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    TRANSISTOR VDS RDS 12 ID 80A TO220 Search Results

    TRANSISTOR VDS RDS 12 ID 80A TO220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VDS RDS 12 ID 80A TO220 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor vds rds 12 id 80a to220

    Abstract: BUZ 80A A1309 BUZ 840 C67078-A1309-A3
    Text: BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80A 800 V 3A 3Ω TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage


    Original     		O-220 C67078-A1309-A3 transistor vds rds 12 id 80a to220 BUZ 80A A1309 BUZ 840 C67078-A1309-A3 PDF

    SEM 2006

    Abstract: P0808ATG transistor vds rds 12 id 80a to220
    Text: P0808ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 8mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P0808ATG O-220 Sep-20-2006 SEM 2006 P0808ATG transistor vds rds 12 id 80a to220 PDF

    65C7045

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab


    Original     		650VCoolMOSTMC7PowerTransistor IPP65R045C7 IPP65R045C7 O-220 65C7045 PDF

    kf80n08

    Abstract: KF80N08P kf80n08f 701p2
    Text: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS


    Original     		KF80N08P/F KF80N08P Fig15. Fig16. Fig17. kf80n08 KF80N08P kf80n08f 701p2 PDF

    CEP80N75

    Abstract: transistor vds rds 12 id 80a to220 ceb80n75 CEF80N75 CEI80N75
    Text: CEP80N75/CEB80N75 CEI80N75/CEF80N75 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP80N75 75V 13mΩ 80A 10V CEB80N75 75V 13mΩ 80A 10V CEI80N75 75V 13mΩ 80A 10V CEF80N75 75V 13mΩ 80A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP80N75/CEB80N75 CEI80N75/CEF80N75 CEP80N75 CEB80N75 CEI80N75 CEF80N75 O-220 O-263 O-262 O-220F CEP80N75 transistor vds rds 12 id 80a to220 ceb80n75 CEF80N75 CEI80N75 PDF

    KMB080N75PA

    Abstract: schottky diode 60V 80A 080N75P D 92 M - 02 DIODE isd 4020 080n7
    Text: SEMICONDUCTOR KMB080N75PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS


    Original     		KMB080N75PA KMB080N75PA schottky diode 60V 80A 080N75P D 92 M - 02 DIODE isd 4020 080n7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMB080N75PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS


    Original     		KMB080N75PA PDF

    p8444

    Abstract: transistor vds rds 12 id 80a to220
    Text: STB/P8444 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 40V 80A 4.8 @ VGS=10V Rugged and reliable. TO-220 and TO-263 Package.


    Original     		STB/P8444 O-220 O-263 O-220 O-263AB p8444 transistor vds rds 12 id 80a to220 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b RDS on Package Ordering Code 3A 3£2 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Rq s Values


    OCR Scan     		O-220 C67078-A1309-A3 B23SL BUZ80A 235bGS PDF

    STB80NF55L-08-1

    Abstract: No abstract text available
    Text: STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 55 V 55 V 55 V 0.008Ω 0.008Ω 0.008Ω 80 A


    Original     		STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 O-220/D2PAK/I2PAK O-220 STB80NF55L-08-1 PDF

    p80nf06

    Abstract: JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 P80NF
    Text: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS on ID STB80NF06 60V <0.008Ω 80A STP80NF06 60V <0.008Ω 80A 3 1 STW80NF06 60V • 100% avalanche tested ■ Low threshold drive


    Original     		STP80NF06 STB80NF06 STW80NF06 O-220/D2PAK/TO-247 STP80NF06 O-220 O-247 p80nf06 JESD97 STB80NF06 STB80NF06T4 STW80NF06 P80NF PDF

    JESD97

    Abstract: STD95N04 STP95N04
    Text: STP95N04 STD95N04 N-CHANNEL 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N04 STP95N04 40V 40V <6.5mΩ <6.5mΩ 80A 80A 110W 110W 3 • 1 STANDARD THRESHOLD DRIVE 3 1 ■ 100% AVALANCHE TESTED DPAK


    Original     		STP95N04 STD95N04 O-220 JESD97 STD95N04 STP95N04 PDF

    b80pf55

    Abstract: p80pf55 STP80PF55 P80PF B80PF MOSFET MARKING ST st 393 st mosfet STB80PF55 JESD97
    Text: STB80PF55 STP80PF55 P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP80PF55 55V <0.018Ω 80A STB80PF55 55V <0.018Ω 80A • Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STB80PF55 STP80PF55 O-220 O-220 b80pf55 p80pf55 STP80PF55 P80PF B80PF MOSFET MARKING ST st 393 st mosfet STB80PF55 JESD97 PDF

