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    TRANSISTOR TIP 142 Search Results

    TRANSISTOR TIP 142 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIP 142 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CTX01-15275

    Abstract: GOERTZEL ALGORITHM fsk SOURCE CODE SI3201-GS Si3201-KS BCM11xx dtmf fsk caller id BCM33XX BCM3351 BCM63 ProSLIC
    Text: Si3230 P R O SLIC P R O G R A M M A B L E CMOS SLIC W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Software Programmable SLIC with codec interface Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3230 Hz/16 CTX01-15275 GOERTZEL ALGORITHM fsk SOURCE CODE SI3201-GS Si3201-KS BCM11xx dtmf fsk caller id BCM33XX BCM3351 BCM63 ProSLIC

    N681622

    Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
    Text: N681386/87 Single Programmable Extended Codec/SLCC 1. DESCRIPTION The N681386/87, implements a single channel FXS telephone line interface optimized for short loop applications. It integrates SLCC Subscriber Line Control Circuit functionality with a programmable CODEC and a DC/DC controller.


    Original     		PDF N681386/87 N681386/87, 16-bit N681622 W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg

    SI3201-FS

    Abstract: transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Performs all BORSCHT functions  Software-programmable signal generation and audio processing Software-programmable internal balanced


    Original     		PDF Hz/16 Si3210) 16-bit SI3201-FS transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551

    Si3201-gs

    Abstract: dtmf fsk caller id D 1380 Transistor HC3110 ST 2n2222
    Text: S i 3 2 1 0 / S i 3 2 11 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 Si3201-gs dtmf fsk caller id D 1380 Transistor HC3110 ST 2n2222

    transistor dtx 360 mosfet

    Abstract: transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Hz/16 GR-909 transistor dtx 360 mosfet transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild

    Si3201-gs

    Abstract: transistor SMD 3906
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R I N G I N G / B A T T E R Y VO L TAG E G ENERATION Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 Si3201-gs transistor SMD 3906

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 45F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 140F/141F/142F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 45F/146F/147F 140F/141F/142F TIP145F TIP146F TIP147F

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 40F/141 F/142F 145F/146F/147F TIP141T TIP142T TIP140T 41HP1

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 40F/141 F/142F 145F/146F/147F TIP141T TIP142T TIP140T

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 45F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P F C om plem ent to TIP 140F/141F/142F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 45F/146F/147F 140F/141F/142F TIP145F TIP146F TIP147F

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A TO -3P MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE y . ' . W C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP142F TIP141F TIP140F

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45/146/147 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P \A \ wh C om plem ent to TIP 140/141/142 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP147 TIP146 TIP145 TIP145/146/147

    142 TRANSISTOR

    Abstract: TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F
    Text: NPN EPITAXIAL TIP140/141 /142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ V ce = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P • C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP140/141 TIP145/146/147 TIP140 TIP141 TIP142 142 TRANSISTOR TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F

    tip 147 TRANSISTOR

    Abstract: tip 145 transistor transistor tip 142 TIP14 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V ce = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Com plement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP145/146/147 TIP140/141/142 TIP14 TIP147 I45/146/147 tip 147 TRANSISTOR tip 145 transistor transistor tip 142 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146

    tip 147 transistor

    Abstract: transistor tip 142 npn tip tip 141 transistor tip 35 c transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN h FE = 1000 @ V ce * -4V , IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to TIP145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP145/146/147 --20mA, TIP140/141A142 tip 147 transistor transistor tip 142 npn tip tip 141 transistor tip 35 c transistor

    141F

    Abstract: 142F
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE * -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to T IP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF TIP140F/141F/142F 145F/146F/147F 141F 142F

    GE636

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145T/146T/147T HIGH DC CURRENT GAIN-MIN hFE=1000 @ V ce = -4 V , lc = - 5 A T O -2 2 0 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C o m p le m e n t to TIP140T/141T/142T


    OCR Scan     		PDF TIP145T/146T/147T TIP140T/141T/142T GE636

    TIP 41 transistor

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN-MIN hFE=1000 @ Vce=4V, lc = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C om plem ent to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP140T/141T/142T TIP145T/146T/147T TIP 41 transistor

    TIP 41 transistor

    Abstract: MS62-7 tip142
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE= 1000 @ V C e = -4 V , lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3PF C o m p le m e n t to T IP 1 4 5 F /1 4 6 F /1 4 7 F


    OCR Scan     		PDF TIP140F/141F/142F TIP 41 transistor MS62-7 tip142

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP140/141/142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p le m e n t to T IP 1 4 5 /1 4 6 /1 4 7


    OCR Scan     		PDF TIP140/141/142 TIP142

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP140/141/142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P NPv • C o m p le m e n t to TI P 1 4 5 /1 4 6 /1 4 7


    OCR Scan     		PDF TIP140/141/142

    npn, transistor, sc 107 b

    Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
    Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.


    OCR Scan     		PDF TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C TIP31B npn, transistor, sc 107 b transistor TIP 31A TIP 31a Transistor TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor

    TIP308

    Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
    Text: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC


    OCR Scan     		PDF b3b7254 TIP29 T1P29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C TIP308 woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405

    tip146

    Abstract: tip 146 TIP145 tip147 147 B transistor
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSÌSTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE* 1000 @ V c e = *4V, IC * -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Complement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP145/146/147 TIP140/141/142 TIP145 TIP146 TIP147 TIPI45/146/147 tip146 tip 146 TIP145 tip147 147 B transistor