Untitled
Abstract: No abstract text available
Text: SUR503EF ㅜ Semiconductor Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1206 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information
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SUR503EF
SRC1206
OT-563F
OT-563F
KSD-R5U002-000
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Abstract: No abstract text available
Text: ㅇ SBT2907F Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222F
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SBT2907F
SBT2222F
SBT2907F
OT-23F
KSD-T5C056-000
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on semiconductor marking code 2F
Abstract: marking 2F SBT2907A
Text: ㅇ SBT2907A Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222A
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SBT2907A
SBT2222A
SBT2907A
OT-23
KSD-T5C053-000
on semiconductor marking code 2F
marking 2F
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SBT2907AU
Abstract: No abstract text available
Text: ㅇ SBT2907AU Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AU
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SBT2907AU
SBT2222AU
SBT2907AU
OT-323
KSD-T5D021-000
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Untitled
Abstract: No abstract text available
Text: ㅇ SBT2907 Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222
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SBT2907
SBT2222
SBT2907
OT-23
KSD-T5C054-000
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Untitled
Abstract: No abstract text available
Text: ㅇ SBT2907AF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AF
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SBT2907AF
SBT2222AF
SBT2907AF
OT-23F
KSD-T5C055-000
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MARKING F2
Abstract: SBT2907AU
Text: ㅇ SBT2907AUF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AU
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SBT2907AUF
SBT2222AU
SBT2907AUF
OT-323F
KSD-T5D022-000
MARKING F2
SBT2907AU
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STC5551F
Abstract: No abstract text available
Text: ㅊ 9+ STC5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)
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STC5551F
STC5551F
OT-89
KSD-T5B012-000
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SOT89 MARKING CODE B2
Abstract: STD1766 STB1188
Text: ㅇ STD1766 NPN Silicon Transistor Descriptions • Medium power amplifier PIN Connection Features • PC Collector power dissipation =2W (Ceramic substrate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188
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STD1766
STB1188
OT-89
KSD-T5B004-003
SOT89 MARKING CODE B2
STD1766
STB1188
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Untitled
Abstract: No abstract text available
Text: Jsii.su <~>£.m.i-L.onaucitoi L/-* 10 duct ±, One. £s t/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. U311 N-Channel Silicon Junction Field-Effect Transistor • Mixer • Oscillator • VHF/UHF Amplifier
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17QOO
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U310
Abstract: SMPJ310 transistor u310
Text: Databook.fxp 1/14/99 11:33 AM Page B-67 B-67 01/99 U310 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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NJ72L
SMPJ310
U310
SMPJ310
transistor u310
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U311
Abstract: No abstract text available
Text: Databook.fxp 1/13/99 2:09 PM Page B-68 B-68 01/99 U311 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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NJ72L
U311
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STU310DH
Abstract: TO-252-4L stu310
Text: S T U310DH S amHop Microelectronics C orp. May,28,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 30V 19A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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U310DH
O-252-4L
STU310DH
O-252-4L
O-252-4
STU310DH
TO-252-4L
stu310
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stu312d
Abstract: stu312 U312D 312d pf 312D STU31
Text: S T U312D Green Product S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID
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U312D
O-252-4L
STU312D
O-252-4L
stu312d
stu312
U312D
312d
pf 312D
STU31
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9945a
Abstract: ic 9945 a 8 pin ci 9933 b 9945 A transistor 9945 A 9962 GH cx 3120 inverter circuit diagram 9936 9936 GN diode 9948
Text: FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT 0 °C TO 7 5 °C TEM PERATURE RANGE GENERAL DESCRIPTION— Fairchild Diode Transistor Micrologic DT/j L Integrated Circuits family uses
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ic 9945 a 8 pin
Abstract: 9945 A transistor ic 9945 a 4 pin L9944 diode 9948 LT 9949 fairchild micrologic 3m 9962 9932 DTL fairchild 9946
Text: FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRO DUCT 0°C TO 75°C TEM PERATURE RAN GE GENERAL DESCRIPTION — Fairchild Diode Transistor Micrologic DT/iL Integrated Circuits family uses
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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U310
Abstract: No abstract text available
Text: 9 -9 7 B 67 U310 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXER Absolute maximum ratings at T* = 25°C. • OSCILLATOR Reverse Gate Source & Reverse Gate Drain Voltage • VHF/UHF AMPLIFIER Continuous Forward Gate Current Continuous Device Power Dissipation
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0QC1C767
U310
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Untitled
Abstract: No abstract text available
Text: B 68 9-97 U311 N -C H A N N E L SILIC O N JU N CTIO N FIELD-EFFECT TRANSISTOR • MIXER • OSCILLATOR VHF/UHF AMPLIFIER Absolute maximum ratings at Ta = 25'C. Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation
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NJ72L
27R-3375
000D7Ã
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Untitled
Abstract: No abstract text available
Text: 4fl2bêflô 0 0 0 0 2 3 1 h • 2bE D INTER F E T CORP - r - 3 i-a .5 B39 U311 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • VHF AMPLIFIERS • OSCILLATORS • MIXERS absolute m axim u m ratings at 25°C free-air temperature Gate-Drain or Gate-Source V o lt a g e .
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1503C
SMP-U311
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J310
Abstract: Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor
Text: U309/J309/MMBFJ309/U310/J310/MMBFJ310 National Æ Â Semiconductor U309 U310 J309 J310 MMBFJ309 MMBFJ310 /V s U T L /G /1 0 1 0 0 -9 TO-236 SOT-23 TO*M T L/G /10100 -6 G T L /G /1 0 1 0 0 -2 N-Channel JFET Transistor for RF Amplifiers Electrical Characteristics t a
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U309/J309/MMBFJ309/U310/J310/MMBFJ310
MMBFJ309
MMBFJ310
J310
Transistor J310
J310 equivalent
U310
J309
13000 BR transistor
transistor u310
U309
N-Channel JFET transistor
j309 transistor
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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