    STB80NF55L-08-1

    Abstract: No abstract text available
    Text: STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 55 V 55 V 55 V 0.008Ω 0.008Ω 0.008Ω 80 A


    Original     		STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 O-220/D2PAK/I2PAK STB80NF55L-08 O-220 STB80NF55L-08-1 PDF

    STB80NF55L-08-1

    Abstract: STP80NF55L-08 STB80NF55L-08
    Text: STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 55 V 55 V 55 V 0.008Ω 0.008Ω 0.008Ω 80 A


    Original     		STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 O-220/D2PAK/I2PAK STB80NF55L-08 O-220 STB80NF55L-08-1 STP80NF55L-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065Ω - 80A TO-220/I2PAK STripFET POWER MOSFET • TYPE VDSS RDS on ID STP80NF55-08 STB80NF55-08-1 55 V 55 V <0.008Ω <0.008Ω 80 A 80 A TYPICAL RDS(on) = 0.0065Ω 3 12 3 1 DESCRIPTION This Power Mosfet is the latest development of


    Original     		STP80NF55-08 STB80NF55-08-1 O-220/I2PAK O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF06 60V <0.010Ω 80A STP80NF06 60V <0.010Ω 80A 3 1 STW80NF06 60V • Exceptional dv/dt capability


    Original     		STP80NF06 STB80NF06 STW80NF06 O-220/D2PAK/TO-247 STP80NF06 O-220 O-247 PDF

    D-PAK

    Abstract: P270N04 STB270N04-1 STP270N04 B270N04 JESD97 STB270N04
    Text: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W


    Original     		STB270N04 STB270N04-1 STP270N04 O-220 STB270N04-1 O-220 D-PAK P270N04 STP270N04 B270N04 JESD97 STB270N04 PDF

    P80NF06

    Abstract: P80NF JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06
    Text: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF06 60V <0.010Ω 80A STP80NF06 60V <0.010Ω 80A 3 1 STW80NF06 60V • Exceptional dv/dt capability


    Original     		STP80NF06 STB80NF06 STW80NF06 O-220/D2PAK/TO-247 STP80NF06 O-220 O-247 P80NF06 P80NF JESD97 STB80NF06 STB80NF06T4 STW80NF06 PDF

    95n4f

    Abstract: STP95N4F3 95n4f3 STD95N4F3 JESD97 STU95N4F3
    Text: STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N4F3 40V <6.5mΩ 80A 110W STP95N4F3 40V <6.5mΩ 80A 110W STU95N4F3 40V <6.5mΩ 80A 110W • Standard threshold drive


    Original     		STD95N4F3 STP95N4F3 STU95N4F3 O-220 STP95N4F3 O-220 95n4f 95n4f3 STD95N4F3 JESD97 STU95N4F3 PDF

    SEM 2006

    Abstract: P1308ATG transistor sem 2006
    Text: P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P1308ATG O-220 Jun-09-2006 SEM 2006 P1308ATG transistor sem 2006 PDF

    p140nf55

    Abstract: STP140NF55 p140n B140NF55 JESD97 STB140NF55 STB140NF55-1 p140nf
    Text: STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID (1) STB140NF55 55V <0.008Ω 80A STB140NF55-1 55V <0.008Ω 80A STP140NF55 55V <0.008Ω 80A 3 1. Current limited by package


    Original     		STB140NF55 STB140NF55-1 STP140NF55 O-220 STB140NF55 p140nf55 STP140NF55 p140n B140NF55 JESD97 STB140NF55-1 p140nf PDF

    95n4f

    Abstract: STD95N4F3 95n4f3 JESD97 STP95N4F3 STU95N4F3
    Text: STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET Features Type VDSS RDS on ID Pw STD95N4F3 40V <6.5mΩ 80A 110W STP95N4F3 40V <6.5mΩ 80A 110W STU95N4F3 40V <6.5mΩ 80A 110W • Standard threshold drive


    Original     		STD95N4F3 STP95N4F3 STU95N4F3 O-220 STP95N4F3 O-220 95n4f STD95N4F3 95n4f3 JESD97 STU95N4F3 PDF

    p140nf55

    Abstract: STP140NF55 p140nf STB140NF55 STB140NF55T4
    Text: STB140NF55 STP140NF55 N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK STripFET II POWER MOSFET Table 1: General Features • Figure 1:Package TYPE VDSS RDS on ID STB140NF55 STP140NF55 55 V 55 V < 0.008 Ω < 0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0065 Ω


    Original     		STB140NF55 STP140NF55 O-220/D O-263 p140nf55 STP140NF55 p140nf STB140NF55 STB140NF55T4 PDF