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    TRANSISTOR TT 2070 Search Results

    TRANSISTOR TT 2070 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TT 2070 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    motorola HEP cross reference

    Abstract: EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64
    Text: BR1513/D Rev. 2, Apr-2001 ECLinPS Plus Device Data ECLinPS Plus Device Data Advanced ECL in Picoseconds BR1513/D Rev. 2, Apr–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved” ECLinPS, ECLinPS Lite, and ECLinPS Plus are trademarks of Semiconductor Components Industries, LLC.


    Original     		PDF BR1513/D Apr-2001 r14525 DLD601 motorola HEP cross reference EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    T3HS

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .


    OCR Scan     		PDF 2SC3142 750MHz T3HS

    Transistor TT 2140

    Abstract: transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200
    Text: EPSON _ SSC2000 Series Standard Cell • • • • Built-in Analog Circuit Internal Two Power Supplies Level Shifter Wide Operating Voltage: 0.9 V to 6.0 V Up to 11,000 gates I DESCRIPTION T he SS C 2000 series is a C M O S standard cell w ith low -threshold m anufacturing process providing low voltage


    OCR Scan     		PDF SSC2000 WU01- Transistor TT 2140 transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 55E 7cìeì707b O O O b á ñ 11 a D T - 31-15 2SC4407 NPN Epitaxial Planar Silico n Transistor 2059 VHF/UHF MIX, OSC Applications 2760 Applications • V H F/U H F m ixers, frequency converters, local oscillators Features f r = 3.0GHz typ


    OCR Scan     		PDF 2SC4407 2SC4407-applied

    transistor 2N3055

    Abstract: MJ2955 300 watts amplifier mj2955 MBD5300 2N3055* motorola MJ2955 app. note 2N3055 AN-415 MJ2500 MJ3000
    Text: MJ2955 SILICON 15 AMPERE POWER TRANSISTOR PNP SILICON POWER TRANSISTOR PNP SILICON . . . designed for general-purpose switching and amplifier applications. • DC Current Gain — hpE = 20-70 @ lc = 4.0 Adc * Collector-Emitter Saturation Voltage — VcE(sat) “ 1*1 Vdc (Max) @ lc = 4.0 Adc


    OCR Scan     		PDF MJ2955 2N3055 MJ3000, MJ3001 MJ2500 transistor 2N3055 MJ2955 300 watts amplifier mj2955 MBD5300 2N3055* motorola MJ2955 app. note 2N3055 AN-415 MJ3000

    TT 2076 transistor

    Abstract: 2sc2052 TT 2076 tbb 2066 2SA934 2SA93 IN tt 2076 transistor s 2065 af Mix 2071
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 27MHz, 35dBm, TT 2076 transistor 2sc2052 TT 2076 tbb 2066 2SA934 2SA93 IN tt 2076 transistor s 2065 af Mix 2071

    31086F

    Abstract: 2SA1204Y
    Text: INTEGRATED OSHIBA CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA31086F SILICON MONOLITHIC SYSTEM REGULATOR IC FOR CORDLESS TELEPHONE 3 independent regulators on a chip, very suitable for a handset of cordless telephone. FEATURES • 3 regulators, independent one another


    OCR Scan     		PDF TA31086F 2SA1204-Y TA31086F-9_ TCH7247 SSOP16-P-225A TA31086F- 31086F 2SA1204Y

    LMM 2057

    Abstract: t3hs marking ADMI 2SC3142 high power amp 100mhz 1w
    Text: imQlh 22E D SA NY O S E M I C O N D U C T O R CORP OOOLTSl 0 T-3HS 2SC3142 N P N Epitaxial Plan ar S ilic o n T ransistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .


    OCR Scan     		PDF 7cn707tI 2SC3142 1066a 750MHz LMM 2057 t3hs marking ADMI 2SC3142 high power amp 100mhz 1w

    RCA TO-5

    Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 RCA TO-5 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372

    pa 2030a

    Abstract: cp 035 sanyo NPN S2e 2SC4412 Marking transistor 3019 Transistor
    Text: SA NY O S E M I C O N D U C T O R 25E D CORP 7T= 707b 0 0 Q 7 0 3 7 b T -3H 7 2SC4412 ^ N PN Triple Diffused Planar Silicon Transistor 2018 A TV Camera Deflection, High-Voltage Driver Applications D3019 F e a tu r e s . H igh breakdow n voltage (V c e o —300V)


    OCR Scan     		PDF 1707b 00Q7037 2SC4412 pa 2030a cp 035 sanyo NPN S2e Marking transistor 3019 Transistor

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .


