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    TRANSISTOR TIC 2250 Search Results

    TRANSISTOR TIC 2250 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIC 2250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT 542 seven segment display data sheet

    Abstract: substitute diode PH 33D stk 3 channel class h audio amp PSB 21473 F INCA-D - PSB 21473 PIN DIAGRAM OF 7 segment display LT 542 MIP2 g4 Md 7 segment display LT 542 as3 SMD Transistor CBF 423
    Text: D at a S h e e t , D S 1 , M ar . 2 00 3 INCA-D Infineon Codec with DASL Transceiver and embedded Microcontroller Featuring Acoustic Echo Cancellation PSB 21473 Version 1.3 Wire d Communications N e v e r s t o p t h i n k i n g . INCA-D PSB 21473 • Data Sheet


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    PDF GPM05247 LT 542 seven segment display data sheet substitute diode PH 33D stk 3 channel class h audio amp PSB 21473 F INCA-D - PSB 21473 PIN DIAGRAM OF 7 segment display LT 542 MIP2 g4 Md 7 segment display LT 542 as3 SMD Transistor CBF 423

    transistor tic 2250

    Abstract: tic 2250
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRFQ17 The RF Line DIE S O U R C E SA M E AS BFQ17 IMPN Silicon High Frequency Transistor lc = 300 m A S U R F A C E M OUNT HIGH FR EQ U EN C Y TR AN SISTO R NPN SILICON . . . designed for amplifier, oscillator or frequency multiplier applications in industrial


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    PDF MRFQ17 BFQ17 transistor tic 2250 tic 2250

    transistor tic 2250

    Abstract: 4010R BUZ64-T
    Text: SIEMENS SIPMOS Power MOS Transistor BUZ 64 VDS lD = 400 V = 1 1 .5 A ^ D S o n = 0.40 Q • N channel • E nhancem ent mode • A valanche-proof • Package: T O -2 04 A A (T O -3 )') Type Ordering code BUZ 64 C 6 70 78-A 10 1 7-A2 Maximum Ratings Parameter


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    B897

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES LIMÊTERS N. WIN MAX MAX 8 38 B 89 7 G2 REF 8 64 T h e H I 1C 1, H I 1C 2 a n d H I 1C3 a re g alliu m a rs e n id e , in fra r e d e m ittin g d io d e s co u p le d w ith lig h t activ ated s ilic o n c o n tro lle d


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    PDF H11C1, H11C2, H11C3 B897

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    TESLA transistor

    Abstract: magnetic flux density for different material TESLA Manufacturer 106B TL176C tesla switch
    Text: LINEAR INTEGRATED CIRCUITS TYPE TL176C NORMALLY OFF SILICON HALL-EFFECT SWITCH B U L L E T I N N O . D L -S 1 2 7 2 9 , O C T O B E R 1 9 7 9 • Magnetic-Field-Sensing Hall-Effect Input • O n-O ff Hysteresis • Small Size • Solid-State Technology •


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    PDF TL176C TL176C TESLA transistor magnetic flux density for different material TESLA Manufacturer 106B tesla switch

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    Abstract: No abstract text available
    Text: LINEAR INTEGRATED CIRCUITS TYPE TL176C NORMALLY OFF SILICON HALL-EFFECT SWITCH B U L L E T I N N O . D L -S 1 2 7 2 9 , O C T O B E R 1 9 7 9 • Magnetic-Field-Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output


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    PDF TL176C

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    1XFH12n100

    Abstract: transistor 13n80
    Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure


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    PDF 4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    si9663

    Abstract: si96
    Text: BD244, BD244A, BD244B, BD244C HARRIS SEMICOND SECTOR File Number SbE D • 674 4302271 DOMObTQ ÔDT « H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ier and High-Soeed-Switching Applications Features: ■ 66 W at 25°C case temperature


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    PDF BD244, BD244A, BD244B, BD244C BD243, BD243A, BD243B, BD243C si9663 si96

    RCA8350B

    Abstract: No abstract text available
    Text: TEXAS I N S T R { OPT O> 8961726 ^2 TEXAS INSTR D eT | a T b l ? 2 b OPTO 6 2C D 0 BL TS 5 36952 TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP600, TIP601, TIP602


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    PDF TIP605, TIP606, TIP600, TIP601, TIP602 2N6053, 2N6054. RCA8350, RCA8350A, RCA8350B RCA8350B

    7400 logic gate ic

    Abstract: IC TTL 7400 4S00
    Text: Optoisolator Specifications H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H74A 1 provides logic-to-logic optical in terfa cin g o f T T L gates w ith guaranteed lev el com patibility in practical specified circuits. T h e


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    PDF H74A1 H74A1 7400 logic gate ic IC TTL 7400 4S00

    TIP107 Texas

    Abstract: No abstract text available
    Text: TEXAS INSTR -COPTO} "B 961726 b5 TEXAS IN S T R D eT| flit 1 75b Q03ba7t, 0 COPTOT 62C 3 6 8 7 6 TIP 105, TIP106, TIPI 07 P-N-P DARLINGTON CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIPIOO, T IP 101, TIP102


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    PDF Q03ba7t, TIP106, TIP102 -220AB T-33-31 SE9402 RCA8203B TIP105 TIP105, TIP107 Texas

