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    TRANSISTOR TL 188 Search Results

    TRANSISTOR TL 188 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TL 188 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


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    PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    atc200b104kw50

    Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
    Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


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    PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 PDF

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


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    PDF

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


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    NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a PDF

    NTE163A

    Abstract: No abstract text available
    Text: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V


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    NTE163A NTE163A 100mA, PDF

    NTE389

    Abstract: No abstract text available
    Text: NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction


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    NTE389 NTE389 PDF

    CMT20N20N220

    Abstract: No abstract text available
    Text: CMT20N20 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode


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    CMT20N20 CMT20N20N220 PDF

    NTE386

    Abstract: npn 10a 800v
    Text: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited


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    NTE386 NTE386 300ms, npn 10a 800v PDF

    UF460

    Abstract: 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s
    Text: Compound Transistor A if# N 1 A 3 Q St o '< 4 T X Ì È Ì Ì £ 1*1/1 L T ^ R i = 1 .0 kQ , R 2= 10 i - t o kQ o — w v Ri — o A A 1A 3 Q £ n > 7 ° ij y > ? 'J X " itm T è £ w 1 \ v — R2 <» O e (Ta = 25 °C) Tl a& g aE # {ÌL fé n u ? ? •^ - X P I fE


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    CycleS50 SC-43B UF460 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s PDF

    2SA1885

    Abstract: transistor 2sa1776
    Text: 2SA1885 2SA1812 / 2SA1727 / 2SA1776 Transistors High-frequency Amplifier Transistor, RF switches — 10V, — 0.1 A I 2S A 1885 # F e atu re s • A b s o lu t e m ax im u m ra tin g s (T a = 2 5 'C ) t ) H ig h tran sitio n fre q u e n cy . (T y p . 6 5 0 M H z )


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    2SA1885 2SA1812 2SA1727 2SA1776 50yuA 100mA/-- transistor 2sa1776 PDF

    Transistor D 1881

    Abstract: BD239D
    Text: BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS Copyright Q 1997, Power Innovations Umltad, UK • 30 W at 25°C Case Temperature • 2 A Continuous Collector Current • 4 A Peak Collector Current • Customer-Spectftoci Selections Available SEPTEMBER 1881 - REVISED MARCH »997


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    BD239D, BD239E, BD239F O-220 BD239D B0239Ë BD239E Transistor D 1881 PDF

    equivalent transistor TIP3055

    Abstract: 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 2N3055 equivalent transistor c2688 transistor
    Text: t e x a s T n s T ìT ^ ìo p I r -8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR r - 1 ? - / 3 DEC EM BER 1970 - REVISED OCTOBER 1884 • Designed for Complementary U se with TIP2955 • 90 W at 25° C C ase Temperature


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    TIP3055 TIP2955 2N3055 T0-218AA 7S265 Ttil72ti 37D0C1 equivalent transistor TIP3055 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 2N3055 equivalent transistor c2688 transistor PDF

    lg crt monitor rgb cable

    Abstract: lg crt monitor circuit diagram Helitrim CRT MONITOR SCHEMATIC DIAGRAM monochrome HP1120A LG crt monitor PCB diagram crt monitor block diagram lg 15 lm1201 Helitrim Model 91 LM1201N
    Text: LM1201 £3 National ÆM Semiconductor LM1201 Video Amplifier System General Description The LM1201 is a wideband video amplifier system intended for high resolution monochrome or RGB monitor applica­ tions. In addition to the wideband video amplifier the


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    LM1201 LM1201 LM1203 F/15V, LM1201. lg crt monitor rgb cable lg crt monitor circuit diagram Helitrim CRT MONITOR SCHEMATIC DIAGRAM monochrome HP1120A LG crt monitor PCB diagram crt monitor block diagram lg 15 Helitrim Model 91 LM1201N PDF

    TL 188 TRANSISTOR PIN DIAGRAM

    Abstract: PEAK DETECTOR System on a chip TRANSISTOR CODE SA5
    Text: Philips Semiconductors Product specification Postamplifier with link status indicator DESCRIPTION SA5214 PIN CONFIGURATION The SA 5 2 1 4 is a 75M H z postamplifier system designed to accept low level high-speed signals. These signals are converted into a


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    SA5214 SA5214 SA5210, SA5211 SA5212 TL 188 TRANSISTOR PIN DIAGRAM PEAK DETECTOR System on a chip TRANSISTOR CODE SA5 PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC 6427525 N E C Tû ELECTRONICS INC DE | bM E7S 25 OGlöflSS 2 J ~ 98D 18855 MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE FAST SWITCHING N-CHANNEL SILICON POWER P A C K A G E D IM E N S IO N S 6 - S ± 0 .2 . i f {U n it : m m 2 .3 : 0.2


