MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
PDF
|
|
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
PDF
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
|
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
PDF
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
|
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
|
Original
|
PDF
|
KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
|
MPSU10 equivalent
Abstract: MPSU10 MPS-U10 CEN-U10 TO-202 transistor NPN to 202 case npn silicon power transistor
Text: CEN-U10 w w w. c e n t r a l s e m i . c o m NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U10 type is an NPN silicon power transistor designed for high voltage amplifier applications. This device is an electrical equivalent to Motorola’s MPSU10.
|
Original
|
PDF
|
CEN-U10
CEN-U10
MPSU10.
O-202
100MHz
23-January
MPSU10 equivalent
MPSU10
MPS-U10
TO-202 transistor NPN
to 202 case
npn silicon power transistor
|
diagram LG LCD TV circuits
Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management
|
Original
|
PDF
|
OD-523
OD-323
OD323-2-1
SC-76)
OD-123FL
OT-723
OT-23
OT-89
diagram LG LCD TV circuits
schematic LG TV lcd backlight inverter
schematic LG lcd backlight inverter
schematic diagram inverter 12v to 24v 30a
lg lcd tv POWER SUPPLY SCHEMATIC
lg led tv internal parts block diagram
diagram power supply LG 32 in LCD TV circuits
KIA78033F
regulator KIA78 ic
philips lcd tv inverter schematic
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
PDF
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
MPSU10 equivalent
Abstract: MPSU10 MPS-U10 CEN-U10 "Silicon Power Transistor"
Text: Datasheet CEN-U10 W Q lH a U l Semiconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE (EBC) Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CEN-U10 type is a NPN Silicon Power Transistor designed for high voltage
|
OCR Scan
|
PDF
|
CEN-U10
O-202
CEN-U10
MPSU10.
100hA
10mAf
100MHz
MPSU10 equivalent
MPSU10
MPS-U10
"Silicon Power Transistor"
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
|
OCR Scan
|
PDF
|
BUK7840-55
OT223
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PDF
|
PHP33N10
T0220AB
|
mb060
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
|
OCR Scan
|
PDF
|
BUK482-100A
OT223
mb060
|
1ehj3
Abstract: BUK581-60A Transistor 8d4
Text: N AUER PHILIPS/DISCRETE bRE D • bb53S31 DDaDflaQ 604 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope
|
OCR Scan
|
PDF
|
bbS3S31
BUK581-60A
OT223
3Gfl35
BUK581-60A
OT223.
1ehj3
Transistor 8d4
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
PDF
|
|
BUK552
Abstract: BUK552-60A BUK552-60B T0220AB D0307
Text: N AUER PHILIPS/DISCRETE b^E D • bbSa^Bl DD3D7fiD 45*} ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
|
OCR Scan
|
PDF
|
D0307BO
BUK552-60A
T0220AB
BUK552
ID/100
BUK552-60B
D0307
|
|
|
BUK455-400B
Abstract: No abstract text available
Text: bSE D PHILIPS INTERNATIONAL m 711062b D 0 b 4 C m Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use In Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
711062b
BUK455-400B
-T0220AB
BUK455-400B
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/ DISCRE TE DQEObSS b 5SE D PowerMOS transistor Fast Recovery Diode FET BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery
|
OCR Scan
|
PDF
|
BUK627-450B
b53T31
|
BUK657-500C
Abstract: No abstract text available
Text: bbS3T31 0030710 T • 5SE D N AUER PHILIPS/DISCRETE PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C T -3 < M 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
|
OCR Scan
|
PDF
|
bbS3T31
BUK657-500A
BUK657-500B
BUK657-500C
BUK657
-500A
9/76m
BUK657-500C
|
BUK437-500B
Abstract: No abstract text available
Text: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
bbS3R31
BUK437-500B
btS3T31
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
|
OCR Scan
|
PDF
|
bbS3R31
BUK453-60A/B
O220AB
BUK453
0030b04
|
BUK637-500B
Abstract: BUK637-500A BUK637-500C
Text: N AMER PHILIPS/DISCRETE 55E D • Lb53T31 OQSQbôO S PowerMOS transistor Fast Recovery Diode FET ■ BUK637-500A BUK637-500B BUK637-500C T - 3 *7 -is* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
|
OCR Scan
|
PDF
|
BUK637-500A
BUK637-500B
BUK637-500C
BUK637
-500A
-500B
-500C
BUK637-500C
|
Untitled
Abstract: No abstract text available
Text: N AUER PH ILI PS/ DIS CR ETE 5SE D Lfa53131 Q030370 1 BUK444-500A BUK444-500B PowerMOS transistor '- 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
Lfa53131
Q030370
BUK444-500A
BUK444-500B
BUK444
-500A
-500B
|
BUK445
Abstract: BUK445-500A BUK445-500B IE-04
Text: N AMER PHI LI PS /DIS CR ETE 2SE D • ^53131 0020410 =1 ■ BUK445-500A BUK445-500B PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
BUK445-500A
BUK445-500B
BUK445
-500A
-500B
BUK445-500A
BUK445-500B
IE-04
|
Untitled
Abstract: No abstract text available
Text: N AMER PHI LIP S/ DIS CR ETE ^ 5 3 7 3 1 D020400 h 5SE D BUK445-400A BUK445-400B PowerMOS transistor r - 37 - O ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
D020400
BUK445-400A
BUK445-400B
BUK445
-400A
-400B
|
BUK444-500A
Abstract: BUK444-500B transistor BUK444-500B BUK444
Text: N AMER PHI LI PS / DI SC R ET E ESE kfa53T31 0DSG37G D 1 BUK444-500A BUK444-500B PowerMOS transistor T - 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
kfa53T31
0DSG37G
BUK444-500A
BUK444-500B
BUK444
-500A
-500B
BUK444-500B
transistor BUK444-500B
|
