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    TRANSISTOR TIP 127 Search Results

    TRANSISTOR TIP 127 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIP 127 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 transistor

    Abstract: TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121
    Text: TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: • Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage-VCEO sus = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126


    Original     		PDF TIP120, TIP125 TIP121, TIP126 TIP122, TIP127. tip122 transistor TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121

    C4547

    Abstract: broadcom 6358 BJT 2N2222 datasheet transistor smd za j1 npn smd 2n2222 smd npn bjt 2N2222 bjt 2n2222 J1 TRANSISTOR DIODE SOT-23 PACKAGE si3200 electrical drawing SI3200-KS
    Text: Si3232 DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING Features Ideal for customer premise applications Low standby power consumption: <65 mW per channel Internal balanced ringing to 65 Vrms Software programmable parameters: Ringing frequency, amplitude,


    Original     		PDF Si3232 GR-909 Hz/16 C4547 broadcom 6358 BJT 2N2222 datasheet transistor smd za j1 npn smd 2n2222 smd npn bjt 2N2222 bjt 2n2222 J1 TRANSISTOR DIODE SOT-23 PACKAGE si3200 electrical drawing SI3200-KS

    C4547

    Abstract: BCM3351 ProSLIC BCM3352 Si3232 SOIC-16 TQFP-64 smd D11 SI3052 tqfp 64 thermal resistance
    Text: Si3232 PR ELIM IN AR Y DATA SH EET DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING Features Ideal for customer premise applications Low standby power consumption: <50 mW per channel Internal balanced ringing to 65 Vrms Software programmable parameters: Ringing frequency, amplitude, cadence,


    Original     		PDF Si3232 Hz/16 C4547 BCM3351 ProSLIC BCM3352 Si3232 SOIC-16 TQFP-64 smd D11 SI3052 tqfp 64 thermal resistance

    N681622

    Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
    Text: N681386/87 Single Programmable Extended Codec/SLCC 1. DESCRIPTION The N681386/87, implements a single channel FXS telephone line interface optimized for short loop applications. It integrates SLCC Subscriber Line Control Circuit functionality with a programmable CODEC and a DC/DC controller.


    Original     		PDF N681386/87 N681386/87, 16-bit N681622 W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg

    Untitled

    Abstract: No abstract text available
    Text: Si3232 D UAL P R O G R A M M A B L E C M O S S L I C WITH L I N E M O N I T O R I N G Features  Ideal for customer premise applications  Low standby power consumption: <65 mW per channel   Internal balanced ringing to 65 Vrms   Software programmable parameters:


    Original     		PDF Si3232

    SI3201-FS

    Abstract: transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Performs all BORSCHT functions  Software-programmable signal generation and audio processing Software-programmable internal balanced


    Original     		PDF Hz/16 Si3210) 16-bit SI3201-FS transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551

    Si3201-gs

    Abstract: dtmf fsk caller id D 1380 Transistor HC3110 ST 2n2222
    Text: S i 3 2 1 0 / S i 3 2 11 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 Si3201-gs dtmf fsk caller id D 1380 Transistor HC3110 ST 2n2222

    transistor dtx 360 mosfet

    Abstract: transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Hz/16 GR-909 transistor dtx 360 mosfet transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild

    Si3201-gs

    Abstract: transistor SMD 3906
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R I N G I N G / B A T T E R Y VO L TAG E G ENERATION Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 Si3201-gs transistor SMD 3906

    power BJT tip 122

    Abstract: Si3201-KS transistor equivalent 2n5551 CTX01-15 coiltronic SI3210M-FM 31353R-02 SI3201-FS si3210-ft SI3210FT
    Text: S i 3 2 1 0 / S i 3 2 11 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 16-bit power BJT tip 122 Si3201-KS transistor equivalent 2n5551 CTX01-15 coiltronic SI3210M-FM 31353R-02 SI3201-FS si3210-ft SI3210FT

    sot-23 marking code 2fn

    Abstract: transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Si3210) 90VPK sot-23 marking code 2fn transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120