    UGN-3040

    Abstract: ugn3040 Tesla transistor tesla switch TESLA Manufacturer Tesla sensor TL3040C magnetic flux density for different material D2903 direct replacement
    Text: ADVANCE INFORMATION TL3040C SILICON HALL EFFECT SWITCH D 2 9 0 3 , OCTOBER 1 9 8 5 LU PACKAGE TOP VIEW Magnetic-Field Sensing Hall-Effect Input O n -O ff Hysteresis Small Size k \ Standard Bipolar Technology Minimizes ESD Susceptibility lOL - • • 2 0 m A Min at V o l = 0 -4 V


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    PDF TL3040C D2903, UGN3040 TL3040C SLFS009 UGN-3040 ugn3040 Tesla transistor tesla switch TESLA Manufacturer Tesla sensor magnetic flux density for different material D2903 direct replacement

    TL311

    Abstract: tl111 LM111 LM311 LM311 and applications
    Text: TYPES TL111, TL311, TL311A JF E T- IN PU T DIFFERENTIAL COMPARATORS W IT H STROBES LINEAR INTEGRATED CIRCUITS B U L L E T IN N O . D L -S 1 2 7 3 7 , N O V E M B E R Strobe Capability Common-Mode Input Voltage Range Includes V c C — Designed to Replace LM 111 and LM 311


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    PDF TL111, TL311, TL311A LM111 LM311 TL311 tl111 LM311 LM311 and applications

    transistor tic 2250

    Abstract: lm 383 ic LM voltage regulators LM series voltage regulators
    Text: LINEAR INTEGRATED CIRCUITS SERIES LM340 POSITIVE-VOLTAGE REGULATORS D2332, SEPTEMBER 1977-REViSED MARCH 1983 3-Terminal Regulators • NOMINAL OUTPUT Output Current up to 1.5 A REGULATOR VOLTAGE • No External Components 5 V LM 340-5 • Internal Thermal Overload


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    PDF LM340 D2332, 1977-REViSED 11-ADJUSTABLE transistor tic 2250 lm 383 ic LM voltage regulators LM series voltage regulators

    2A20

    Abstract: No abstract text available
    Text: TEXAS INSTR -COPTO} " DE I f i ^ b l T E b S 9 6 1 7 2 6 TEXAS INSTR COPTO 62C 003t,fi54 3 36824 TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 4 0 W at 2 5 ° C Case Temperature 1 A Continuous Collector Current


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    PDF TIP47, TIP48, TIP49, TIP50 T0-22QAB 2A20

    texas instruments tip48

    Abstract: T0-22Q TIP50 Texas Instruments texas instruments tip47 texas instruments tip50 1N914 2N6127 TIP47 TIP48 TIP49
    Text: T E X A S I N S T R -COPTO} " ^ DlT^öTblTEb □□3LöS4 "6961726 TEXAS INSTR OPTO 62C 36824 TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS R E V IS E D O C TO BER 1 9 8 4 4 0 W at 2 5 ° C C a se Temperature 1 A Continuous Collector Current


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    PDF 003tià TIP47, TIP48, TIP49, TIP50 T0-22QAB TIP47 TIP48 TIP49 TIP50 texas instruments tip48 T0-22Q TIP50 Texas Instruments texas instruments tip47 texas instruments tip50 1N914 2N6127

    MGA231

    Abstract: c1718 transistor c1718 C1894 C2090 MCA230 MCA231 MCA255
    Text: GENL INSTRv OPTOELEK 88 DE | aSTOlää DDDSTDl a GENERAL INSTRUMENT PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 D ES C R IPTIO N P A C K A G E D IM EN SIO N S The M CA230, MCA231 and M C A 255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silico n


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    PDF MCA230 MCA231 MCA255 t3-56 C2090 C2084 MCA230, MCA255 c12b5 MGA231 c1718 transistor c1718 C1894 C2090

    ic 6116 from texas instruments

    Abstract: ma 6116 f6 transistor tic 2250 4016 static ram tms4016
    Text: MILITARY CM O S SMJ5517 2048 WORD BY 8-BIT STATIC RAM LSI DECEMBER 1 9 8 3 SMJ5517 . . . JD PACKAGE 1 TOP VIEW 2K X 8 Organization. Common I/O Single + 5 -V Supply • Fully Static Operation (No Clocks, No Refresh) A7 C 1 ^ 2 4 H vcc 23 ] A 8 22 U A 9 21 D W


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    PDF SMJ5517 24-Pin 600-M B8416. TC5517 54S/74S, 54LS/74LS 54ALS/74ALS SMJ5517 ic 6116 from texas instruments ma 6116 f6 transistor tic 2250 4016 static ram tms4016

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID 01E STATE D 19722 Optoelectronic Specifications_ HA R R I S S E M I C O N » SECTOR 37E D I T-V/-Ï 3 43G2571 0027104 0 • H A S Photon Coupled Isolator H74A1 G a A s In fr a r e d E m ittin g D io d e & N P N S ilic o n P h o to -T ra n s is to r


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    PDF 43G2571 H74A1 H74A1 74H00 74S00 92CS-42662 92CS-429S1

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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