JE3055

Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
Contextual Info: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.

02n60

Abstract: JD127
Contextual Info: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.

040M1

Contextual Info: 3875081 G E SOLID S T A T E D ! T~33~ 3 DE |3fl7S0fll 0 D l ci4SD 3 HIGH POWER 2N3772 NPN POWER TRANSISTORS 60 VOLTS 20 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch­

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N5986

Abstract: 2N5988 2N5991 2N5987 2N5989
Contextual Info: DE | b 3 b 7 2 5 4 0000404 2 | ~ MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC <XSTRS/R F 96DS0404 D ~pr-3 3-/S PNP MOTOROLA T' 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA NPN 2N5989, 2N5991 12 AMPERE H IG H POWER PLASTIC C O M P LE M E N TA R Y S IL IC O N POWER TRANSISTO RS

transistor 2N3055

Abstract: MJ2955 300 watts amplifier mj2955 MBD5300 2N3055* motorola MJ2955 app. note 2N3055 AN-415 MJ2500 MJ3000
Contextual Info: MJ2955 SILICON 15 AMPERE POWER TRANSISTOR PNP SILICON POWER TRANSISTOR PNP SILICON . . . designed for general-purpose switching and amplifier applications. • DC Current Gain — hpE = 20-70 @ lc = 4.0 Adc * Collector-Emitter Saturation Voltage — VcE(sat) “ 1*1 Vdc (Max) @ lc = 4.0 Adc

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

Contextual Info: MOTO RO LA SC XSTRS/R 15E D | b 3b72 S4 F GOASS^ 0 | T -3 3 -3 3 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA PNP MJD6036 NPN MJD6039 C o m p le m e n ta ry D a rlin g to n P o w e r T r a n sisto rs D P A K For Surface M o u n t A pplications D e sig n e d fo r ge ne ral p u rp o se p o w e r a n d sw itch in g s u c h a s ou tp u t o r d river

Nippon capacitors

Contextual Info: M O T O R O L A SC XSTRS/R F EbE D • b3b?2S4 00^12^0 2 Order this data sheet by MJD243/D MOTOROLA SEMICONDUCTOR ■ H s a n r a n ' T 3 3-0 7 TECHNICAL DATA m " NPN M JD243 PNP M JD253 P lastic Pow er Tran sistor C om plem entary Pair DPAK For S urface M ount and

mbd5300

Abstract: mbd-5300 ADC 0408 DV2 15E mjf102
Contextual Info: MOTOROLA SC X S T R S /R F 12E 0 I b 3 t.7 2 S 4 GOäSMSb T - 3 5 | 3 - 3 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Full Pak MJF102 Com plem entary Pow er Darlingtons MJF107 PIMP For Isolated Package Applications COMPLEMENTARY SILICON POWER DARLINGTONS 8 AMPERES

Contextual Info: MOTOROLA SC X S TR S/ R F 12E D I b3t.7254 GGflSEME 5 | T- 3 3 - 0 7 ' r- 33-/7 MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA N PN M JD31,C PN P M JD32,C C o m p le m e n ta ry P o w e r T r a n s isto rs D P A K For Surface M o u n t A pp lication s Designed for general purpose amplifier and low speed switching applications.

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

J377

Abstract: MJ3771 MJ3772 TCA 875 AN-415 MJ6257 MSD6100 NIJ3771
Contextual Info: MJ3771, MJ3772, MJ6257 SILICON 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON HIGH POWER NPN SILICO N POWER TRAN SISTO RS 40 and 60 VOLTS 200 WATTS Select from Epibase transistors for ultimate circuit performance based on the design requirements. E P IB A S E - Designed fo r power am plifier and switching applications.

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

2N5991

Abstract: 2N5987 2N5988 2N5989 225AB TO-225AB 2N5986 2N6988 transistor 2 Amp 3 volt 2sc 3138
Contextual Info: • -X - MOTOROLA SC -CXSTRS/R F> = ” ^ x - ^ « ÎW ÎB PNP MOTOROLA 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA « 1» 1 / NPN * 2N5989, 2N5991 « * 4 4 % 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON

2N5986

Abstract: 2N5987 2N5988 2N5989 2N5991 MBD5300 sc 0645 225AB diode F4 3J 75S4
Contextual Info: MOTOROLA SC 6367254 DE | b 3 t . 7 2 S 4 -tXSTRS/R F> MOTOROLA SC XSTRS/R F 96D Ö 0 4 0 4 OoaOMDM D - p r .3 3 - m T PNP MOTOROLA ’ 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA NPN 2N5989, 2N5991 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS

Power transistor TO-220 NPN 100 V, TIP 41C

Abstract: TIP 41c transistor 41BT SJ7147 tip42c amplifier TIP4 TIP42 MOTOROLA
Contextual Info: MOTOROLA SC 12E D 1 b3b7ES4 □üflSSSä 1 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN PNP TIP41 TIP41A TIP41B TIP41C TIP42 TIP42A TIP42B TIP42C 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . . . designed for use in general purpose amplifier and switching

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A