    OCR Scan     		PDF TIP120/121/122 TIP122 TIP120 TIP121 LB 122 transistor LB 122 NPN TRANSISTOR

    LB 122 transistor

    Abstract: No abstract text available
    Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127


    OCR Scan     		PDF TIP125/126/127 TIP126 TIP127 TIP125 LB 122 transistor

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121
    Text: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag


    OCR Scan     		PDF TIP120/121 TIP125/126/127 TIP120 TIP121 TIP122 TIP121 O-220 LB 122 transistor LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122

    TIP177

    Abstract: LB 122 transistor TIP 126 tip127
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage :TIP125 Rating : TIP 126 ' TIP177 Collector Emitter Voltage


    OCR Scan     		PDF TIP125 TIP177 TIP126 TIP127 TI000 -100V, -12mA -20mA LB 122 transistor TIP 126

    Untitled

    Abstract: No abstract text available
    Text: P * FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA HP122 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Package: TO-220 * Complement to TIP 127 ABSOLUTE MAXIMUM RATINGS at T«ml^25°C C haracteiistk Symbol Rating Uitit


    OCR Scan     		PDF HP122 O-220 300uSJDuty 100mA

    LB 122 transistor

    Abstract: TRANSISTOR tip 126
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP I 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic C ollector-B ase Voltage: TIP125 : TIP126 : TIP127 C o lle cto r-E m itte r Voltage


    OCR Scan     		PDF TIP120/121/122 TIP125 TIP126 TIP127 LB 122 transistor TRANSISTOR tip 126

    TIP 122 transistor

    Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60


    OCR Scan     		PDF TIP120 TIP121 TIP120/121/122 TIP 122 transistor transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»


    OCR Scan     		PDF TIP125/126/127 TIP120 TIP121 TIP122 TIP121 TIP120/121/122 120ft LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip120 TIP 122 transistor TIP 122 transistor tip 122

    npn, transistor, sc 107 b

    Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
    Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.


    OCR Scan     		PDF TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C TIP31B npn, transistor, sc 107 b transistor TIP 31A TIP 31a Transistor TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor

    IP122

    Abstract: transistor darlington TIP-120 tip122c TIP120
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122


    OCR Scan     		PDF TIP120/121/122 TIP125/126/127 TIP120 TIP121 TIP122 IP122 transistor darlington TIP-120 tip122c TIP120

    PNP POWER TRANSISTOR T1P122

    Abstract: T1P122 TRANSISTOR tip122 TIP 122 transistor tip120 motorola TIP127 circuit TIP127
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ lc = 4.0 Adc • Coiiector-Emitter Sustaining Voltage — @ 100 mAdc


    OCR Scan     		PDF TIP120, TIP125 TIP121, TIP126 O-220AB TIP126 TIP127 TIP122 PNP POWER TRANSISTOR T1P122 T1P122 TRANSISTOR tip122 TIP 122 transistor tip120 motorola TIP127 circuit TIP127

    TIP308

    Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
    Text: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC


    OCR Scan     		PDF b3b7254 TIP29 T1P29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C TIP308 woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405

    T1P122

    Abstract: Transistor TL 31 AC PNP POWER TRANSISTOR T1P122 TIP12O T1P140 TIP120 TIP121 TIP125 TIP126 TIP127
    Text: TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS _ DECEMBER 1971 - REVISED MAY 1993 • Designed for Complementary Use with TIP125, TIP126 and TIP127 • 65 W at 25°C Case Temperature • 5 A Continuous Collector Current • Minimum hFE of 1000 at 3 V, 3 A


    OCR Scan     		PDF tip120, tip121, tip122 TIP125, TIP126 TIP127 O-220 TIP120 TIP121 T1P122 Transistor TL 31 AC PNP POWER TRANSISTOR T1P122 TIP12O T1P140 TIP125 TIP127