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    PDF

    LM1203N

    Abstract: No abstract text available
    Text: Ja n u a ry 1996 Semiconductor LM1203 RGB Video Amplifier System General Description Features The LM1203 is a wideband video amplifier system intended for high resolution RGB color monitor applications. In addi­ tion to three matched video amplifiers, the LM1203 contains


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    LM1203 LM1201 bS01124 LM1203N PDF

    pin out of lm338

    Abstract: LM33B lm338 OF IC LM338 LM338 used as a current regulator application note for lm338 12v 5amp battery charger adjustable current limiter lm338 7105A-AT2-502 LM138/LM338
    Text: LM138/LM338 National Semiconductor LM138, LM338 5-Amp Adjustable Regulators General Description The LM138 series of adjustable 3-terminal positive voltage regulators is capable of supplying in excess of 5A over a 1.2V to 32V output range. They are exceptionally easy to


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    LM138/LM338 LM138, LM338 LM138 TL/H/9060-25 TL/H/9060-- pin out of lm338 LM33B OF IC LM338 LM338 used as a current regulator application note for lm338 12v 5amp battery charger adjustable current limiter lm338 7105A-AT2-502 LM138/LM338 PDF

    g21 Transistor

    Abstract: PMBTH10 PMBTH81
    Text: □□¿SW Philips Semiconductors ESI H A P X Product specification PNP 1 GHz switching transistor ^ ÂI1ER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN • High transition frequency. PMBTH81 t,7E ]> DESCRIPTION Code: V31 1 base DESCRIPTION 2 emitter


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    bbS3T31 PMBTH81 PMBTH10. PMBTH81 MRAS67 g21 Transistor PMBTH10 PDF

    M0607

    Abstract: No abstract text available
    Text: _ - . :- . ~~_ . ~~ - N AMER PHIL IPS /D IS CR ET E _ Gt.E D ' • ii ~ ■ ■ ■■ t.bS3T31 D01SD4S Ì ■ 11 ■ M06075B400Z M AINTENANCE TYPE r - a s - i g - PULSED MICROWAVE POWER TRANSISTOR


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    Q015045 M06075B400Z M0607 PDF

    667 transistor ecb

    Abstract: EVL32-060 A50L-0001-0109
    Text: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)


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    O-237 667 transistor ecb EVL32-060 A50L-0001-0109 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM1203 National Semiconductor LM1203 RGB Video Amplifier System General Description Features The LM1203 is a wideband video amplifier system intended for high resolution RGB color monitor applications. In addi­ tion to three matched video amplifiers, the LM1203 contains


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    LM1203 LM1203 LM1201 TL/H/9170-10 LM1203/LM1881 PDF

    SV-03 diode

    Abstract: tl5941 TL595C TL694C TL594C TL594 TL594I TL595 Tl595cn TL-694
    Text: TEXAS INSTR LIN/INTFC IfiE J> m 0 Tbl 7 S 4 GOTÌS^l ti TL594I, TL594C, TL595G PULSE-WIDTH-MODULATION CONTROL CIRCUITS D2712, A PRIL 1883—R EV ISED O C TO BER 1988 TL594I. TL594C . . . D. J . OR N PACKAGE (TOP VIEW) • Complete PWM Power Control Circuitry


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    TL594I, TL594C) TL595G D2712, 1983-REV1SED 200-mA TL595 TL594 U1724 SV-03 diode tl5941 TL595C TL694C TL594C TL594I Tl595cn TL-694 PDF

    2SA1885

    Abstract: transistor 2sa1776
    Text: 2SA1885 2SA1812/ 2SA1727 / 2SA1776 Transistors High-frequency Am plifier Transistor, RF switches — 10V, — 0.1A 2SA1885 0 Features >A bsolute maxim um ratings (T«=25'C ) 1 ) High transition frequency. (Typ. 650M H z) P aram eter Collector-base voltage


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    2SA1885 2SA1812/ 2SA1727 2SA1776 2SA1885 transistor 2sa1776 PDF

    LM78MGCP

    Abstract: lm79mgcp lm78mg P04A 2m6124 78MG OLS-3 LM79MG 5Z7-C49 d408
    Text: *«H- « !S83 d U H A p ril 1991 S e m ic o n d u c t o r LM78MG/LM79MG 4-Terminal Adjustable Voltage Regulators Features • ■ ■ ■ ■ ■ Output current in excess of 0.5A LM78MG positive output voltage + 5.0V to + 30V LM79MG negative output voltage -3 0 V to -2 .6 V


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    LM78MG/LM79MG LM78MG LM79WG LM79MG. LM79MG 3-3112S36 LM78MGCP lm79mgcp P04A 2m6124 78MG OLS-3 5Z7-C49 d408 PDF