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    TRANSISTOR V30 Search Results

    TRANSISTOR V30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR V30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Y22 SOT23

    Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor


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    PDF PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


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    PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


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    PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


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    PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    SDV1005E

    Abstract: V5R5
    Text: Multilayer Chip Varistor – SDV Series Operating Temp. : -55℃~+125℃ FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time <0.5ns Excellent solderability (Ni, Sn plating) ● ● ● APPLICATIONS Transient voltage protection for IC and transistor


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    PDF 1005-1pF 1005-2pF SDV1608 1608-1pF 1608-2pF SDV1005E V5R5

    AN804

    Abstract: TP0202T
    Text: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features


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    PDF TP0202T AN804. 44505--Rev AN804 TP0202T

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D


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    PDF TP0202T O-23ion S-52426--Rev. 14-Apr-97 TP0202T

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    AN804

    Abstract: TP0202T
    Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 For applications information see AN804.


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    PDF TP0202T AN804. S-44505--Rev. 06-Sep-94 AN804 TP0202T

    VP2410L

    Abstract: No abstract text available
    Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    PDF VP2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 VP2410L

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D


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    PDF TP0202T O-236 S-52426--Rev. 14-Apr-97 TP0202T

    TA 7061

    Abstract: TP0202T S4450
    Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 Features Benefits Applications D D D D


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    PDF TP0202T O-236 S-44505--Rev. 06-Sep-94 TA 7061 TP0202T S4450

    VP2410L

    Abstract: No abstract text available
    Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    PDF VP2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 VP2410L

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    lkt 108

    Abstract: 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE • 2SC3735 _ HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High Speed: t on < 1 2 ns t0ff < 18 ns 2 .8 ± 0.2 0-65 ±8:ls 1.5 ABSOLUTE MAXIMUM RATINGS


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    PDF 10-1BI= 10-1B2 2SC3735 NECTOKJ22686 lkt 108 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 D3ST00 bOb M A P X Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 N AflER PHILIPS/DISCRETE FEATURES b?E D PINNING PIN • Low cost • High power gain. DESCRIPTION Code: V30 1 base DESCRIPTION


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    PDF bb53T31 D3ST00 PMBTH10 PMBTH10 PMBTH81. dissipation1986 bbS3S31 MRA166 MRA167

    Transistor D 1881

    Abstract: PMBTH10 PMBTH81 d 1879 TRANSISTOR
    Text: bhSBTai Philips Semiconductors GG^STOü bOt APX Product specification NPN 1 GHz general purpose switching transistor aher PMBTH10 PHILIPS/D ISCRETE FEATURES PINNING • Low cost PIN • High power gain. b?E ]> DESCRIPTION Code: V30 1 base D ESCRIPTION 2 emitter


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    PDF PMBTH10 PMBTH10 PMBTH81. cur00 Transistor D 1881 PMBTH81 d 1879 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).


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    PDF EN5126 2SC5238 100ns 90195YK TA-0415 D0S0412

    capacitor tnr 471

    Abstract: 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and


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    PDF 610mm capacitor tnr 471 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM

    ERZC14DK911

    Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and


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    PDF 18vto zAC14DK911 tVSAC20DK911 ERZ-C10DK911 ERZ-C14DK911 ERZ-C20DK911 AC10DK102 tVSAC14DK102 fVSAC20DK102 ERZ-C10DK102 ERZC14DK911 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    V40U

    Abstract: transistor gi z 3m BA7625
    Text: Video ICs Video signal switcher for AV amplifiers BA7625 The BA7625 is a video signal switch that contains two five-channel analog multiplexers and wide-band 6dB amplifiers. It designedfor use in video cassette recorders. By simply adding transistor buffers to the outputs, it is possible to construct


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    PDF BA7625 BA7625 10MHz 10mvp-p. DIP16 V40U transistor gi z 3m