CODE B4
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transistor bt 808
Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
Text: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS
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IBJT
Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
Text: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,
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smd transistor marking A5
Abstract: SC74 marking 345 transistor smd code marking 431 PBSS4160DS PBSS5160DS
Text: PBSS5160DS 60 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 28 June 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
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PBSS5160DS
OT457
SC-74)
PBSS4160DS.
smd transistor marking A5
SC74 marking 345
transistor smd code marking 431
PBSS4160DS
PBSS5160DS
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transistor tt 2222
Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Text: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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BLY92C/01
OT122F
PINNING-SOT122F_
MBB012
transistor tt 2222
C7f TRANSISTOR
BLY92C
BLY92C/01
BLY92
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UI132
Abstract: 2SC4425
Text: Ordering n u m b e r:EN 2848 _ 2 S C 4 4 2 5 NPN Triple Diffused Planar Silicon Transistor Sw itching R egulator A pplications F eatures . High breakdown voltage, high reliability • Fast switching speed tf: 0.1 ps typ • WideASO • Adoption of MBIT process
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2SC4425
UI132
2SC4425
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2222 031 capacitor philips
Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
Text: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF348
711005b
2222 031 capacitor philips
TRANSISTOR 43IL
271 Ceramic Disc Capacitors
BLF348
015 capacitor philips
2222 032
capacitor MKT Philips
VCB228
Philips 2222 capacitor
2222 035 electrolytic capacitor
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sd 431 transistor
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in
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bb53T31
PINNING-SOT186
BUK445-100A/B
BUK445
-100A
-100B
K445-100A/B
IE-02
1E-03
1E-04
sd 431 transistor
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BLV97
Abstract: D-10 ferroxcube wideband hf choke
Text: N AMER PH I L I P S / D I S C R E T E - " • w vu ObE D w I ■ w b t,S3 T 3 1 D1 3 L 2 fi •9 N O R T H / A M P E R E X / D I S C R ETE DLE D BLV97 'TZ33~J U.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base
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0013L2fl
BLV97
OT-171
BLV97
D-10
ferroxcube wideband hf choke
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.
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bbS3T31
BLU99
BLU99/SL
OT122A)
BLU99/SL
OT122D)
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE • UVU DbE D V I ■ W bt,53T31 0013b5fi 1 ^ ^ '» NORTH/AMPEREX/DISCRETE OLE D BLV97 _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.
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53T31
0013b5fi
BLV97
OT-171
BLV97
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BUK452-50A
Abstract: BUK452-50B T0220AB
Text: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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002D43G
BUK452-50A
BUK452-50B
BUK452
ID/100
T0220AB
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BLV98
Abstract: No abstract text available
Text: 41E D PHILIPS INTERNATIONAL • 711002h 002740b b H P H I N '' BLV98 r-33-n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 M Hz communications band.
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711002h
002740b
BLV98
r-33-a
OT-171
7Z9433B
BLV98
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mje 3001
Abstract: MJ3583 2N3583 MOTOROLA MJ3585 MJ3701 2N3583 MJ2253 MJ3760 MJ3761 transistor SE 431
Text: MJ3583 thru MJ3585 SILICON MJ3701 (SILICON) p o r specifications, §ee 2N3583 Data. For Specifications, See MJ2253 Data. MJ3760 (silicon) MJ3761 H O RIZO N TAL D E FL E C T IO N SILICO N TR A N SISTO R S 6.0/8.0 AM PERE T R IP L E D IFF U S E D POWER TR A N S IS TO R S
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MJ3583
MJ3585
2N3583
MJ3701
MJ2253
MJ3760
MJ3761
MJ3760
MJ3761
16-COLLECTOR-BASE
mje 3001
2N3583 MOTOROLA
MJ3585
MJ3701
transistor SE 431
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