    OCR Scan     		PDF i707L T-31-n 2SC377 1947B

    358 IC

    Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
    Text: SANYO SEMICONDUCTOR CORP 2SC4453 52E D • 7 ^ 7 Q ? h 0007104 t ■ T-35-09 2018A N PN Epitaxial Planar Silicon Transistor High-Speed Switching Applications 2S12 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product


    OCR Scan     		PDF 2SC4453 2SC4453-applied 358 IC transistor 359 AJ S2E MARKING 2S12 transistor npn d 2058

    RCA 528

    Abstract: 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 528 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA

    BDX33C darlington pair

    Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
    Text: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 BDX33C darlington pair 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250

    rca 2n6103

    Abstract: 2N6101 rca 2N6476 rca RCA 40250 transistor Bf 353 RCA 411 TRANSISTOR TT 2070 2N1482 2N3054 2N5298
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 rca 2n6103 2N6101 rca 2N6476 rca RCA 40250 transistor Bf 353 RCA 411 TRANSISTOR TT 2070 2N1482 2N3054 2N5298

    transistor marking bh ra

    Abstract: 2SA1641
    Text: S A N Y O S E M I C O N D U C T O R CORP SHE D 7 eJ‘ì707b 000-7140 4 2SA1641 T- 31-IS PNP Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications I2326A F eatures . Adoption of FBET, MBIT processes. • Low saturation voltage. • F ast switching speed.


    OCR Scan     		PDF 2SA1641 31-IS I2326A 2SA1641-used transistor marking bh ra 2SA1641

    transistor kd 2059

    Abstract: pa 2030a kd 2059 SANYO SS 1001 2SC4523 MARKING 2S SMA
    Text: SANYO S E M I C O N D U C T O R CORP 55E D 7^707^ OD0.71 1 1 ö r-3S~n 2SC4523 ♦ NPN Epitaxial Planar Silicon Transistor 2044 • High-Speed Switching Applications 3142 F e a tu re s . Adoption o f F B E T , M BIT processes • Large current capacity •Low collector-to-emitter saturation voltage


    OCR Scan     		PDF 2SC4523 T-35-11 transistor kd 2059 pa 2030a kd 2059 SANYO SS 1001 MARKING 2S SMA

    2SC3775

    Abstract: 2SC4405
    Text: 7Ti707b QOQbûêl 3 55E D SANYO S E M I C O N D U C T O R CORP 2SC4405 - T -3 Ì -I S 2059 N P N E p it a x ia l P la n a r S il i c o n T ra n sist o r UHF Low-Noise Wide-Band Amp Applications 2758 Applications •U H F , low -noise am plifiers, wide-band am plifiers


    OCR Scan     		PDF 2SC4405-applied 2SC3775 2SC4405

    pa 2030a

    Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
    Text: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e


    OCR Scan     		PDF FC103 2SA1622, pa 2030a 25CC 2SA1622 2018Al IC 7443

    CBIC-U

    Abstract: PU392A02 ALA210 NU231A01 NU362A02 NU431A01 PU432A01 PU693A02 pnp 8 transistor array npn 8 transistor array
    Text: microelectronics Data Sheet May 1996 group Lucent T echnologies Bell Labs Innovations ALA210 UHF Semicustom Linear Array Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA210 UHF Semicustom Linear Arrays is an integrated circuit consisting of vertical NPN and PNP


    OCR Scan     		PDF ALA210 DS96-150BPF DS92-120LBC) CBIC-U PU392A02 NU231A01 NU362A02 NU431A01 PU432A01 PU693A02 pnp 8 transistor array npn 8 transistor array

    Transistor 2n6099

    Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 Transistor 2n6099 BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344

    RCA 40636 transistor

    Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
    Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327