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    TRANSISTOR TM 1X Search Results

    TRANSISTOR TM 1X Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TM 1X Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CEDM7001

    Abstract: mosfet low vgs n-channel mosfet transistor low power CEDM7001E
    Text: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001E CEDM7001E OT-883L 100mW CEDM7001E: 100mA 16-March CEDM7001 mosfet low vgs n-channel mosfet transistor low power PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for


    Original     		CEDM8001 100mW OT-883L CEDM8001: 100mA 29-November PDF

    CEDM7001

    Abstract: No abstract text available
    Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001 CEDM7001 OT-883L 100mW CEDM7001: 100mA 29-November PDF

    CEDM7001

    Abstract: mosfet low vgs mosfet vgs 5v
    Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001 CEDM7001 OT-883L 100mW CEDM7001: 100mA 31-July mosfet low vgs mosfet vgs 5v PDF

    n-channel mosfet transistor low power

    Abstract: CEDM7001
    Text: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001E CEDM7001E OT-883L 100mW CEDM7001E: 100mA 20-November n-channel mosfet transistor low power CEDM7001 PDF

    sot883l

    Abstract: CEDM7001
    Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001 100mW OT-883L CEDM7001: 100mA 16-March sot883l PDF

    CEDM8001

    Abstract: No abstract text available
    Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for


    Original     		CEDM8001 CEDM8001 OT-883L 100mW CEDM8001: 100mA 16-March PDF

    Untitled

    Abstract: No abstract text available
    Text: RY A N I CEDM7004 Central IM EL PR TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process,


    Original     		CEDM7004 CEDM7004 OT-883L tp10s 400mA 200mA 100mA 16-June PDF

    2N7269U

    Abstract: IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U
    Text: PD - 90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.100Ω Ω, MEGA RAD Hard REF:MIL-PRF-19500/603 N CHANNEL MEGA RAD HardTM TM HEXFET® Inter national Rectifier’s RAD Hard technology


    Original     		90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U 200Volt, MIL-PRF-19500/603) 1x106 2N7269U IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U PDF

    CEDM7004

    Abstract: No abstract text available
    Text: CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		CEDM7004 CEDM7004 OT-883L tp10s 400mA 200mA 100mA PDF

    p-channel mosfet transistor low power

    Abstract: mosfet low vgs CEDM8001 p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V
    Text: CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.


    Original     		CEDM8001 CEDM8001 OT-883L 100mA 29-February p-channel mosfet transistor low power mosfet low vgs p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet October 6, 2003 Document No: DS03-083 ver. 1.0 PDF name: microlynx_sip_3v-5.5v.pdf Austin MicroLynx SIP Non-isolated Power Modules: 3.0Vdc – 5.5Vdc input; 0.75Vdc to 3.3Vdc Output; 5A Output Current TM Features ƒ Delivers up to 5A output current


    Original     		DS03-083 75Vdc x3001 PDF

    C3225X5R0J226V

    Abstract: AXH003A0X AXH003A0X4 SR-332
    Text: Data Sheet May 9, 2005 Austin MiniLynx SIP: Non-Isolated DC-DC Power Modules: 2.4 – 5.5Vdc input; 0.75Vdc to 3.63Vdc Output; 3A Output Current TM Features ƒ Directive 2002/95/EC RoHS compatible ƒ Delivers up to 3A output current ƒ Industry standard footprint


    Original     		75Vdc 63Vdc 2002/95/EC SR-332 x3001 DS04-040 C3225X5R0J226V AXH003A0X AXH003A0X4 SR-332 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet October 6, 2003 Document No: DS03-082 ver. 1.0 PDF name: microlynx_smt_3.3v-5v.pdf Austin MicroLynx SMT Non-isolated Power Modules: 3.0Vdc – 5.5Vdc input; 0.75Vdc to 3.3Vdc Output; 5A Output Current TM Features ƒ Delivers up to 5A output current


    Original     		DS03-082 75Vdc x3001 PDF

    transistor m285

    Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650 PDF

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H M arch 1998 I L D M IC O N D U C TO R tm FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperS0T -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		FDN337N PDF

    10N25

    Abstract: No abstract text available
    Text: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES


    OCR Scan     		MTM10N25 MTP10N25 0J570 19XACE 30i0012 TQ-204AA 21A-04 O-220AB 10N25 PDF

    70910

    Abstract: transistor cny CNY17F-1X E91231
    Text: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a


    OCR Scan     		46fibSlQ 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20mA) 70910 transistor cny CNY17F-1X E91231 PDF

    CNY17F-1X

    Abstract: CNY17F-2X E91231 cny 17 ISOCOM lot number transistor cny CNY 27-4
    Text: ISOCOM CO MP O N E N T S LTD HôfibSlO QQ QOS SM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a


    OCR Scan     		46fibS10 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20mA) CNY17F-1X CNY17F-2X E91231 cny 17 ISOCOM lot number transistor cny CNY 27-4 PDF

    MOC302

    Abstract: amplifier - ATH 226 IRGB40S htr 1031 MOC3021 equivalent nomograph triac inverter P12FS
    Text: ANALOG DEVICES FEATURES Tem perature Sensor Includes 100 Ü Heater Heater Provides Power IC Emulation Accuracy ± 3 °C ty p . from —4 0 °C to +100°C Operation to +150° C 5 m V / C Internal Scale-Factor Resistor Program m able Tem perature Setpoints 20 mA Open-Collector Setpoint Outputs


    OCR Scan     		TMP12* TMP12. TMP12 TIP-110, TMP12 MOC302 amplifier - ATH 226 IRGB40S htr 1031 MOC3021 equivalent nomograph triac inverter P12FS PDF

    LM 7209

    Abstract: No abstract text available
    Text: ISOCOM COMPONENTS LTD 45E » • HôfibSlD GQDDE54 H ■ ISO 3 j CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X ~ ~ OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT “ ir : p S i t f l s§ ? f è S $ s DESCRIPTION The CNY 17 is a optically coupled isolator consisting


    OCR Scan     		GQDDE54 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20m LM 7209 PDF

    TP52N06V

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP52N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


    OCR Scan     		MTP52N06V/D TP52N06V 21A-06 TP52N06V PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


    OCR Scan     		1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor PDF

    rkm 34 transistor

    Abstract: RKM 24 sm transistor
    Text: SA NY O S E M I C O N D U C T O R CO R P 53E D ? cH 7 0 7 b 000^0^7 TIT » T S A J T - ^ 2 - 3 3 . I Ordering num br EN39661 CMOS LSI SAXYO LC5872, LC5873, LC5874, LC5876 4-bit Single-chip Microprocessors P r e lim in a r y OVERVIEW H ie LC5872. LC5873, LC5874 and LC5876 are 4-bit single-chip microprocessors designed for low-voltage


    OCR Scan     		EN39661 LC5872, LC5873, LC5874, LC5876 LC5872. LC5874 LC5876 KBR-400B rkm 34 transistor RKM 24 sm transistor PDF