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    TIP31A

    Abstract: T1P31 T1P31B TIP31 TIP31B TIP31C TIP32 TIP32A TIP32B TIP32C
    Text: PANASONIC INDL/ELEK -CIO k ^ a a s s Goianas a 1EE D Silicon NPN Power Transistors r - 3 - / / 3 ¿TIP31A ttíP31B ilutes TO-220 Package Absolute Maximum Ratings Ta=25°C Symbol TIP31 T1P31A T1P31B TIP31C Unit Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF O-220 TIP31A ttlP31B TIP31 T1P31B TIP31C TIP32, TIP32A, TIP32B, T1P31 TIP31B TIP32 TIP32A TIP32B TIP32C

    npn, transistor, sc 107 b

    Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
    Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.


    OCR Scan     		PDF TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C TIP31B npn, transistor, sc 107 b transistor TIP 31A TIP 31a Transistor TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor

    T1P122

    Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
    Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400


    OCR Scan     		PDF 2SC3039 MJE13005 T1P49 MJE30SST TIP31A T1P41A TIP120 CIL4006 BD211 BD243 T1P122 T1P41C t1p41 T1P31 2SD880Y 2SD88D 2N529B

    Untitled

    Abstract: No abstract text available
    Text: TIP32F; 32AF TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 711002b 00434=10 210 M P H I N T -J 3 -I 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF TIP32F; TIP32BF; TIP32DF 711002b T1P31BF,

    T1P31DF

    Abstract: No abstract text available
    Text: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF TIP31F; TIP31BF; T1P31DF TIP32F, TIP32AF, TIP32BF, TIP32CF TIP32DF. TIP31F bb53331 T1P31DF

    T1P31

    Abstract: T1P31A T1P31C T1P31B T-33-H TIP31 TIP31C TIP32 TIP32A TIP32B
    Text: PANASONIC INDL/ELEK {IC> t^ a a s a ooicmas ö 1EE D Silicon NPN Power Transistors r - 3 3 -// Ü P 31 A tT IP 31 B ;|P 3 t C TO-220 Package Absolute Maximum Ratings Ta=25°C Hem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF t1328sa DP1D12S T-33-H MP31B O-220 TIP31 T1P31A T1P31B TIP31C TIP32, T1P31 T1P31C T-33-H TIP32 TIP32A TIP32B

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    TlP31A

    Abstract: No abstract text available
    Text: PANASONIC INDL/ELEK {IC> t ^ a a s a ooicmas ö 1EE D Silicon NPN Power Transistors r - 3 3 - / / tlP31Ä ttlP31B; ;iP3tc TO-220 Package Absolute Maximum Ratings Ta=25°C Hem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF O-220 tlP31Ä ttlP31B; TIP31 T1P31A T1P31B TIP31C TIP32, TIP32A, TIP32B, TlP31A

    T1P31C

    Abstract: b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C
    Text: MIN MAX A B C E F G H J 14,42 9,63 3 ,56 K i M N 12,70 - 16.51 10.67 4,83 0 .9 0 1,40 3 ,68 2,79 3,43 0 ,56 14,73 6,35 2,92 DIM o f1 i| L D J g - 1,15 3,75 2,29 2,54 - 2,03 7 3 1,2 4 DEG TP-220 Power Package Transistors NPN Maximum Rating« Type No. Electrical Characteristics (Tas35*C, Unless Otherwise Specified)


    OCR Scan     		PDF TP-220 Tas35 T1P122 TIP130 TIP131 TIP132 T1P31C b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C

    T1P31

    Abstract: texas instruments tip31 T1P30C Texas Instruments TIP31C TIP31C T1P-31 transistor tip31 TIP31 texas instruments tip31a TIP30
    Text: TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS JULY 1968 - R EVISED MAY 1995 • Designed for Complementary Use with the TIP29 Series • 30 W at 25°C Case Temperature TO -220 PACKAGE TOP VIEW • 1 A Continuous Collector Current BC • 3 A Peak Collector Current


    OCR Scan     		PDF T1P31, TIP31 T1P31B, TIP31C O-220 TIP29 TIP30 TIP30A TIP30B T1P30C T1P31 texas instruments tip31 Texas Instruments TIP31C T1P-31 transistor tip31 texas instruments tip31a

    31AF

    Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
    Text: TIP31F; 31AF TIP31BF; 31 CF T1P31DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF TIP31F; TIP31BF; T1P31DF TIP32F, TIP32AF, TIP32BF, TIP32CF TIP32DF. TIP31F bS3T31 31AF 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP32BF

    T1P122

    Abstract: T1P41C BD211 T1P41A BU40S t1p41 T1P121 T1P49 2SC3039 BU806
    Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s No. 2SC3039 MJE13005 TIPSO v CB0 (V) Min 500 700 500 VCEO (V) Min 400 400 400 v EB0 (V) Min 7 9 5 Electrical C h ara cte ristics PD (W) 8 Tc=25°C 50 _ | f l Typs 10 e vC8 e "FE (V) Min 400 75 40 ic


    OCR Scan     		PDF 2SC3039 MJE13005 T1P49 MJE340T T1P48 bd243a MJE3055T tip31a t1p41a tip120 T1P122 T1P41C BD211 BU40S t1p41 T1P121 BU806

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    T1P31A

    Abstract: tip318 T1P31 tip318 transistor
    Text: TIP31, TIP31A, TIP318, TIP31C N PN SILICON PO W ER TRANSISTORS Copyright Q 1997, Power Innovations Limited, UK_ JULY 1968 - REVISED MARCH 1997 • Designed for Complementary Use with the TIP32 Series • 40 W at 25°C Case Temperature •


    OCR Scan     		PDF TIP31, TIP31A, TIP318, TIP31C TIP32 O-220 TIP31 TIP31A TIP31B T1P31A tip318 T1P31 tip318 transistor